BCP 68-25 E6327
  • Share:

Infineon Technologies BCP 68-25 E6327

Manufacturer No:
BCP 68-25 E6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 20V 1A SOT223-4
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BCP 68-25 E6327 is a high-performance NPN silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for general audio frequency (AF) applications and is known for its high collector current, high current gain, and low collector-emitter saturation voltage. The device is packaged in a SOT-223 case, making it suitable for surface mount applications. It is also RoHS compliant and qualified according to AEC Q101 standards.

Key Specifications

ParameterSymbolValueUnit
Collector-emitter voltageVCEO20V
Collector-base voltageVCBO25V
Emitter-base voltageVEBO5V
Collector currentIC1A
Peak collector current (tp ≤ 10 ms)ICM2A
Base currentIB100mA
Peak base currentIBM200mA
Total power dissipation (TS ≤ 114 °C)Ptot3W
Junction temperatureTj150°C
Storage temperatureTstg-65 to 150°C
DC current gain (hFE) @ IC = 500 mA, VCE = 1 VhFE160
Collector-emitter saturation voltage @ IC = 1 A, IB = 100 mAVCEsat0.5V
Transition frequency @ IC = 100 mA, VCE = 5 VfT100MHz

Key Features

  • High collector current of up to 1 A
  • High current gain (hFE) of up to 160 at IC = 500 mA, VCE = 1 V
  • Low collector-emitter saturation voltage of 0.5 V at IC = 1 A, IB = 100 mA
  • Complementary type: BCP69 (PNP)
  • Pb-free (RoHS compliant) package
  • Qualified according to AEC Q101 standards
  • Surface mount package (SOT-223)

Applications

The BCP 68-25 E6327 is suitable for a variety of general audio frequency (AF) applications, including amplifiers and other high-current gain requirements. Its high collector current and low saturation voltage make it an ideal choice for applications needing efficient and reliable transistor performance.

Q & A

  1. What is the maximum collector-emitter voltage of the BCP 68-25 E6327?
    The maximum collector-emitter voltage (VCEO) is 20 V.
  2. What is the maximum collector current of the BCP 68-25 E6327?
    The maximum collector current (IC) is 1 A.
  3. What is the transition frequency of the BCP 68-25 E6327?
    The transition frequency (fT) is 100 MHz at IC = 100 mA, VCE = 5 V.
  4. Is the BCP 68-25 E6327 RoHS compliant?
    Yes, the BCP 68-25 E6327 is RoHS compliant.
  5. What is the package type of the BCP 68-25 E6327?
    The package type is SOT-223.
  6. What are the operating temperature ranges for the BCP 68-25 E6327?
    The junction temperature (Tj) can range from -65°C to 150°C.
  7. What is the DC current gain (hFE) of the BCP 68-25 E6327?
    The DC current gain (hFE) is 160 at IC = 500 mA, VCE = 1 V.
  8. What is the collector-emitter saturation voltage of the BCP 68-25 E6327?
    The collector-emitter saturation voltage (VCEsat) is 0.5 V at IC = 1 A, IB = 100 mA.
  9. Is the BCP 68-25 E6327 qualified according to any specific standards?
    Yes, it is qualified according to AEC Q101 standards.
  10. What is the complementary type of the BCP 68-25 E6327?
    The complementary type is BCP69 (PNP).

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):20 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 100mA, 1A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 500mA, 1V
Power - Max:3 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:PG-SOT223-4
0 Remaining View Similar

In Stock

-
366

Please send RFQ , we will respond immediately.

Same Series
BCP 68-25 E6327
BCP 68-25 E6327
TRANS NPN 20V 1A SOT223-4

Similar Products

Part Number BCP 68-25 E6327 BCP 68-25 H6327
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Discontinued at Digi-Key
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 20 V 20 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A 500mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 500mA, 1V 160 @ 500mA, 1V
Power - Max 3 W 3 W
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4 PG-SOT223-4

Related Product By Categories

MJD42CT4G
MJD42CT4G
onsemi
TRANS PNP 100V 6A DPAK
PDTA114EU/ZL115
PDTA114EU/ZL115
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
2PB709ARW,115
2PB709ARW,115
NXP USA Inc.
NOW NEXPERIA 2PB709ARW - SMALL S
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
NJD35N04T4G
NJD35N04T4G
onsemi
TRANS NPN DARL 350V 4A DPAK
BCP56TA
BCP56TA
Diodes Incorporated
TRANS NPN 80V 1A SOT223-3
BF840,215
BF840,215
Nexperia USA Inc.
TRANS NPN 40V 0.025A TO236AB
TIP122TU
TIP122TU
Fairchild Semiconductor
TRANS NPN DARL 100V 5A TO220-3
BCX5616QTC
BCX5616QTC
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT89 T&
2STF1340
2STF1340
STMicroelectronics
TRANS NPN 40V 3A SOT89-3
PBSS5350Z/ZLF
PBSS5350Z/ZLF
Nexperia USA Inc.
TRANS PNP 50V 3A SOT223
BUK9Y11-30B/C1,115
BUK9Y11-30B/C1,115
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

BAS70-05B5003
BAS70-05B5003
Infineon Technologies
SCHOTTKY DIODE
BAV99SH6433XTMA1
BAV99SH6433XTMA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT363
BAS40-02LE6327
BAS40-02LE6327
Infineon Technologies
BAS40 - HIGH SPEED SWITCHING, CL
BC847CWH6778
BC847CWH6778
Infineon Technologies
TRANS NPN 45V 0.1A SOT323-3
BCV47E6327HTSA1
BCV47E6327HTSA1
Infineon Technologies
TRANS NPN DARL 60V 0.5A SOT23
BC848BW
BC848BW
Infineon Technologies
TRANS NPN 30V 0.1A SOT323
BCX5616E6433HTMA1
BCX5616E6433HTMA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
IRFR120NTRPBF
IRFR120NTRPBF
Infineon Technologies
MOSFET N-CH 100V 9.4A DPAK
IRLML9301TRPBF
IRLML9301TRPBF
Infineon Technologies
MOSFET P-CH 30V 3.6A SOT23
IPD30N10S3L34ATMA1
IPD30N10S3L34ATMA1
Infineon Technologies
MOSFET N-CH 100V 30A TO252-3
IPW65R041CFD7XKSA1
IPW65R041CFD7XKSA1
Infineon Technologies
650V FET COOLMOS TO247
BSS123E6327
BSS123E6327
Infineon Technologies
MOSFET N-CH 100V 170MA SOT23-3