Overview
The 2N2222AE4 is a silicon planar epitaxial NPN transistor produced by Microchip Technology. It is housed in a Jedec TO-18 metal case and is designed for high-speed switching applications. This transistor is renowned for its versatility and reliability, making it a popular choice in a wide range of electronic applications.
Key Specifications
| Parameter | Symbol | Rating | Unit |
|---|---|---|---|
| Collector-Base Voltage (IE=0) | VCBO | 75 | V |
| Collector-Emitter Voltage (IB=0) | VCEO | 40 | V |
| Emitter-Base Voltage (IC=0) | VEBO | 6 | V |
| Collector Current | IC | 800 | mA |
| Total Dissipation at TA≤25℃ | Ptot | 0.5 | W |
| Total Dissipation at TC≤25℃ | Ptot | 1.8 | W |
| Thermal Resistance Junction to Ambient | Rthja | 300 | °C/W |
| Thermal Resistance Junction to Case | Rthjc | 83.3 | °C/W |
| Operating Temperature | TJ | -65 to 175 | °C |
| Storage Temperature Range | TSTG | -65 to 200 | °C |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.3 to 1 | V |
Key Features
- High-Speed Switching: Designed for high-speed switching applications with collector currents up to 500mA.
- Low Saturation Voltage: Features low saturation voltage, making it ideal for amplification and signal processing.
- Wide Current Gain Range: Offers useful current gain over a wide range of collector currents.
- Low Leakage Currents: Exhibits low leakage currents, enhancing its performance in various applications.
- Rugged Construction: Housed in a Jedec TO-18 metal case, providing robustness and reliability.
Applications
- Amplification and Signal Processing: Suitable for amplification, switching, and signal processing in electronic circuits.
- Automotive and Industrial Control: Used in automotive and industrial control systems due to its high reliability and performance.
- Consumer Electronics: Commonly used in consumer electronics such as audio amplifiers, power supplies, and other electronic devices.
- Education and Prototyping: Often used in educational projects and prototyping due to its ease of use and versatility.
Q & A
- What is the maximum collector current of the 2N2222AE4 transistor?
The maximum collector current is 800 mA.
- What is the collector-emitter saturation voltage of the 2N2222AE4 transistor?
The collector-emitter saturation voltage ranges from 0.3 V to 1 V.
- What is the operating temperature range of the 2N2222AE4 transistor?
The operating temperature range is from -65°C to 175°C.
- What type of case does the 2N2222AE4 transistor use?
The transistor is housed in a Jedec TO-18 metal case.
- What are some common applications of the 2N2222AE4 transistor?
It is commonly used in amplification, switching, signal processing, automotive and industrial control, and consumer electronics.
- What is the thermal resistance junction to ambient of the 2N2222AE4 transistor?
The thermal resistance junction to ambient is 300 °C/W.
- Is the 2N2222AE4 transistor RoHS compliant?
Yes, the 2N2222AE4 transistor is RoHS compliant.
- What are some equivalent transistors to the 2N2222AE4?
Some equivalent transistors include BC549, BC636, BC639, BC547, 2N2369, and others.
- What is the maximum collector-emitter voltage of the 2N2222AE4 transistor?
The maximum collector-emitter voltage is 40 V.
- What is the base-emitter saturation voltage of the 2N2222AE4 transistor?
The base-emitter saturation voltage is typically around 0.9 V.
