MMBT3904Q-7-F
  • Share:

Diodes Incorporated MMBT3904Q-7-F

Manufacturer No:
MMBT3904Q-7-F
Manufacturer:
Diodes Incorporated
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.2A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT3904Q-7-F is a 40V NPN small signal bipolar junction transistor (BJT) manufactured by Diodes Incorporated. This transistor is specifically designed to meet the stringent requirements of automotive applications and is AEC-Q101 qualified, ensuring high reliability. It is packaged in a SOT23 case, which is a small surface-mount package, making it ideal for compact designs. The device is lead-free, RoHS compliant, and halogen and antimony free, aligning with 'Green' device standards.

Key Specifications

Parameter Value Unit
Collector-Base Voltage (VCEO) 40 V
Emitter-Base Voltage (VEBO) 6 V
Collector Current (IC) 200 mA
Power Dissipation (PD) 310 mW
Thermal Resistance, Junction to Ambient (RθJA) 403 °C/W
Operating and Storage Temperature Range -55 to +150 °C
ESD Ratings - Human Body Model (HBM) 4,000 V
Current Gain (hFE) 100 - 400
Collector-Emitter Saturation Voltage (VCE(SAT)) 0.20 - 0.30 V
Base-Emitter Saturation Voltage (VBE(SAT)) 0.65 - 0.85 V
Delay Time (td) 35 ns
Rise Time (tr) 35 ns
Storage Time (ts) 200 ns
Fall Time (tf) 50 ns

Key Features

  • Complementary PNP type available (MMBT3906Q).
  • Ideal for medium power amplification and switching applications.
  • Totally lead-free and fully RoHS compliant.
  • Halogen and antimony free, classified as a 'Green' device.
  • AEC-Q101 qualified and PPAP capable, ensuring high reliability for automotive applications.
  • Epitaxial planar die construction.
  • Package: SOT23 with molded plastic 'Green' molding compound and UL Flammability Classification Rating 94V-0.
  • Terminals: Matte tin plated leads, solderable per MIL-STD-202, Method 208.

Applications

The MMBT3904Q-7-F is primarily designed for automotive applications, where high reliability and specific change control are crucial. It is suitable for various automotive systems that require robust and efficient switching and amplification capabilities. Additionally, it can be used in general-purpose medium power amplification and switching applications in other industries where its specifications and features are beneficial.

Q & A

  1. What is the collector-base voltage (VCEO) of the MMBT3904Q-7-F?

    The collector-base voltage (VCEO) is 40V.

  2. Is the MMBT3904Q-7-F RoHS compliant?

    Yes, the MMBT3904Q-7-F is fully RoHS compliant and lead-free.

  3. What is the operating temperature range of the MMBT3904Q-7-F?

    The operating and storage temperature range is -55°C to +150°C.

  4. What is the current gain (hFE) of the MMBT3904Q-7-F?

    The current gain (hFE) ranges from 100 to 400.

  5. Is the MMBT3904Q-7-F suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

  6. What is the package type of the MMBT3904Q-7-F?

    The package type is SOT23.

  7. What are the ESD ratings for the MMBT3904Q-7-F?

    The ESD ratings are 4,000V for the Human Body Model (HBM).

  8. What are the switching characteristics of the MMBT3904Q-7-F?

    The switching characteristics include a delay time of 35ns, rise time of 35ns, storage time of 200ns, and fall time of 50ns.

  9. Is there a complementary PNP type available for the MMBT3904Q-7-F?

    Yes, the complementary PNP type is the MMBT3906Q.

  10. What is the thermal resistance, junction to ambient (RθJA), of the MMBT3904Q-7-F?

    The thermal resistance, junction to ambient (RθJA), is 403°C/W.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):200 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA
Current - Collector Cutoff (Max):50nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
Power - Max:310 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
0 Remaining View Similar

In Stock

$0.21
3,231

Please send RFQ , we will respond immediately.

