MMBTA56LT1
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Infineon Technologies MMBTA56LT1

Manufacturer No:
MMBTA56LT1
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS PNP 80V 0.5A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBTA56LT1 is a PNP silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. This component is designed for general-purpose amplifier applications and is known for its high reliability and performance. The MMBTA56LT1 is packaged in a SOT-23-3 (TO-236-3) case, making it suitable for a wide range of electronic circuits where space is a constraint. It is also Pb-free and RoHS compliant, aligning with modern environmental standards.

Key Specifications

ParameterSymbolValueUnit
Collector-Emitter VoltageVCEO-80Vdc
Collector-Base VoltageVCBO-80Vdc
Emitter-Base VoltageVEBO-4.0Vdc
Collector Current - ContinuousIC-500mAdc
Peak Collector Current (t < 10 ms)IpC-1A
Base CurrentIB-100mA
Peak Base CurrentIBM-200mA
Total Power Dissipation (FR-5 Board, TA = 25°C)PD225mW
Thermal Resistance, Junction to AmbientRJA357°C/W
Junction TemperatureTJ-150 to 150°C
Storage TemperatureTstg-65 to 150°C

Key Features

  • High Collector-Emitter Voltage: Up to -80 V, making it suitable for high-voltage applications.
  • Low Collector-Emitter Saturation Voltage: Typically around 0.25 V, which reduces power losses in switching applications.
  • High DC Current Gain: With a minimum DC current gain of 100 at IC = 10 mA and VCE = 1 V.
  • Pb-free and RoHS Compliant: Ensuring environmental compliance and sustainability.
  • Compact SOT-23-3 Package: Ideal for space-constrained designs.
  • High Reliability: Qualified according to AEC Q101 standards, ensuring robust performance in automotive and industrial applications.

Applications

The MMBTA56LT1 is versatile and can be used in a variety of applications, including:

  • General-Purpose Amplification: Suitable for amplifier circuits in audio, signal processing, and other electronic systems.
  • Automotive Systems: Due to its AEC Q101 qualification, it is often used in automotive electronics for reliability and performance.
  • Industrial Control Systems: Used in control circuits, power management, and other industrial applications requiring high reliability.
  • Consumer Electronics: Found in various consumer electronic devices where compact, high-performance transistors are needed.

Q & A

  1. What is the collector-emitter voltage rating of the MMBTA56LT1?
    The collector-emitter voltage rating is -80 Vdc.
  2. What is the package type of the MMBTA56LT1?
    The MMBTA56LT1 is packaged in a SOT-23-3 (TO-236-3) case.
  3. Is the MMBTA56LT1 Pb-free and RoHS compliant?
    Yes, the MMBTA56LT1 is Pb-free and RoHS compliant.
  4. What is the maximum continuous collector current of the MMBTA56LT1?
    The maximum continuous collector current is -500 mA.
  5. What is the typical DC current gain of the MMBTA56LT1?
    The typical DC current gain is 100 at IC = 10 mA and VCE = 1 V.
  6. What are the storage temperature limits for the MMBTA56LT1?
    The storage temperature limits are -65°C to 150°C.
  7. Is the MMBTA56LT1 qualified according to automotive standards?
    Yes, it is qualified according to AEC Q101 standards.
  8. What is the thermal resistance, junction to ambient, of the MMBTA56LT1?
    The thermal resistance, junction to ambient, is 357 °C/W.
  9. What are some common applications of the MMBTA56LT1?
    Common applications include general-purpose amplification, automotive systems, industrial control systems, and consumer electronics.
  10. Where can I find the datasheet for the MMBTA56LT1?
    The datasheet can be found on the official ON Semiconductor website or through distributors like Ariat-Tech, Farnell, and JLCPCB.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V
Power - Max:225 mW
Frequency - Transition:50MHz
Operating Temperature:- 
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number MMBTA56LT1 MMBTA56LT1G MMBTA56WT1 MMBTA06LT1 MMBTA55LT1
Manufacturer Infineon Technologies onsemi onsemi Infineon Technologies onsemi
Product Status Active Active Obsolete Obsolete Obsolete
Transistor Type PNP PNP PNP NPN -
Current - Collector (Ic) (Max) 500 mA 500 mA 500 mA 500 mA -
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 80 V 80 V -
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA 250mV @ 10mA, 100mA 250mV @ 10mA, 100mA 250mV @ 10mA, 100mA -
Current - Collector Cutoff (Max) 100nA 100nA (ICBO) 100nA 100nA -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V 100 @ 100mA, 1V 100 @ 100mA, 1V 100 @ 100mA, 1V -
Power - Max 225 mW 225 mW 150 mW 225 mW -
Frequency - Transition 50MHz 50MHz 50MHz 100MHz -
Operating Temperature - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SC-70-3 (SOT323) SOT-23-3 (TO-236) -

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