FM25V10-GTR
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Infineon Technologies FM25V10-GTR

Manufacturer No:
FM25V10-GTR
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
IC FRAM 1MBIT SPI 40MHZ 8SOIC
Delivery:
Payment:
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Product Introduction

Overview

The FM25V10-GTR is a 1-Mbit nonvolatile memory from Infineon Technologies, utilizing advanced ferroelectric technology. This memory device is designed to provide reliable data retention for up to 151 years, making it an ideal solution for applications that require frequent or rapid writes, such as data collection and industrial controls. It addresses the limitations of serial flash and EEPROM by offering write operations at bus speed and substantial endurance.

Key Specifications

ParameterValue
Density1 Mbit (128K × 8)
InterfaceSPI (Mode 0 and Mode 3)
FrequencyUp to 40 MHz
Operating Voltage2.0 V to 3.6 V
Operating Temperature–40 °C to +85 °C
Endurance100 trillion (10^14) read/write cycles
Data Retention151 years
Power Consumption300 μA active, 90 μA standby, 5 μA sleep mode
Package8-pin SOIC, 8-pin DFN
RoHS ComplianceYes

Key Features

  • NoDelay™ writes at bus speed
  • High-endurance with 100 trillion read/write cycles
  • 151-year data retention
  • Sophisticated write protection scheme including hardware and software protection
  • Device ID and unique serial number
  • Low power consumption with active, standby, and sleep modes
  • Low-voltage operation and industrial temperature range
  • Restriction of hazardous substances (RoHS) compliant

Applications

The FM25V10-GTR is suitable for various applications requiring frequent or rapid writes, such as:

  • Data collection systems where the number of write cycles is critical
  • Industrial controls where long write times of serial flash or EEPROM can cause data loss
  • High-performance programmable logic controllers (PLC)
  • Life-enhancing patient monitoring devices
  • IoT sensor, automotive, and other mission-critical data logging applications

Q & A

  1. What is the density of the FM25V10-GTR? The FM25V10-GTR has a density of 1 Mbit, logically organized as 128K × 8 bits.
  2. What interface does the FM25V10-GTR use? The FM25V10-GTR uses the SPI interface, supporting both Mode 0 and Mode 3.
  3. What is the operating voltage range of the FM25V10-GTR? The operating voltage range is from 2.0 V to 3.6 V.
  4. What is the endurance of the FM25V10-GTR? The FM25V10-GTR has an endurance of 100 trillion (10^14) read/write cycles.
  5. How long does the FM25V10-GTR retain data? The FM25V10-GTR retains data for up to 151 years.
  6. What are the power consumption modes of the FM25V10-GTR? The device has active, standby, and sleep modes with power consumption of 300 μA, 90 μA, and 5 μA respectively.
  7. Is the FM25V10-GTR RoHS compliant? Yes, the FM25V10-GTR is RoHS compliant.
  8. What are the typical applications of the FM25V10-GTR? Typical applications include data collection systems, industrial controls, PLCs, patient monitoring devices, and IoT sensor applications.
  9. What is the unique feature of the write operation in the FM25V10-GTR? The FM25V10-GTR features NoDelay™ writes, which allow data to be written at bus speed without any delays.
  10. Does the FM25V10-GTR have any write protection schemes? Yes, the FM25V10-GTR includes a sophisticated write protection scheme with hardware and software protection options.

Product Attributes

Memory Type:Non-Volatile
Memory Format:FRAM
Technology:FRAM (Ferroelectric RAM)
Memory Size:1Mb (128K x 8)
Memory Interface:SPI
Clock Frequency:40 MHz
Write Cycle Time - Word, Page:- 
Access Time:- 
Voltage - Supply:2V ~ 3.6V
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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Similar Products

Part Number FM25V10-GTR FM25VN10-GTR FM25V20-GTR FM24V10-GTR
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Obsolete Active
Memory Type Non-Volatile Non-Volatile Non-Volatile Non-Volatile
Memory Format FRAM FRAM FRAM FRAM
Technology FRAM (Ferroelectric RAM) FRAM (Ferroelectric RAM) FRAM (Ferroelectric RAM) FRAM (Ferroelectric RAM)
Memory Size 1Mb (128K x 8) 1Mb (128K x 8) 2Mb (256K x 8) 1Mb (128K x 8)
Memory Interface SPI SPI SPI I²C
Clock Frequency 40 MHz 40 MHz 40 MHz 3.4 MHz
Write Cycle Time - Word, Page - - - -
Access Time - - - 130 ns
Voltage - Supply 2V ~ 3.6V 2V ~ 3.6V 2V ~ 3.6V 2V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) -40°C ~ 85°C (TA)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.209", 5.30mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC 8-SOIC

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