TIP35C-S
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Bourns Inc. TIP35C-S

Manufacturer No:
TIP35C-S
Manufacturer:
Bourns Inc.
Package:
Tube
Description:
TRANS NPN 100V 25A SOT93
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The TIP35C-S is a high-power NPN silicon transistor manufactured by Bourns Inc. This transistor is designed for general-purpose power amplifier and switching applications. It is part of the TIP35 series, which includes complementary PNP types such as the TIP36C. The TIP35C-S is known for its high current handling and robust performance, making it suitable for a variety of power electronics and audio amplifier applications.

Key Specifications

Parameter Value Unit
Type Designator TIP35C-S -
Material of Transistor Silicon -
Polarity NPN -
Maximum Collector Power Dissipation (Pc) 90 W
Maximum Collector-Base Voltage (Vcb) 140 V
Maximum Collector-Emitter Voltage (Vce) 100 V
Maximum Emitter-Base Voltage (Veb) 5 V
Maximum Collector Current (Ic max) 25 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft) 3 MHz
Forward Current Transfer Ratio (hFE), MIN 20 -
Package TO-218 -

Key Features

  • High collector current of up to 25 A
  • Low collector-emitter saturation voltage
  • High current gain bandwidth product of 3 MHz
  • Excellent DC gain with a minimum hFE of 20
  • Complementary PNP type available (TIP36C)
  • Manufactured in planar technology with base island layout
  • Low leakage current (ICEO = 1.0 mA @ 30 and 60 V)

Applications

  • General-purpose power amplifier applications
  • Switching applications
  • Audio frequency amplifier output stages, particularly suitable for 75W audio amplifiers
  • Other high-power electronic devices requiring robust and reliable transistor performance

Q & A

  1. What is the maximum collector current of the TIP35C-S transistor?

    The maximum collector current of the TIP35C-S transistor is 25 A.

  2. What is the maximum collector-emitter voltage of the TIP35C-S transistor?

    The maximum collector-emitter voltage of the TIP35C-S transistor is 100 V.

  3. What is the transition frequency of the TIP35C-S transistor?

    The transition frequency of the TIP35C-S transistor is 3 MHz.

  4. What is the minimum forward current transfer ratio (hFE) of the TIP35C-S transistor?

    The minimum forward current transfer ratio (hFE) of the TIP35C-S transistor is 20.

  5. What is the package type of the TIP35C-S transistor?

    The package type of the TIP35C-S transistor is TO-218.

  6. What are the typical applications of the TIP35C-S transistor?

    The TIP35C-S transistor is typically used in general-purpose power amplifier and switching applications, as well as in audio frequency amplifier output stages.

  7. Does the TIP35C-S have a complementary PNP type?
  8. What is the maximum operating junction temperature of the TIP35C-S transistor?

    The maximum operating junction temperature of the TIP35C-S transistor is 150°C.

  9. What is the maximum collector-base voltage of the TIP35C-S transistor?

    The maximum collector-base voltage of the TIP35C-S transistor is 140 V.

  10. Is the TIP35C-S suitable for high-power audio amplifiers?

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):25 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:4V @ 5A, 25A
Current - Collector Cutoff (Max):1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 15A, 4V
Power - Max:3.5 W
Frequency - Transition:- 
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-218-3
Supplier Device Package:SOT-93
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Same Series
TIP35A-S
TIP35A-S
TRANS NPN 60V 25A SOT93
TIP35B-S
TIP35B-S
TRANS NPN 80V 25A SOT93

Similar Products

Part Number TIP35C-S TIP36C-S TIP30C-S TIP31C-S TIP33C-S TIP34C-S TIP35-S TIP35A-S TIP35B-S
Manufacturer Bourns Inc. Bourns Inc. Bourns Inc. Bourns Inc. Bourns Inc. Bourns Inc. Bourns Inc. Bourns Inc. Bourns Inc.
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
Transistor Type NPN PNP PNP NPN NPN - Darlington PNP NPN NPN NPN
Current - Collector (Ic) (Max) 25 A 25 A 1 A 3 A 10 A 10 A 25 A 25 A 25 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 100 V 100 V 100 V 40 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 4V @ 5A, 25A 4V @ 5A, 25A 700mV @ 125mA, 1A 1.2V @ 375mA, 3A 4V @ 2.5A, 10A 4V @ 2.5A, 10A 4V @ 5A, 25A 4V @ 5A, 25A 4V @ 5A, 25A
Current - Collector Cutoff (Max) 1mA 1mA 300µA 300µA 700µA 700µA 1mA 1mA 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 15A, 4V 10 @ 15A, 4V 15 @ 1A, 4V 10 @ 3A, 4V 20 @ 3A, 4V 20 @ 3A, 4V 10 @ 15A, 4V 10 @ 15A, 4V 10 @ 15A, 4V
Power - Max 3.5 W 3.5 W 2 W 40 W 3.5 W 3.5 W 3.5 W 3.5 W 3.5 W
Frequency - Transition - - - - - - - - -
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-218-3 TO-218-3 TO-220-3 TO-220-3 TO-218-3 TO-218-3 TO-218-3 TO-218-3 TO-218-3
Supplier Device Package SOT-93 SOT-93 TO-220 TO-220 SOT-93 SOT-93 SOT-93 SOT-93 SOT-93

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