Overview
The BDX54C is a PNP Darlington Bipolar Power Transistor designed for general purpose and low speed switching applications. This transistor is part of the BDX54 series, which includes complementary devices such as the BDX53B and BDX53C. The BDX54C is characterized by its high DC current gain, low collector-emitter saturation voltage, and monolithic construction with built-in base-emitter shunt resistors. It is packaged in a TO-220AB compact package and is available in Pb-free versions.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 100 | V |
| Collector-Base Voltage (VCBO) | 100 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 8 | A |
| Collector Peak Current (ICM) | 12 | A |
| Base Current (IB) | 0.2 | mA |
| Total Dissipation at Tc = 25°C (PTOT) | 60 | W |
| Storage Temperature (Tstg) | -65 to 150 | °C |
| Max. Operating Junction Temperature (TJ) | 150 | °C |
| DC Current Gain (hFE) | 2500 (Typ) @ IC = 4.0 Adc | |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 2.0 Vdc (Max) @ IC = 3.0 Adc |
Key Features
- High DC current gain (hFE = 2500 Typ @ IC = 4.0 Adc)
- Low collector-emitter saturation voltage (VCE(sat) = 2.0 Vdc Max @ IC = 3.0 Adc)
- Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
- Good hFE linearity and high fT frequency
- Pb-free packages available
- TO-220AB compact package
Applications
- Audio amplifiers
- Linear and switching industrial equipment
- General purpose and low speed switching applications
Q & A
- What is the collector-emitter voltage (VCEO) of the BDX54C transistor?
The collector-emitter voltage (VCEO) of the BDX54C transistor is 100 V.
- What is the maximum collector current (IC) of the BDX54C transistor?
The maximum collector current (IC) of the BDX54C transistor is 8 A.
- What is the typical DC current gain (hFE) of the BDX54C transistor?
The typical DC current gain (hFE) of the BDX54C transistor is 2500 at IC = 4.0 Adc.
- What is the collector-emitter saturation voltage (VCE(sat)) of the BDX54C transistor?
The collector-emitter saturation voltage (VCE(sat)) of the BDX54C transistor is 2.0 Vdc Max at IC = 3.0 Adc.
- What type of package does the BDX54C transistor use?
The BDX54C transistor is packaged in a TO-220AB compact package.
- Is the BDX54C transistor available in Pb-free versions?
Yes, the BDX54C transistor is available in Pb-free versions.
- What are some common applications of the BDX54C transistor?
The BDX54C transistor is commonly used in audio amplifiers, linear and switching industrial equipment, and general purpose and low speed switching applications.
- What is the maximum operating junction temperature (TJ) of the BDX54C transistor?
The maximum operating junction temperature (TJ) of the BDX54C transistor is 150°C.
- Does the BDX54C transistor have an integrated antiparallel collector-emitter diode?
Yes, the BDX54C transistor has a monolithic Darlington configuration with an integrated antiparallel collector-emitter diode.
- Is the BDX54C transistor still in production?
No, the BDX54C transistor is obsolete and no longer manufactured.
