MMBT3904-G
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Comchip Technology MMBT3904-G

Manufacturer No:
MMBT3904-G
Manufacturer:
Comchip Technology
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.2A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT3904-G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Comchip Technology. This transistor is designed for medium power amplification and switching applications. It features an epitaxial planar die construction and is fully RoHS compliant, making it suitable for a wide range of electronic devices. The MMBT3904-G is also qualified to AEC-Q101 standards for high reliability, ensuring its performance in demanding environments.

Key Specifications

Characteristic Symbol Value Unit
Collector-Base Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 200 mA
Power Dissipation PD 310 mW
Thermal Resistance, Junction to Ambient RθJA 403 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
DC Current Gain hFE 40 to 100
Collector-Emitter Saturation Voltage VCE(SAT) 0.20 to 0.30 V
Base-Emitter Saturation Voltage VBE(SAT) 0.65 to 0.85 V

Key Features

  • Epitaxial planar die construction
  • Complementary PNP type available (MMBT3906)
  • Ideal for medium power amplification and switching
  • Totally lead-free and fully RoHS compliant
  • Halogen and antimony free, making it a “green” device
  • Qualified to AEC-Q101 standards for high reliability
  • PPAP capable
  • SOT23 package with matte tin plated leads
  • UL flammability classification rating 94V-0
  • Moisture sensitivity level 1 per J-STD-020

Applications

The MMBT3904-G is versatile and can be used in a variety of applications, including:

  • Medium power amplification circuits
  • Switching circuits
  • Automotive electronics due to its AEC-Q101 qualification
  • General-purpose electronic devices requiring reliable and efficient transistor performance

Q & A

  1. What is the collector-base voltage (VCEO) of the MMBT3904-G?

    The collector-base voltage (VCEO) of the MMBT3904-G is 40 V.

  2. What is the maximum collector current (IC) for the MMBT3904-G?

    The maximum collector current (IC) for the MMBT3904-G is 200 mA.

  3. Is the MMBT3904-G RoHS compliant?

    Yes, the MMBT3904-G is totally lead-free and fully RoHS compliant.

  4. What is the thermal resistance from junction to ambient (RθJA) for the MMBT3904-G?

    The thermal resistance from junction to ambient (RθJA) for the MMBT3904-G is 403 °C/W.

  5. What is the operating and storage temperature range for the MMBT3904-G?

    The operating and storage temperature range for the MMBT3904-G is -55 to +150 °C.

  6. What is the DC current gain (hFE) range for the MMBT3904-G?

    The DC current gain (hFE) range for the MMBT3904-G is 40 to 100.

  7. What is the collector-emitter saturation voltage (VCE(SAT)) for the MMBT3904-G?

    The collector-emitter saturation voltage (VCE(SAT)) for the MMBT3904-G is 0.20 to 0.30 V.

  8. Is the MMBT3904-G qualified to any automotive standards?

    Yes, the MMBT3904-G is qualified to AEC-Q101 standards for high reliability.

  9. What is the package type of the MMBT3904-G?

    The MMBT3904-G comes in a SOT23 package.

  10. What is the moisture sensitivity level of the MMBT3904-G?

    The moisture sensitivity level of the MMBT3904-G is level 1 per J-STD-020.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):200 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
Power - Max:200 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3
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Similar Products

Part Number MMBT3904-G MMBT3906-G MMBT3904-7
Manufacturer Comchip Technology Comchip Technology Diodes Incorporated
Product Status Active Active Obsolete
Transistor Type NPN PNP NPN
Current - Collector (Ic) (Max) 200 mA 200 mA 200 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA 400mV @ 5mA, 50mA 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max) - 100µA 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 1V 100 @ 10mA, 1V 100 @ 10mA, 1V
Power - Max 200 mW 200 mW 300 mW
Frequency - Transition 300MHz 300MHz 300MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 SOT-23-3 SOT-23-3

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