Overview
The BDX53C-S is an NPN Silicon Power Darlington transistor manufactured by Bourns Inc., although it is now obsolete and not recommended for new designs. This transistor is part of the BDX53 series and is known for its high current handling and Darlington configuration. It is built using planar base island technology and features a monolithic Darlington configuration with an integrated antiparallel collector-emitter diode.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Base Voltage (VCBO) | 100 | V |
| Collector-Emitter Voltage (VCEO) | 100 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Continuous Collector Current (IC) | 8 | A |
| Continuous Base Current (IB) | 0.2 | A |
| Total Dissipation at Tc = 25°C (PTOT) | 60 | W |
| Operating Junction Temperature Range (TJ) | -65 to +150 | °C |
| DC Current Gain (hFE) at IC = 3 A, VCE = 3 V | 750 | |
| Base-Emitter Saturation Voltage (VBE(sat)) at IC = 3 A, IB = 12 mA | 2.5 | V |
| Collector-Emitter Saturation Voltage (VCE(sat)) at IC = 3 A, IB = 12 mA | 2 | V |
| Junction to Case Thermal Resistance (RθJC) | 2.08 | °C/W |
| Junction to Free Air Thermal Resistance (RθJA) | 62.5 | °C/W |
Key Features
- Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
- Good hFE linearity and high fT frequency
- Manufactured in planar base island technology
- High current handling capability with a maximum collector current of 8 A
- High collector-emitter voltage rating of up to 100 V
- Wide operating temperature range from -65°C to +150°C
- TO-220 package for through-hole mounting
Applications
- Audio amplifiers
- Linear and switching industrial equipment
Q & A
- What is the maximum collector current of the BDX53C-S transistor?
The maximum collector current is 8 A.
- What is the collector-emitter voltage rating of the BDX53C-S transistor?
The collector-emitter voltage rating is up to 100 V.
- What is the operating temperature range of the BDX53C-S transistor?
The operating temperature range is from -65°C to +150°C.
- What is the DC current gain (hFE) of the BDX53C-S transistor at IC = 3 A and VCE = 3 V?
The DC current gain (hFE) is 750.
- What is the base-emitter saturation voltage (VBE(sat)) of the BDX53C-S transistor at IC = 3 A and IB = 12 mA?
The base-emitter saturation voltage (VBE(sat)) is 2.5 V.
- What is the collector-emitter saturation voltage (VCE(sat)) of the BDX53C-S transistor at IC = 3 A and IB = 12 mA?
The collector-emitter saturation voltage (VCE(sat)) is 2 V.
- What is the junction to case thermal resistance (RθJC) of the BDX53C-S transistor?
The junction to case thermal resistance (RθJC) is 2.08 °C/W.
- What package type is the BDX53C-S transistor available in?
The transistor is available in a TO-220 package.
- Is the BDX53C-S transistor still in production?
No, the BDX53C-S transistor is obsolete and no longer manufactured.
- What are the typical applications of the BDX53C-S transistor?
The typical applications include audio amplifiers and linear and switching industrial equipment.
