2N2907AUB
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Microchip Technology 2N2907AUB

Manufacturer No:
2N2907AUB
Manufacturer:
Microchip Technology
Package:
Bulk
Description:
TRANS PNP 60V 0.6A UB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N2907AUB is a small-signal bipolar junction transistor (BJT) designed and manufactured by TT Electronics/Optek Technology, although it is often associated with Microchip Technology due to distribution and marketing channels. This PNP transistor is known for its compact form factor, wide operating temperature range, and high reliability, making it an ideal choice for various electronic designs.

Key Specifications

ParameterValue
ManufacturerTT Electronics / Optek Technology
Transistor TypePNP
Current - Collector (Ic) (Max)600 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Power - Max500 mW
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeSurface Mount
PackageSMD-3P

Key Features

  • Linear gain characteristics
  • Hermetic packages
  • ESCC and JANS qualified
  • European preferred part list EPPL
  • Low saturation voltage
  • Compatibility with various ICs
  • Enhanced thermal stability
  • Robust against noise
  • Efficient power management

Applications

The 2N2907AUB is versatile and suitable for a wide range of applications, including:

  • Audio amplifiers
  • Sensor circuits
  • Switching circuits
  • Voltage regulators
  • Motor control circuits
  • LED driver circuits
  • Power management circuits
  • Signal conditioning circuits
  • Voltage reference circuits
  • Temperature control circuits

Q & A

  1. What is the maximum collector current of the 2N2907AUB?
    The maximum collector current is 600 mA.
  2. What is the maximum collector-emitter breakdown voltage?
    The maximum collector-emitter breakdown voltage is 60 V.
  3. What is the typical DC current gain (hFE) of the 2N2907AUB?
    The typical DC current gain (hFE) is 100 at 150mA and 10V.
  4. What is the maximum power dissipation of the 2N2907AUB?
    The maximum power dissipation is 500 mW.
  5. What is the operating temperature range of the 2N2907AUB?
    The operating temperature range is -65°C to 200°C (TJ).
  6. What type of package does the 2N2907AUB use?
    The 2N2907AUB uses an SMD-3P package.
  7. Is the 2N2907AUB RoHS compliant?
    Yes, the 2N2907AUB is RoHS compliant.
  8. What are some common applications of the 2N2907AUB?
    Common applications include audio amplifiers, sensor circuits, switching circuits, voltage regulators, and more.
  9. Is the 2N2907AUB hermetically sealed?
    Yes, the 2N2907AUB is hermetically sealed.
  10. What certifications does the 2N2907AUB have?
    The 2N2907AUB is ESCC and JANS qualified.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max):50nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:500 mW
Frequency - Transition:- 
Operating Temperature:-65°C ~ 200°C (TJ)
Mounting Type:Surface Mount
Package / Case:3-SMD, No Lead
Supplier Device Package:UB
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Similar Products

Part Number 2N2907AUB 2N2906AUB 2N2907AUA
Manufacturer Microchip Technology Microchip Technology TT Electronics/Optek Technology
Product Status Active Active Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 600 mA 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA 1.6V @ 50mA, 500mA 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max) 50nA 50nA 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 40 @ 150mA, 10V 100 @ 1mA, 10V
Power - Max 500 mW 500 mW 400 mW
Frequency - Transition - - -
Operating Temperature -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ) -65°C ~ 200°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 3-SMD, No Lead 3-SMD, No Lead 4-CLCC
Supplier Device Package UB UB Ceramic SMD

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