BAV70E6433
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Infineon Technologies BAV70E6433

Manufacturer No:
BAV70E6433
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
HIGH SPEED SWITCHING DIODE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAV70E6433, produced by Infineon Technologies, is a high-speed switching diode designed for various high-frequency applications. This component is part of the BAV70 series, which is known for its high performance and reliability in switching circuits. The diode is configured in a common cathode arrangement, making it suitable for a wide range of electronic systems that require efficient and fast switching capabilities.

Key Specifications

Parameter Symbol Value Unit
Diode Configuration - 1 Pair Common Cathode -
Diode Type - Standard -
Voltage - DC Reverse (Vr) (Max) VR 80 V V
Current - Average Rectified (Io) (per Diode) IF 200 mA mA
Voltage - Forward (Vf) (Max) @ If Vf 1.25 V @ 150 mA V
Reverse Recovery Time (trr) trr 4 ns ns
Current - Reverse Leakage @ Vr IR 100 nA @ 80 V nA
Mounting Type - Surface Mount -
Package / Case - TO-236-3, SC-59, SOT-23-3 -
Junction Temperature Tj 150 °C °C
Storage Temperature Tstg -65 to 150 °C °C

Key Features

  • High-speed switching capabilities, making it ideal for high-frequency applications.
  • Common cathode configuration, which simplifies circuit design and reduces component count.
  • Pb-free (RoHS compliant) package, ensuring environmental compliance and sustainability.
  • Qualified according to AEC Q101, indicating reliability and suitability for automotive and other demanding applications.
  • Low forward voltage drop (Vf) of 1.25 V at 150 mA, reducing power losses in the circuit.
  • Fast reverse recovery time (trr) of 4 ns, enabling quick switching and minimizing switching losses.

Applications

  • High-speed switching circuits in automotive, industrial, and consumer electronics.
  • Rectifier circuits requiring fast recovery times.
  • Power supply circuits where high efficiency and low power losses are critical.
  • Communication and signal processing systems that demand high-speed diodes.
  • General-purpose switching applications where reliability and performance are essential.

Q & A

  1. What is the maximum DC reverse voltage for the BAV70E6433?

    The maximum DC reverse voltage (Vr) for the BAV70E6433 is 80 V.

  2. What is the average rectified current per diode for the BAV70E6433?

    The average rectified current (Io) per diode for the BAV70E6433 is 200 mA.

  3. What is the forward voltage drop at 150 mA for the BAV70E6433?

    The forward voltage drop (Vf) at 150 mA for the BAV70E6433 is 1.25 V.

  4. What is the reverse recovery time for the BAV70E6433?

    The reverse recovery time (trr) for the BAV70E6433 is 4 ns.

  5. Is the BAV70E6433 RoHS compliant?
  6. What are the typical applications for the BAV70E6433?

    The BAV70E6433 is typically used in high-speed switching circuits, rectifier circuits, power supply circuits, and general-purpose switching applications).

  7. What is the junction temperature range for the BAV70E6433?

    The junction temperature range for the BAV70E6433 is up to 150 °C).

  8. What is the storage temperature range for the BAV70E6433?

    The storage temperature range for the BAV70E6433 is -65 to 150 °C).

  9. What package types are available for the BAV70E6433?

    The BAV70E6433 is available in TO-236-3, SC-59, and SOT-23-3 packages).

  10. Is the BAV70E6433 qualified according to any specific standards?

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):80 V
Current - Average Rectified (Io) (per Diode):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:150 nA @ 70 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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