TIP29C-S
  • Share:

Bourns Inc. TIP29C-S

Manufacturer No:
TIP29C-S
Manufacturer:
Bourns Inc.
Package:
Tube
Description:
TRANS NPN 100V 1A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TIP29C-S is an NPN epitaxial silicon power transistor manufactured by Bourns Inc., although it is noted that this specific part is obsolete and no longer in production. It is part of the TIP29 series, which includes complementary PNP transistors like the TIP30 series. The TIP29C-S is designed for medium power linear and switching applications.

Key Specifications

Parameter Value Unit
Polarity NPN
Maximum Collector-Base Voltage (Vcb) 140 V
Maximum Collector-Emitter Voltage (Vce) 100 V
Maximum Emitter-Base Voltage (Veb) 5 V
Maximum Collector Current (Ic max) 1 A
Maximum Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft) 3 MHz
Forward Current Transfer Ratio (hFE), MIN 40
Collector-Emitter Saturation Voltage (Vce(sat)) 0.7 V @ Ic = 1 A, Ib = 125 mA
Package TO-220

Key Features

  • High gain performance with very low saturation voltage.
  • Designed for medium power linear and switching applications.
  • Complementary to TIP30 series PNP transistors.
  • Pb-Free and RoHS compliant packages available.
  • Compact TO-220 plastic package.

Applications

  • General purpose amplifier applications.
  • Switching applications.
  • Series and shunt regulators.
  • Driver and output stages of hi-fi amplifiers.

Q & A

  1. What is the polarity of the TIP29C-S transistor?

    The TIP29C-S is an NPN transistor.

  2. What is the maximum collector-emitter voltage of the TIP29C-S?

    The maximum collector-emitter voltage is 100 V.

  3. What is the maximum collector current of the TIP29C-S?

    The maximum collector current is 1 A.

  4. What is the transition frequency of the TIP29C-S?

    The transition frequency is 3 MHz.

  5. What is the minimum forward current transfer ratio (hFE) of the TIP29C-S?

    The minimum forward current transfer ratio (hFE) is 40.

  6. What is the collector-emitter saturation voltage of the TIP29C-S?

    The collector-emitter saturation voltage is 0.7 V at Ic = 1 A, Ib = 125 mA.

  7. In what package is the TIP29C-S available?

    The TIP29C-S is available in a TO-220 plastic package.

  8. Is the TIP29C-S Pb-Free and RoHS compliant?
  9. What are some common applications of the TIP29C-S?

    The TIP29C-S is used in general purpose amplifier and switching applications, series and shunt regulators, and driver and output stages of hi-fi amplifiers.

  10. Is the TIP29C-S still in production?

    No, the TIP29C-S is obsolete and no longer manufactured.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 125mA, 1A
Current - Collector Cutoff (Max):300µA
DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 1A, 4V
Power - Max:2 W
Frequency - Transition:- 
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220
0 Remaining View Similar

In Stock

-
61

Please send RFQ , we will respond immediately.

Same Series
TIP29A-S
TIP29A-S
TRANS NPN 60V 1A TO220
TIP29B-S
TIP29B-S
TRANS NPN 80V 1A TO220

Similar Products

Part Number TIP29C-S TIP29D-S TIP29F-S TIP29E-S TIP29A-S TIP29B-S
Manufacturer Bourns Inc. Bourns Inc. Bourns Inc. Bourns Inc. Bourns Inc. Bourns Inc.
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
Transistor Type NPN NPN NPN NPN NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 100 V 120 V 160 V 140 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 125mA, 1A 700mV @ 125mA, 1A 700mV @ 125mA, 1A 700mV @ 125mA, 1A 700mV @ 125mA, 1A 700mV @ 125mA, 1A
Current - Collector Cutoff (Max) 300µA 300µA 300µA 300µA 300µA 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1A, 4V 40 @ 200mA, 4V 40 @ 200mA, 4V 40 @ 200mA, 4V 15 @ 1A, 4V 15 @ 1A, 4V
Power - Max 2 W 2 W 2 W 2 W 2 W 2 W
Frequency - Transition - - - - - -
Operating Temperature -65°C ~ 150°C (TJ) - - - -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220

Related Product By Categories

BC858B,215
BC858B,215
Nexperia USA Inc.
TRANS PNP 30V 0.1A TO236AB
SBC817-40LT1G
SBC817-40LT1G
onsemi
TRANS NPN 45V 0.5A SOT23-3
SMMBTA92LT1G
SMMBTA92LT1G
onsemi
TRANS PNP 300V 0.5A SOT23-3
TIP29C
TIP29C
STMicroelectronics
TRANS NPN 100V 1A TO220
BC807-40W-AU_R1_000A1
BC807-40W-AU_R1_000A1
Panjit International Inc.
TRANS PNP 45V 0.5A SOT323
MMBT5087LT1G
MMBT5087LT1G
onsemi
TRANS PNP 50V 0.05A SOT23-3
BD680
BD680
STMicroelectronics
TRANS PNP DARL 80V 4A SOT32-3
BC846AW_R1_00001
BC846AW_R1_00001
Panjit International Inc.
TRANS NPN 65V 0.1A SOT323
BLF278
BLF278
Ampleon USA Inc.
RF PFET, 2-ELEMENT, VERY HIGH FR
BC857CE6433HTMA1
BC857CE6433HTMA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT23
BC847BW-AQ
BC847BW-AQ
Diotec Semiconductor
TRANS NPN 45V 0.1A SOT323
TIP30CTU
TIP30CTU
onsemi
TRANS PNP 100V 1A TO220-3

Related Product By Brand

SMA6J33A-Q
SMA6J33A-Q
Bourns Inc.
TVS DIODE 33VWM 53.3VC DO214AC
BD648-S
BD648-S
Bourns Inc.
TRANS PNP DARL 80V 8A TO220
BDW93C-S
BDW93C-S
Bourns Inc.
TRANS NPN DARL 100V 12A TO220
BDX33C-S
BDX33C-S
Bourns Inc.
TRANS NPN DARL 100V 10A TO220
BDX53B-S
BDX53B-S
Bourns Inc.
TRANS NPN DARL 80V 8A TO220
TIP35C-S
TIP35C-S
Bourns Inc.
TRANS NPN 100V 25A SOT93
BDX34C-S
BDX34C-S
Bourns Inc.
TRANS PNP DARL 100V 10A TO220
TIP30C-S
TIP30C-S
Bourns Inc.
TRANS PNP 100V 1A TO220
TIP42A-S
TIP42A-S
Bourns Inc.
TRANS PNP 60V 6A TO220
BD242B-S
BD242B-S
Bourns Inc.
TRANS PNP 90V 3A TO220
TIP126D
TIP126D
Bourns Inc.
TRANS PNP DARL 80V 5A TO220
3224W-1-102E
3224W-1-102E
Bourns Inc.
TRIMMER 1K OHM 0.25W J LEAD TOP