W971GG6NB-25 TR
  • Share:

Winbond Electronics W971GG6NB-25 TR

Manufacturer No:
W971GG6NB-25 TR
Manufacturer:
Winbond Electronics
Package:
Tape & Reel (TR)
Description:
IC DRAM 1GBIT PARALLEL 84WBGA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The W971GG6NB-25 TR, manufactured by Winbond Electronics, is a 1G bit DDR2 SDRAM memory module. This device is part of the W971GG6 series, known for its high-performance capabilities and reliability. The W971GG6NB-25 TR is organized as 8,388,608 words × 8 banks × 16 bits, making it suitable for a wide range of electronic devices that require fast data transfer rates and high storage capacity.

Key Specifications

Density 1 Gb
Package VFBGA 84 (8x12.5 mm² with a thickness of 1.0 mm)
Vcc 1.8V ± 0.1V
Frequency 667 / 800 / 1066 Mbps
Temperature Range 0°C ≤ TCASE ≤ 85°C (Commercial), -40°C ≤ TCASE ≤ 95°C (Industrial), -40°C ≤ TCASE ≤ 105°C (Industrial Plus)
CAS Latency 3, 4, 5, 6, and 7
Burst Length 4 and 8
Interface SSTL_18

Key Features

  • Double Data Rate architecture: two data transfers per clock cycle
  • Bi-directional, differential data strobes (DQS and /DQS) are transmitted/received with data
  • Edge-aligned with Read data and center-aligned with Write data
  • DLL aligns DQ and DQS transitions with clock
  • Differential clock inputs (CLK and /CLK)
  • Data masks (DM) for write data
  • Commands entered on each positive CLK edge, data and data mask are referenced to both edges of /DQS
  • Posted /CAS programmable additive latency supported to make command and data bus efficiency
  • Read Latency = Additive Latency plus CAS Latency (RL = AL + CL)
  • Off-Chip-Driver impedance adjustment (OCD) and On-Die-Termination (ODT) for better signal quality
  • Auto-precharge operation for read and write bursts
  • Auto Refresh and Self Refresh modes
  • Precharged Power Down and Active Power Down
  • Write Data Mask
  • Write Latency = Read Latency - 1 (WL = RL - 1)

Applications

The W971GG6NB-25 TR is designed for high-performance applications and is suitable for use in a wide range of electronic devices, including:

  • Smartphones
  • Gaming consoles
  • Industrial control systems
  • Embedded systems in harsh environments
  • Other high-intensity computing applications

Q & A

  1. What is the density of the W971GG6NB-25 TR?

    The density of the W971GG6NB-25 TR is 1 Gb.

  2. What are the operating temperature ranges for the W971GG6NB-25 TR?

    The operating temperature ranges are 0°C ≤ TCASE ≤ 85°C (Commercial), -40°C ≤ TCASE ≤ 95°C (Industrial), and -40°C ≤ TCASE ≤ 105°C (Industrial Plus).

  3. What are the supported frequencies for the W971GG6NB-25 TR?

    The supported frequencies are 667 / 800 / 1066 Mbps.

  4. What is the package type of the W971GG6NB-25 TR?

    The package type is VFBGA 84 (8x12.5 mm² with a thickness of 1.0 mm).

  5. What is the voltage supply for the W971GG6NB-25 TR?

    The voltage supply is 1.8V ± 0.1V.

  6. What are the CAS Latency values for the W971GG6NB-25 TR?

    The CAS Latency values are 3, 4, 5, 6, and 7.

  7. Does the W971GG6NB-25 TR support auto-refresh and self-refresh modes?
  8. What are the burst length options for the W971GG6NB-25 TR?

    The burst length options are 4 and 8.

  9. Is the W971GG6NB-25 TR compliant with RoHS standards?
  10. What interface does the W971GG6NB-25 TR use?

    The interface used is SSTL_18.

  11. What are some typical applications for the W971GG6NB-25 TR?

    Typical applications include smartphones, gaming consoles, industrial control systems, and other high-intensity computing applications.

Product Attributes

Memory Type:Volatile
Memory Format:DRAM
Technology:SDRAM - DDR2
Memory Size:1Gb (64M x 16)
Memory Interface:SSTL_18
Clock Frequency:400 MHz
Write Cycle Time - Word, Page:15ns
Access Time:400 ps
Voltage - Supply:1.7V ~ 1.9V
Operating Temperature:0°C ~ 85°C (TC)
Mounting Type:Surface Mount
Package / Case:84-TFBGA
Supplier Device Package:84-TFBGA (8x12.5)
0 Remaining View Similar

In Stock

$4.42
110

Please send RFQ , we will respond immediately.

