BCP 68-25 E6327
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Infineon Technologies BCP 68-25 E6327

Manufacturer No:
BCP 68-25 E6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS NPN 20V 1A SOT223-4
Delivery:
Payment:
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Product Introduction

Overview

The BCP 68-25 E6327 is a high-performance NPN silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for general audio frequency (AF) applications and is known for its high collector current, high current gain, and low collector-emitter saturation voltage. The device is packaged in a SOT-223 case, making it suitable for surface mount applications. It is also RoHS compliant and qualified according to AEC Q101 standards.

Key Specifications

ParameterSymbolValueUnit
Collector-emitter voltageVCEO20V
Collector-base voltageVCBO25V
Emitter-base voltageVEBO5V
Collector currentIC1A
Peak collector current (tp ≤ 10 ms)ICM2A
Base currentIB100mA
Peak base currentIBM200mA
Total power dissipation (TS ≤ 114 °C)Ptot3W
Junction temperatureTj150°C
Storage temperatureTstg-65 to 150°C
DC current gain (hFE) @ IC = 500 mA, VCE = 1 VhFE160
Collector-emitter saturation voltage @ IC = 1 A, IB = 100 mAVCEsat0.5V
Transition frequency @ IC = 100 mA, VCE = 5 VfT100MHz

Key Features

  • High collector current of up to 1 A
  • High current gain (hFE) of up to 160 at IC = 500 mA, VCE = 1 V
  • Low collector-emitter saturation voltage of 0.5 V at IC = 1 A, IB = 100 mA
  • Complementary type: BCP69 (PNP)
  • Pb-free (RoHS compliant) package
  • Qualified according to AEC Q101 standards
  • Surface mount package (SOT-223)

Applications

The BCP 68-25 E6327 is suitable for a variety of general audio frequency (AF) applications, including amplifiers and other high-current gain requirements. Its high collector current and low saturation voltage make it an ideal choice for applications needing efficient and reliable transistor performance.

Q & A

  1. What is the maximum collector-emitter voltage of the BCP 68-25 E6327?
    The maximum collector-emitter voltage (VCEO) is 20 V.
  2. What is the maximum collector current of the BCP 68-25 E6327?
    The maximum collector current (IC) is 1 A.
  3. What is the transition frequency of the BCP 68-25 E6327?
    The transition frequency (fT) is 100 MHz at IC = 100 mA, VCE = 5 V.
  4. Is the BCP 68-25 E6327 RoHS compliant?
    Yes, the BCP 68-25 E6327 is RoHS compliant.
  5. What is the package type of the BCP 68-25 E6327?
    The package type is SOT-223.
  6. What are the operating temperature ranges for the BCP 68-25 E6327?
    The junction temperature (Tj) can range from -65°C to 150°C.
  7. What is the DC current gain (hFE) of the BCP 68-25 E6327?
    The DC current gain (hFE) is 160 at IC = 500 mA, VCE = 1 V.
  8. What is the collector-emitter saturation voltage of the BCP 68-25 E6327?
    The collector-emitter saturation voltage (VCEsat) is 0.5 V at IC = 1 A, IB = 100 mA.
  9. Is the BCP 68-25 E6327 qualified according to any specific standards?
    Yes, it is qualified according to AEC Q101 standards.
  10. What is the complementary type of the BCP 68-25 E6327?
    The complementary type is BCP69 (PNP).

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):20 V
Vce Saturation (Max) @ Ib, Ic:500mV @ 100mA, 1A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 500mA, 1V
Power - Max:3 W
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:PG-SOT223-4
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Same Series
BCP 68-25 E6327
BCP 68-25 E6327
TRANS NPN 20V 1A SOT223-4

Similar Products

Part Number BCP 68-25 E6327 BCP 68-25 H6327
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Discontinued at Digi-Key
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 20 V 20 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 100mA, 1A 500mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 500mA, 1V 160 @ 500mA, 1V
Power - Max 3 W 3 W
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package PG-SOT223-4 PG-SOT223-4

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