Overview
The BC860CE6359HTMA1 is a PNP silicon AF (Audio Frequency) transistor manufactured by Infineon Technologies. This transistor is designed for use in AF input stages and driver applications, offering high current gain and low collector-emitter saturation voltage. It is packaged in a surface-mount PG-SOT23 format, making it suitable for a variety of modern electronic designs.
Key Specifications
| Parameter | Value |
|---|---|
| Part Number | BC860CE6359HTMA1 |
| Manufacturer | Infineon Technologies |
| Transistor Type | PNP Silicon AF Transistor |
| Collector-Base Voltage (Vcbo) | 45 V |
| Collector-Emitter Voltage (Vceo) | 45 V |
| Emitter-Base Voltage (Vebo) | 5 V |
| Collector Current (Ic) | 100 mA |
| Power Dissipation (Pd) | 330 mW |
| Frequency (fT) | 250 MHz |
| Package | PG-SOT23 |
Key Features
- High current gain, making it suitable for amplifier and driver applications.
- Low collector-emitter saturation voltage, reducing power losses.
- High frequency capability up to 250 MHz.
- Surface-mount PG-SOT23 package for compact and efficient design.
- Low power dissipation of 330 mW, suitable for energy-efficient designs.
Applications
- Audio Frequency (AF) input stages.
- Driver applications in various electronic circuits.
- Amplifier circuits requiring high current gain and low noise.
- General-purpose switching and amplification in electronic devices.
Q & A
- Q: What is the collector-emitter voltage (Vceo) of the BC860CE6359HTMA1 transistor?
A: The collector-emitter voltage (Vceo) is 45 V.
- Q: What is the maximum collector current (Ic) of the BC860CE6359HTMA1?
A: The maximum collector current (Ic) is 100 mA.
- Q: What is the frequency (fT) of the BC860CE6359HTMA1 transistor?
A: The frequency (fT) is 250 MHz.
- Q: What is the package type of the BC860CE6359HTMA1?
A: The package type is PG-SOT23.
- Q: What are the typical applications of the BC860CE6359HTMA1 transistor?
A: Typical applications include AF input stages, driver applications, and general-purpose amplification and switching.
- Q: What is the power dissipation (Pd) of the BC860CE6359HTMA1?
A: The power dissipation (Pd) is 330 mW.
- Q: Is the BC860CE6359HTMA1 suitable for high-frequency applications?
A: Yes, it is suitable for high-frequency applications up to 250 MHz.
- Q: What is the emitter-base voltage (Vebo) of the BC860CE6359HTMA1?
A: The emitter-base voltage (Vebo) is 5 V.
- Q: Can the BC860CE6359HTMA1 be used in surface-mount designs?
A: Yes, it is designed for surface-mount applications with a PG-SOT23 package.
- Q: What are the benefits of using the BC860CE6359HTMA1 in amplifier circuits?
A: It offers high current gain and low collector-emitter saturation voltage, which are beneficial for efficient and low-noise amplifier circuits.
