BC807-40E6359
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Infineon Technologies BC807-40E6359

Manufacturer No:
BC807-40E6359
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS PNP 45V 0.5A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-40E6359 is a PNP silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for general-purpose amplifier applications and is known for its high collector current, high current gain, and low collector-emitter saturation voltage. It is part of the BC807 series, which includes various versions with different current gain groups. The BC807-40E6359 is particularly suited for applications requiring reliable and efficient amplification.

Key Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 45 V
Collector-Base Voltage VCBO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current (Continuous) IC 500 mA
Peak Collector Current ICM 1000 mA
Base Current IB 100 mA
Peak Base Current IBM 200 mA
Total Power Dissipation (TS ≤ 79 °C) Ptot 330 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg -65 to 150 °C
Transition Frequency fT 200 MHz
DC Current Gain (IC = 500 mA, VCE = 1 V) hFE 250 - 400
Collector-Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) VCEsat 0.7 V

Key Features

  • High collector current of up to 500 mA and peak collector current of 1000 mA.
  • High current gain (hFE) ranging from 250 to 400.
  • Low collector-emitter saturation voltage of 0.7 V.
  • Pb-free (RoHS compliant) package.
  • AEC Q101 qualified, making it suitable for automotive and other demanding applications.
  • High transition frequency of 200 MHz, suitable for high-frequency applications.
  • Surface mount package (PG-SOT23) for easy integration into modern designs.

Applications

  • General-purpose amplifier applications.
  • Automotive electronics due to its AEC Q101 qualification.
  • Audio amplifiers and other audio equipment.
  • Switching and driver circuits.
  • Industrial control systems.

Q & A

  1. What is the collector-emitter voltage rating of the BC807-40E6359?

    The collector-emitter voltage rating is 45 V.

  2. What is the maximum collector current for the BC807-40E6359?

    The maximum continuous collector current is 500 mA, with a peak collector current of 1000 mA.

  3. Is the BC807-40E6359 RoHS compliant?
  4. What is the transition frequency of the BC807-40E6359?

    The transition frequency is 200 MHz.

  5. What package type does the BC807-40E6359 use?

    The BC807-40E6359 uses a surface mount PG-SOT23 package.

  6. Is the BC807-40E6359 suitable for automotive applications?
  7. What is the junction temperature range for the BC807-40E6359?

    The junction temperature range is -65 to 150 °C.

  8. What is the typical DC current gain (hFE) for the BC807-40E6359?

    The typical DC current gain (hFE) ranges from 250 to 400.

  9. What is the collector-emitter saturation voltage for the BC807-40E6359?

    The collector-emitter saturation voltage is 0.7 V.

  10. Is the BC807-40E6359 available in Pb-containing packages?

    Pb-containing packages may be available upon special request, but the standard package is Pb-free.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:330 mW
Frequency - Transition:200MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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