Overview
The 2N2907AUB/TR is a PNP silicon bipolar junction transistor (BJT) produced by Microchip Technology. This transistor is designed for general-purpose switching and amplification applications. It is known for its high current gain and low saturation voltage, making it suitable for a variety of electronic circuits.
The transistor is packaged in a SMD-3P (Surface Mount Device, 3-pin) package, which is compact and suitable for modern PCB designs. It is also RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -60 | Vdc |
| Collector-Base Voltage | VCBO | -60 | Vdc |
| Emitter-Base Voltage | VEBO | -5.0 | Vdc |
| Collector Current - Continuous | IC | -600 | mAdc |
| Total Device Dissipation @ TA = 25°C | PD | 625 | mW |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -55 to +150 | °C |
| Thermal Resistance, Junction to Ambient | RθJA | 200 | °C/W |
| Thermal Resistance, Junction to Case | RθJC | 83.3 | °C/W |
| DC Current Gain (hFE) @ IC = -150 mA, VCE = -10 V | hFE | 100 | |
| Collector-Emitter Saturation Voltage @ IC = -150 mA, IB = -15 mA | VCE(sat) | -0.4 | Vdc |
| Base-Emitter Saturation Voltage @ IC = -150 mA, IB = -15 mA | VBE(sat) | -1.3 | Vdc |
| Current-Gain Bandwidth Product (fT) @ IC = -50 mA, VCE = -20 V | fT | 200 | MHz |
Key Features
- High Current Gain: The 2N2907AUB/TR has a high DC current gain (hFE) of up to 100, making it suitable for amplification and switching applications.
- Low Saturation Voltage: It features low collector-emitter and base-emitter saturation voltages, which reduce power losses and improve efficiency in switching circuits.
- High Frequency Capability: With a current-gain bandwidth product (fT) of 200 MHz, this transistor is capable of handling high-frequency signals.
- Compact Packaging: The SMD-3P package is compact and suitable for modern surface mount technology (SMT) PCB designs.
- RoHS Compliance: The transistor is RoHS compliant, ensuring it meets environmental standards.
Applications
- General-Purpose Switching: The 2N2907AUB/TR is commonly used in general-purpose switching applications due to its high current gain and low saturation voltage.
- Amplification Circuits: It is suitable for use in amplification circuits, including audio and signal amplifiers.
- Automotive Electronics: The transistor can be used in various automotive electronic systems due to its robust thermal and electrical characteristics.
- Industrial Control Systems: It is used in industrial control systems for switching and amplification purposes.
- Consumer Electronics: The 2N2907AUB/TR can be found in various consumer electronic devices such as power supplies, motor control circuits, and other electronic appliances.
Q & A
- What is the collector-emitter voltage rating of the 2N2907AUB/TR?
The collector-emitter voltage rating (VCEO) is -60 Vdc.
- What is the maximum collector current for the 2N2907AUB/TR?
The maximum collector current (IC) is -600 mA.
- What is the typical DC current gain (hFE) of the 2N2907AUB/TR?
The typical DC current gain (hFE) is 100 at IC = -150 mA and VCE = -10 V.
- What is the thermal resistance from junction to ambient for the 2N2907AUB/TR?
The thermal resistance from junction to ambient (RθJA) is 200 °C/W.
- Is the 2N2907AUB/TR RoHS compliant?
Yes, the 2N2907AUB/TR is RoHS compliant.
- What is the package type of the 2N2907AUB/TR?
The package type is SMD-3P (Surface Mount Device, 3-pin).
- What are the typical applications of the 2N2907AUB/TR?
The typical applications include general-purpose switching, amplification circuits, automotive electronics, industrial control systems, and consumer electronics.
- What is the current-gain bandwidth product (fT) of the 2N2907AUB/TR?
The current-gain bandwidth product (fT) is 200 MHz at IC = -50 mA and VCE = -20 V.
- What is the operating and storage junction temperature range for the 2N2907AUB/TR?
The operating and storage junction temperature range is -55 to +150 °C.
- What are the collector-emitter and base-emitter saturation voltages for the 2N2907AUB/TR?
The collector-emitter saturation voltage (VCE(sat)) is -0.4 Vdc, and the base-emitter saturation voltage (VBE(sat)) is -1.3 Vdc at IC = -150 mA and IB = -15 mA.
