BAV70E6327HTSA1
  • Share:

Infineon Technologies BAV70E6327HTSA1

Manufacturer No:
BAV70E6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
DIODE ARRAY GP 80V 200MA SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAV70E6327HTSA1 is a high-speed switching diode produced by Infineon Technologies. This component is designed for high-speed switching applications and features a common cathode configuration. It is packaged in a SOT-23-3 package, which is Pb-free and RoHS compliant, ensuring environmental sustainability. The diode is also qualified according to AEC Q101 standards, making it suitable for automotive and other demanding applications.

Key Specifications

Parameter Symbol Value Unit
Manufacturer - Infineon Technologies -
Part Number - BAV70E6327HTSA1 -
Package - SOT-23-3 -
Diode Reverse Voltage VR 80 V V
Peak Reverse Voltage VRM 85 V V
Forward Current IF 200 mA mA
Non-repetitive Peak Surge Forward Current IFSM 4.5 A (t = 1 µs) A
Total Power Dissipation Ptot 250 mW mW
Junction Temperature Tj 150 °C °C
Storage Temperature Tstg -65 to 150 °C °C
Reverse Recovery Time trr 4 ns ns

Key Features

  • High-speed switching capabilities, making it ideal for applications requiring fast switching times.
  • Common cathode configuration, which is beneficial for certain circuit designs.
  • Pb-free and RoHS compliant, ensuring environmental sustainability.
  • Qualified according to AEC Q101 standards, suitable for automotive and other demanding applications.
  • Ultrafast switching with a reverse recovery time of 4 ns.
  • Low forward voltage drop, typically around 715 mV to 1250 mV depending on the forward current.

Applications

  • High-speed switching circuits in various electronic devices.
  • Automotive electronics due to its AEC Q101 qualification.
  • General-purpose switching applications where fast recovery times are crucial.
  • Power supply circuits and voltage regulators.
  • Communication and signal processing systems requiring high-speed diodes.

Q & A

  1. What is the BAV70E6327HTSA1 used for?

    The BAV70E6327HTSA1 is used for high-speed switching applications due to its fast recovery time and low forward voltage drop.

  2. What is the package type of the BAV70E6327HTSA1?

    The BAV70E6327HTSA1 is packaged in a SOT-23-3 package.

  3. What is the maximum reverse voltage of the BAV70E6327HTSA1?

    The maximum reverse voltage (VR) is 80 V, with a peak reverse voltage (VRM) of 85 V.

  4. What is the forward current rating of the BAV70E6327HTSA1?

    The forward current (IF) rating is 200 mA.

  5. Is the BAV70E6327HTSA1 RoHS compliant?
  6. What is the junction temperature range of the BAV70E6327HTSA1?

    The junction temperature (Tj) range is up to 150 °C.

  7. What is the reverse recovery time of the BAV70E6327HTSA1?

    The reverse recovery time (trr) is 4 ns.

  8. Is the BAV70E6327HTSA1 suitable for automotive applications?
  9. What is the total power dissipation of the BAV70E6327HTSA1?

    The total power dissipation (Ptot) is 250 mW.

  10. What are the storage temperature limits for the BAV70E6327HTSA1?

    The storage temperature (Tstg) range is from -65 °C to 150 °C.

Product Attributes

Diode Configuration:1 Pair Common Cathode
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):80 V
Current - Average Rectified (Io) (per Diode):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:150 nA @ 70 V
Operating Temperature - Junction:150°C (Max)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
0 Remaining View Similar

In Stock

$0.33
1,610

Please send RFQ , we will respond immediately.

