FM25CL64B-GTR
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Infineon Technologies FM25CL64B-GTR

Manufacturer No:
FM25CL64B-GTR
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
IC FRAM 64KBIT SPI 20MHZ 8SOIC
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The FM25CL64B-GTR is a 64-Kbit nonvolatile memory module produced by Infineon Technologies, utilizing advanced ferroelectric RAM (F-RAM) technology. This module is designed to provide high-speed and reliable data storage, making it an ideal replacement for serial EEPROM or flash memory. It features rapid write operations at bus speed, eliminating the need for write delays, and offers substantial write endurance of 100 trillion read/write cycles. The FM25CL64B-GTR is particularly suited for applications requiring frequent or rapid writes, such as data collection and demanding industrial controls.

Key Specifications

Attribute Specification
FRAM Type Non Volatile
Memory Density 64 Kb (8 K x 8)
Interface Type SPI
Supply Voltage-Nom 2.7 V to 3.65 V
Temperature Range -40°C to +85°C
Supply Current 200 µA (active at 1 MHz), 3 µA (typ standby)
Power Dissipation 1 W
Storage Temperature Range -65°C to +125°C
No of Terminals 8
Moisture Sensitivity Level 3
Package Style SOIC-8
Mounting Method Surface Mount
Maximum Clock Frequency 20 MHz
Maximum Access Time 20 ns

Key Features

  • High-endurance with 100 trillion (10^14) read/write cycles.
  • 151-year data retention.
  • NoDelay™ writes, allowing write operations at bus speed without delays.
  • Advanced high-reliability ferroelectric process.
  • Very fast serial peripheral interface (SPI) with up to 20 MHz frequency.
  • Supports SPI mode 0 (0, 0) and mode 3 (1, 1).
  • Low power consumption with 200 µA active current at 1 MHz and 3 µA (typ) standby current.
  • Low-voltage operation: VDD = 2.7 V to 3.65 V.
  • Industrial temperature range: –40°C to +85°C.
  • RoHS compliant.

Applications

  • Data collection applications where frequent writes are critical.
  • Demanding industrial controls where long write times of serial flash or EEPROM can cause data loss.
  • Drop-in replacement for serial EEPROM or flash memory in various systems.

Q & A

  1. What is the memory density of the FM25CL64B-GTR? The memory density is 64 Kb, organized as 8 K x 8.
  2. What type of interface does the FM25CL64B-GTR use? It uses a Serial Peripheral Interface (SPI).
  3. What is the operating temperature range of the FM25CL64B-GTR? The operating temperature range is -40°C to +85°C.
  4. How many write cycles can the FM25CL64B-GTR endure? It can endure 100 trillion (10^14) read/write cycles.
  5. What is the maximum clock frequency of the FM25CL64B-GTR? The maximum clock frequency is 20 MHz.
  6. Is the FM25CL64B-GTR RoHS compliant? Yes, it is RoHS compliant.
  7. What is the typical standby current of the FM25CL64B-GTR? The typical standby current is 3 µA.
  8. Can the FM25CL64B-GTR be used as a replacement for serial EEPROM or flash? Yes, it can be used as a drop-in replacement for serial EEPROM or flash.
  9. What is the data retention period of the FM25CL64B-GTR? The data retention period is 151 years.
  10. What package styles are available for the FM25CL64B-GTR? It is available in an 8-pin SOIC package.

Product Attributes

Memory Type:Non-Volatile
Memory Format:FRAM
Technology:FRAM (Ferroelectric RAM)
Memory Size:64Kb (8K x 8)
Memory Interface:SPI
Clock Frequency:20 MHz
Write Cycle Time - Word, Page:- 
Access Time:- 
Voltage - Supply:2.7V ~ 3.65V
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SOIC
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Same Series
FM25CL64B-GTR
FM25CL64B-GTR
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FM25CL64B-DG
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FM25CL64B-DGTR
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Similar Products

Part Number FM25CL64B-GTR FM24CL64B-GTR FM25CL64B-DGTR FM25CL64B-G2TR FM25CL64B-GATR
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Cypress Semiconductor Corp Infineon Technologies
Product Status Active Active Active Active Obsolete
Memory Type Non-Volatile Non-Volatile Non-Volatile - Non-Volatile
Memory Format FRAM FRAM FRAM - FRAM
Technology FRAM (Ferroelectric RAM) FRAM (Ferroelectric RAM) FRAM (Ferroelectric RAM) - FRAM (Ferroelectric RAM)
Memory Size 64Kb (8K x 8) 64Kb (8K x 8) 64Kb (8K x 8) - 64Kb (8K x 8)
Memory Interface SPI I²C SPI - SPI
Clock Frequency 20 MHz 1 MHz 20 MHz - 16 MHz
Write Cycle Time - Word, Page - - - - -
Access Time - 550 ns - - -
Voltage - Supply 2.7V ~ 3.65V 2.7V ~ 3.65V 2.7V ~ 3.6V - 3V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) -40°C ~ 85°C (TA) - -40°C ~ 125°C (TA)
Mounting Type Surface Mount Surface Mount Surface Mount - Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-WDFN Exposed Pad - 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC 8-SOIC 8-DFN (4x4.5) - 8-SOIC

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