BAS40-02V-V-G-08
  • Share:

Vishay General Semiconductor - Diodes Division BAS40-02V-V-G-08

Manufacturer No:
BAS40-02V-V-G-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 40V 120MA SOD523
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS40-02V-V-G-08 is a small signal Schottky diode produced by Vishay General Semiconductor - Diodes Division. This diode is known for its low turn-on voltage and fast switching capabilities, making it suitable for a variety of high-frequency and low-voltage applications. The device is packaged in a space-saving SOD-523 case and is available in both commercial and AEC-Q101 qualified versions, ensuring reliability in automotive and industrial environments.

Key Specifications

ParameterTest ConditionSymbolValueUnit
Repetitive peak reverse voltageTamb = 25 °CVRRM40V
Forward continuous currentTamb = 25 °CIF120mA
Surge forward currenttp = 10 ms square wave, Tj = 25 °C prior to surgeIFSM600mA
Power dissipationon FR-4 board with recommended soldering footprintPtot150mW
Thermal resistance junction to ambient airon FR-4 board according to JEDEC® 51-3 with recommended soldering footprintRthJA680K/W
Junction temperatureTj125°C
Operating temperature rangeTop-55 to +125°C
Storage temperature rangeTstg-55 to +150°C
Reverse breakdown voltageIR = 10 μA (pulsed)V(BR)40V
Leakage currentPulse test VR = 30 V, tp < 300 μsIR20 - 100nA
Forward voltagePulse test tp < 300 μs, IF = 1 mAVF380mV
Forward voltagePulse test tp < 300 μs, IF = 40 mAVF1000mV
Diode capacitanceVR = 0 V, f = 1 MHzCD4 - 5pF
Reverse recovery timeIF = 10 mA, IR = 10 mA, Irr = 1 mA, RL = 100 Ωtrr5ns

Key Features

  • Very low turn-on voltage and fast switching capabilities.
  • Protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
  • AEC-Q101 qualified available, ensuring reliability in automotive applications.
  • Space-saving SOD-523 package.
  • RoHS-compliant.
  • High temperature soldering guaranteed: 260 °C/10 s at terminals.

Applications

The BAS40-02V-V-G-08 is suitable for various applications requiring low-voltage and high-frequency performance, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is reliable for use in automotive environments.
  • Industrial control systems: Its fast switching and low turn-on voltage make it ideal for high-frequency applications.
  • Consumer electronics: The space-saving SOD-523 package and low power dissipation make it suitable for compact electronic devices.
  • Communication equipment: It can be used in RF and microwave circuits due to its low capacitance and fast recovery time.

Q & A

  1. What is the repetitive peak reverse voltage of the BAS40-02V-V-G-08?
    The repetitive peak reverse voltage is 40 V.
  2. What is the forward continuous current rating of this diode?
    The forward continuous current rating is 120 mA.
  3. What is the surge forward current rating for a 10 ms square wave?
    The surge forward current rating is 600 mA.
  4. What is the thermal resistance junction to ambient air for this diode?
    The thermal resistance junction to ambient air is 680 K/W on an FR-4 board with the recommended soldering footprint.
  5. What is the operating temperature range of the BAS40-02V-V-G-08?
    The operating temperature range is -55 °C to +125 °C.
  6. Is the BAS40-02V-V-G-08 AEC-Q101 qualified?
    Yes, the BAS40-02V-V-G-08 is available in an AEC-Q101 qualified version.
  7. What is the package type of the BAS40-02V-V-G-08?
    The package type is SOD-523.
  8. What is the forward voltage drop at 1 mA and 40 mA?
    The forward voltage drop is 380 mV at 1 mA and 1000 mV at 40 mA.
  9. What is the diode capacitance at 1 MHz?
    The diode capacitance is 4 - 5 pF at 1 MHz.
  10. What is the reverse recovery time of the BAS40-02V-V-G-08?
    The reverse recovery time is 5 ns.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):120mA (DC)
Voltage - Forward (Vf) (Max) @ If:380 mV @ 1 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:100 nA @ 30 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-79, SOD-523
Supplier Device Package:SOD-523
Operating Temperature - Junction:-55°C ~ 125°C
0 Remaining View Similar

In Stock

-
491

Please send RFQ , we will respond immediately.

Related Product By Categories

BAT5403WE6327HTSA1
BAT5403WE6327HTSA1
Infineon Technologies
DIODE SCHOT 30V 200MA SOD323-2
BAW56B5000
BAW56B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODES
BAS20WTHE3-TP
BAS20WTHE3-TP
Micro Commercial Co
DIODE GEN PURP 150V 200MA SOT323
STPS1L60ZF
STPS1L60ZF
STMicroelectronics
DIODE SCHOTTKY 60V 1A SOD123F
1N4002GP
1N4002GP
Fairchild Semiconductor
RECTIFIER DIODE
MRA4007T3
MRA4007T3
onsemi
DIODE GEN PURP 1KV 1A SMA
MUR440G
MUR440G
onsemi
DIODE GEN PURP 400V 4A DO201AD
1N4001GP-M3/54
1N4001GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
1N4004GPE-M3/54
1N4004GPE-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURPOSE DO-204AL
1N4937GHR1G
1N4937GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
BAT43 A0G
BAT43 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA DO35
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

SM6T33CA-M3/52
SM6T33CA-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 28.2VWM 45.7VC DO214AA
SM15T220AHE3/9AT
SM15T220AHE3/9AT
Vishay General Semiconductor - Diodes Division
TVS DIODE 188VWM 328VC DO214AB
SM6T15CAHE3/5B
SM6T15CAHE3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 12.8VWM 21.2VC DO214AA
MBR10100CT-E3/4W
MBR10100CT-E3/4W
Vishay General Semiconductor - Diodes Division
DIODE ARRAY SCHOTTKY 100V TO220
LL4148-M-08
LL4148-M-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 300MA SOD80
BAS16D-E3-08
BAS16D-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD123
1N4001GPEHE3/73
1N4001GPEHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
BZX55C8V2-TAP
BZX55C8V2-TAP
Vishay General Semiconductor - Diodes Division
DIODE ZENER 8.2V 500MW DO35
BZX84C47-E3-08
BZX84C47-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 47V 300MW SOT23-3
BZX84C6V2-HE3-08
BZX84C6V2-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 6.2V 300MW SOT23-3
BZX384C5V1-HE3-08
BZX384C5V1-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 5.1V 200MW SOD323
BZX384B11-G3-18
BZX384B11-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 11V 200MW SOD323