Same Series
BAV70E6327HTSA1
BAV70E6327HTSA1
DIODE ARRAY GP 80V 200MA SOT23
BAV70E6433HTMA1
BAV70E6433HTMA1
DIODE ARRAY GP 80V 200MA SOT23
BAV70WH6327XTSA1
BAV70WH6327XTSA1
DIODE ARRAY GP 80V 200MA SOT323
BAV70WH6433XTMA1
BAV70WH6433XTMA1
DIODE ARRAY GP 80V 200MA SOT323
BAV70SH6327XTSA1
BAV70SH6327XTSA1
DIODE ARRAY GP 80V 200MA SOT363
BAV70SH6827XTSA1
BAV70SH6827XTSA1
DIODE ARRAY GP 80V 200MA SOT363
BAV70UE6327HTSA1
BAV70UE6327HTSA1
DIODE ARRAY GP 80V 200MA SC74-6
BAV 70T E6327
BAV 70T E6327
DIODE ARRAY GP 80V 200MA SC75
BAV 70 B5003
BAV 70 B5003
DIODE ARRAY GP 80V 200MA SOT23
BAV 70S E6433
BAV 70S E6433
DIODE ARRAY GP 80V 200MA SOT363
BAV70SH6727XTSA1
BAV70SH6727XTSA1
DIODE ARRAY GP 80V 200MA SOT363
BAV70UE6359HTMA1
BAV70UE6359HTMA1
DIODE SW 80V 100MA SC74

Similar Products

Part Number BAV70E6327HTSA1 BAV70UE6327HTSA1
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs
Diode Configuration 1 Pair Common Cathode 2 Pair Common Cathode
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 80 V 80 V
Current - Average Rectified (Io) (per Diode) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 4 ns 4 ns
Current - Reverse Leakage @ Vr 150 nA @ 70 V 150 nA @ 70 V
Operating Temperature - Junction 150°C (Max) 150°C (Max)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-74, SOT-457
Supplier Device Package PG-SOT23 PG-SC74-6

Related Product By Categories

BAV99,215
BAV99,215
Nexperia USA Inc.
DIODE ARRAY GP 100V 215MA SOT23
BAV 70W H6327
BAV 70W H6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
STPS41L60CG-TR
STPS41L60CG-TR
STMicroelectronics
DIODE ARRAY SCHOTTKY 60V D2PAK
MBRB10100CT
MBRB10100CT
SMC Diode Solutions
DIODE ARRAY SCHOTTKY 100V D2PAK
MBRB2060CT-E3/81
MBRB2060CT-E3/81
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 60V TO263AB
STTH16L06CG-TR
STTH16L06CG-TR
STMicroelectronics
DIODE ARRAY GP 600V 10A D2PAK
STPS20L60CT
STPS20L60CT
STMicroelectronics
DIODE ARRAY SCHOTTKY 60V TO220AB
MBR2060CT-G
MBR2060CT-G
Comchip Technology
DIODE ARRAY SCHOTTKY 60V TO220AB
BYQ28EB-200HE3_A/I
BYQ28EB-200HE3_A/I
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 5A TO263AB
BAV99/DG/B4VL
BAV99/DG/B4VL
Nexperia USA Inc.
DIODE SWITCHING TO-236AB
BYV32EB-200PQ
BYV32EB-200PQ
WeEn Semiconductors
DIODE ARRAY GP 200V 20A D2PAK
BAS40-04/ZLVL
BAS40-04/ZLVL
NXP USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT23

Related Product By Brand

BAS28E6433HTMA1
BAS28E6433HTMA1
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT143
BAV 70W E6433
BAV 70W E6433
Infineon Technologies
DIODE ARRAY GP 80V 200MA SOT323
BAS28E6359HTMA1
BAS28E6359HTMA1
Infineon Technologies
DIODE GP 80V 100MA SOT143
BAS40-02LE6327
BAS40-02LE6327
Infineon Technologies
BAS40 - HIGH SPEED SWITCHING, CL
BC847PNE6327BTSA1
BC847PNE6327BTSA1
Infineon Technologies
TRANS NPN/PNP 45V 0.1A SOT363-6
BC80740E6327
BC80740E6327
Infineon Technologies
TRANS PNP 45V 0.5A SOT23-3
BC858BW
BC858BW
Infineon Technologies
TRANS PNP 30V 0.1A SOT323
MMBTA56LT1HTSA1
MMBTA56LT1HTSA1
Infineon Technologies
TRANS PNP 80V 0.5A SOT23
IRFR5305TRPBF
IRFR5305TRPBF
Infineon Technologies
MOSFET P-CH 55V 31A DPAK
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
2N7002L6327HTSA1
2N7002L6327HTSA1
Infineon Technologies
MOSFET N-CH 60V 300MA SOT23-3
BSS138W L6327
BSS138W L6327
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3