Same Series
RD15S10HV50/AA
RD15S10HV50/AA
CONN D-SUB RCPT 15POS CRIMP
RD15S10HE30/AA
RD15S10HE30/AA
CONN D-SUB RCPT 15POS CRIMP
CBC13W3S10H00/AA
CBC13W3S10H00/AA
CONN D-SUB RCPT 13POS CRIMP
PCD50M98S0T2X
PCD50M98S0T2X
DSUB 50M STR CONTACT J/S TIN
DD15S20JV3S
DD15S20JV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WV5S/AA
DD15S20WV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HE2S/AA
CBC9W4S10HE2S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26M20HE30/AA
DD26M20HE30/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD44S32000X
DD44S32000X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S2S50T20
DD26S2S50T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W00/AA
DD26S20W00/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE30
DD26S20WE30
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number W971GG6NB-25 TR W971GG8NB-25 TR W971GG6SB-25 TR W971GG6KB-25 TR
Manufacturer Winbond Electronics Winbond Electronics Winbond Electronics Winbond Electronics
Product Status Active Active Obsolete Obsolete
Memory Type Volatile Volatile Volatile Volatile
Memory Format DRAM DRAM DRAM DRAM
Technology SDRAM - DDR2 SDRAM - DDR2 SDRAM - DDR2 SDRAM - DDR2
Memory Size 1Gb (64M x 16) 1Gb (128M x 8) 1Gb (64M x 16) 1Gb (64M x 16)
Memory Interface SSTL_18 SSTL_18 Parallel Parallel
Clock Frequency 400 MHz 400 MHz 200 MHz 200 MHz
Write Cycle Time - Word, Page 15ns 15ns 15ns 15ns
Access Time 400 ps 400 ps 400 ps 400 ps
Voltage - Supply 1.7V ~ 1.9V 1.7V ~ 1.9V 1.7V ~ 1.9V 1.7V ~ 1.9V
Operating Temperature 0°C ~ 85°C (TC) 0°C ~ 85°C (TC) 0°C ~ 85°C (TC) 0°C ~ 85°C (TC)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 84-TFBGA 60-VFBGA 84-TFBGA 84-TFBGA
Supplier Device Package 84-TFBGA (8x12.5) 60-VFBGA (8x9.5) 84-WBGA (8x12.5) 84-WBGA (8x12.5)

Related Product By Categories

CAT24C08C4ATR
CAT24C08C4ATR
onsemi
IC EEPROM 8KBIT I2C 4WLCSP
M45PE20-VMN6P
M45PE20-VMN6P
Alliance Memory, Inc.
IC FLASH 2MBIT SPI 75MHZ 8SO
CAT24M01HU5I-GT3
CAT24M01HU5I-GT3
onsemi
IC EEPROM 1MBIT I2C 1MHZ 8UDFN
MX25L12835FM2I-10G
MX25L12835FM2I-10G
Macronix
IC FLASH 128MBIT SPI 104MHZ 8SOP
AT24C02AN-10SC
AT24C02AN-10SC
Microchip Technology
IC EEPROM 2KBIT I2C 400KHZ 8SOIC
AT24C02AN-10SU-1.8-T
AT24C02AN-10SU-1.8-T
Microchip Technology
IC EEPROM 2KBIT I2C 400KHZ 8SOIC
M27C2001-12C1
M27C2001-12C1
STMicroelectronics
IC EPROM 2MBIT PARALLEL 32PLCC
CAT24C02WI-GT3
CAT24C02WI-GT3
onsemi
IC EEPROM 2KBIT I2C 400KHZ 8SOIC
M25P40-VMP6G
M25P40-VMP6G
Micron Technology Inc.
IC FLASH 4MBIT SPI 50MHZ 8VDFPN
M29W320DB70N6F TR
M29W320DB70N6F TR
Micron Technology Inc.
IC FLASH 32MBIT PARALLEL 48TSOP
M29W400DB70N6E
M29W400DB70N6E
Micron Technology Inc.
IC FLASH 4MBIT PARALLEL 48TSOP
M25P32-VMP6G
M25P32-VMP6G
Micron Technology Inc.
IC FLSH 32MBIT SPI 75MHZ 8VFQFPN

Related Product By Brand

W25Q128JVSIM TR
W25Q128JVSIM TR
Winbond Electronics
IC FLASH 128MBIT SPI/QUAD 8SOIC
W25Q128JVPIQ TR
W25Q128JVPIQ TR
Winbond Electronics
IC FLASH 128MBIT SPI/QUAD 8WSON
W25Q128JVEIQ
W25Q128JVEIQ
Winbond Electronics
IC FLASH 128MBIT SPI/QUAD 8WSON
W25Q512JVEIQ
W25Q512JVEIQ
Winbond Electronics
IC FLASH 512MBIT SPI/QUAD 8WSON
W25Q128JVSIQ TR
W25Q128JVSIQ TR
Winbond Electronics
IC FLASH 128MBIT SPI/QUAD 8SOIC
W25Q64JVZPIQ
W25Q64JVZPIQ
Winbond Electronics
SPIFLASH, 64M-BIT, 4KB UNIFORM S
W25X40CLSNIG TR
W25X40CLSNIG TR
Winbond Electronics
IC FLASH 4MBIT SPI 104MHZ 8SOIC
W25Q128JVEIQ TR
W25Q128JVEIQ TR
Winbond Electronics
IC FLASH 128MBIT SPI/QUAD 8WSON
W25Q128JVFIQ TR
W25Q128JVFIQ TR
Winbond Electronics
IC FLASH 128MBIT SPI/QUAD 16SOIC
W25Q512JVFIQ TR
W25Q512JVFIQ TR
Winbond Electronics
IC FLASH 512MBIT SPI/QUAD 16SOIC
W25Q256FVEIG
W25Q256FVEIG
Winbond Electronics
IC FLASH 256MBIT SPI/QUAD 8WSON
W25Q128FVAIQ TR
W25Q128FVAIQ TR
Winbond Electronics
IC FLASH 128MBIT SPI/QUAD 8DIP