Same Series
DD62M3200T0/AA
DD62M3200T0/AA
CONN D-SUB HD PLUG 62P VERT SLDR
RD15S10HV50/AA
RD15S10HV50/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S20LVLS/AA
DD15S20LVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LVLS
DD15S20LVLS
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HT20/AA
CBC13W3S10HT20/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S00X
DD26S2S00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26M20HV50/AA
DD26M20HV50/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S2S50V3X
DD26S2S50V3X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC21W1S10HE2X/AA
CBC21W1S10HE2X/AA
CONN D-SUB RCPT 21POS CRIMP
DD26S20WT0
DD26S20WT0
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S1S50V5S
CBC47W1S1S50V5S
CONN D-SUB RCPT 47POS CRIMP
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number MMBT3904Q-7-F MMBT3904T-7-F MMBT3906Q-7-F MMBT3904-7-F
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated Diodes Incorporated
Product Status Active Active Active Active
Transistor Type NPN NPN PNP NPN
Current - Collector (Ic) (Max) 200 mA 200 mA 200 mA 200 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA 300mV @ 5mA, 50mA 400mV @ 5mA, 50mA 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 50nA - 50nA 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V 100 @ 10mA, 1V 100 @ 10mA, 1V 100 @ 10mA, 1V
Power - Max 310 mW 150 mW 310 mW 300 mW
Frequency - Transition 300MHz 300MHz 250MHz 300MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SOT-523 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-523 SOT-23-3 SOT-23-3

Related Product By Categories

BCV26
BCV26
onsemi
TRANS PNP DARL 30V 1.2A SOT23-3
BFS20W,115
BFS20W,115
Nexperia USA Inc.
TRANS NPN 20V 0.025A SOT323
BD13610S
BD13610S
Fairchild Semiconductor
TRANS PNP 45V 1.5A TO126-3
NJD35N04T4G
NJD35N04T4G
onsemi
TRANS NPN DARL 350V 4A DPAK
MPS751-D26Z
MPS751-D26Z
onsemi
TRANS PNP 60V 2A TO92-3
BD140G
BD140G
onsemi
TRANS PNP 80V 1.5A TO126
BCP56H115
BCP56H115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC857A RFG
BC857A RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.1A SOT23
BC846BQBZ
BC846BQBZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
STF826
STF826
STMicroelectronics
TRANS PNP 30V 3A SOT89-3
BC817-25-QR
BC817-25-QR
Nexperia USA Inc.
TRANS NPN 45V 0.5A TO236AB
BUK9Y41-80E/GFX
BUK9Y41-80E/GFX
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

BAV70DW-7-F
BAV70DW-7-F
Diodes Incorporated
DIODE ARRAY GP 75V 150MA SOT363
1N5819HW-7-F
1N5819HW-7-F
Diodes Incorporated
DIODE SCHOTTKY 40V 1A SOD123
BAT760-7
BAT760-7
Diodes Incorporated
DIODE SCHOTTKY 30V 1A SOD323
BZX84C2V4S-7-F
BZX84C2V4S-7-F
Diodes Incorporated
DIODE ZENER ARRAY 2.4V SOT363
BZX84C13S-7-F
BZX84C13S-7-F
Diodes Incorporated
DIODE ZENER ARRAY 13V SOT363
BZX84C30S-7-F
BZX84C30S-7-F
Diodes Incorporated
DIODE ZENER ARRAY 30V SOT363
BZX84C3V9T-7-F
BZX84C3V9T-7-F
Diodes Incorporated
DIODE ZENER 3.9V 150MW SOT523
BZX84C4V7-7
BZX84C4V7-7
Diodes Incorporated
DIODE ZENER 4.7V 300MW SOT23-3
BZX84C3V0-7-G
BZX84C3V0-7-G
Diodes Incorporated
DIODE ZENER
BC857BLP-7
BC857BLP-7
Diodes Incorporated
TRANS PNP 45V 0.1A 3DFN
BCX5610TA
BCX5610TA
Diodes Incorporated
TRANS NPN 80V 1A SOT89-3
74LVC2G34FW4-7
74LVC2G34FW4-7
Diodes Incorporated
IC BUFFER NON-INVERT 5.5V 6DFN