Overview
The BC817UE6327HTSA1 is a dual NPN silicon transistor array produced by Infineon Technologies. This component is designed for use in audio frequency (AF) stages and driver applications. It features two galvanically isolated transistors within a single package, ensuring good matching between the transistors. The BC817UE6327HTSA1 is lead-free and compliant with RoHS standards, making it environmentally friendly. Additionally, it is qualified according to AEC Q101, indicating its reliability and suitability for automotive and other demanding applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-emitter voltage | VCEO | 45 | V |
| Collector-base voltage | VCBO | 50 | V |
| Emitter-base voltage | VEBO | 5 | V |
| Collector current | IC | 500 | mA |
| Peak collector current (tp ≤ 10 ms) | ICM | 1000 | mA |
| Base current | IB | 100 | mA |
| Peak base current | IBM | 200 | mA |
| Total power dissipation (TS ≤ 115 °C) | Ptot | 330 | mW |
| Junction temperature | Tj | 150 | °C |
| Storage temperature | Tstg | -65 to 150 | °C |
| DC current gain (IC = 100 mA, VCE = 1 V) | hFE | 160 to 400 | |
| Collector-emitter saturation voltage (IC = 500 mA, IB = 50 mA) | VCEsat | ≤ 0.7 | V |
| Base-emitter saturation voltage (IC = 500 mA, IB = 50 mA) | VBEsat | ≤ 1.2 | V |
Key Features
- High current gain
- Low collector-emitter saturation voltage
- Two galvanically isolated NPN transistors in one package with good matching
- Pb-free (RoHS compliant) package
- Qualified according to AEC Q101
Applications
- Audio frequency (AF) input stages
- Driver applications
Q & A
- What is the BC817UE6327HTSA1 used for?
The BC817UE6327HTSA1 is used for audio frequency (AF) stages and driver applications.
- What are the key features of the BC817UE6327HTSA1?
The key features include high current gain, low collector-emitter saturation voltage, two galvanically isolated NPN transistors in one package, Pb-free (RoHS compliant) package, and qualification according to AEC Q101.
- What is the maximum collector-emitter voltage of the BC817UE6327HTSA1?
The maximum collector-emitter voltage is 45 V.
- What is the maximum collector current of the BC817UE6327HTSA1?
The maximum collector current is 500 mA.
- What is the total power dissipation of the BC817UE6327HTSA1 at TS ≤ 115 °C?
The total power dissipation is 330 mW.
- What is the junction temperature range of the BC817UE6327HTSA1?
The junction temperature range is up to 150 °C.
- Is the BC817UE6327HTSA1 RoHS compliant?
- What is the DC current gain range of the BC817UE6327HTSA1?
The DC current gain range is from 160 to 400 at IC = 100 mA and VCE = 1 V.
- What are the collector-emitter and base-emitter saturation voltages of the BC817UE6327HTSA1?
The collector-emitter saturation voltage is ≤ 0.7 V, and the base-emitter saturation voltage is ≤ 1.2 V, both at IC = 500 mA and IB = 50 mA.
- Is the BC817UE6327HTSA1 suitable for automotive applications?
