BAS40-02V-V-G-08
  • Share:

Vishay General Semiconductor - Diodes Division BAS40-02V-V-G-08

Manufacturer No:
BAS40-02V-V-G-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 40V 120MA SOD523
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS40-02V-V-G-08 is a small signal Schottky diode produced by Vishay General Semiconductor - Diodes Division. This diode is known for its low turn-on voltage and fast switching capabilities, making it suitable for a variety of high-frequency and low-voltage applications. The device is packaged in a space-saving SOD-523 case and is available in both commercial and AEC-Q101 qualified versions, ensuring reliability in automotive and industrial environments.

Key Specifications

ParameterTest ConditionSymbolValueUnit
Repetitive peak reverse voltageTamb = 25 °CVRRM40V
Forward continuous currentTamb = 25 °CIF120mA
Surge forward currenttp = 10 ms square wave, Tj = 25 °C prior to surgeIFSM600mA
Power dissipationon FR-4 board with recommended soldering footprintPtot150mW
Thermal resistance junction to ambient airon FR-4 board according to JEDEC® 51-3 with recommended soldering footprintRthJA680K/W
Junction temperatureTj125°C
Operating temperature rangeTop-55 to +125°C
Storage temperature rangeTstg-55 to +150°C
Reverse breakdown voltageIR = 10 μA (pulsed)V(BR)40V
Leakage currentPulse test VR = 30 V, tp < 300 μsIR20 - 100nA
Forward voltagePulse test tp < 300 μs, IF = 1 mAVF380mV
Forward voltagePulse test tp < 300 μs, IF = 40 mAVF1000mV
Diode capacitanceVR = 0 V, f = 1 MHzCD4 - 5pF
Reverse recovery timeIF = 10 mA, IR = 10 mA, Irr = 1 mA, RL = 100 Ωtrr5ns

Key Features

  • Very low turn-on voltage and fast switching capabilities.
  • Protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
  • AEC-Q101 qualified available, ensuring reliability in automotive applications.
  • Space-saving SOD-523 package.
  • RoHS-compliant.
  • High temperature soldering guaranteed: 260 °C/10 s at terminals.

Applications

The BAS40-02V-V-G-08 is suitable for various applications requiring low-voltage and high-frequency performance, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is reliable for use in automotive environments.
  • Industrial control systems: Its fast switching and low turn-on voltage make it ideal for high-frequency applications.
  • Consumer electronics: The space-saving SOD-523 package and low power dissipation make it suitable for compact electronic devices.
  • Communication equipment: It can be used in RF and microwave circuits due to its low capacitance and fast recovery time.

Q & A

  1. What is the repetitive peak reverse voltage of the BAS40-02V-V-G-08?
    The repetitive peak reverse voltage is 40 V.
  2. What is the forward continuous current rating of this diode?
    The forward continuous current rating is 120 mA.
  3. What is the surge forward current rating for a 10 ms square wave?
    The surge forward current rating is 600 mA.
  4. What is the thermal resistance junction to ambient air for this diode?
    The thermal resistance junction to ambient air is 680 K/W on an FR-4 board with the recommended soldering footprint.
  5. What is the operating temperature range of the BAS40-02V-V-G-08?
    The operating temperature range is -55 °C to +125 °C.
  6. Is the BAS40-02V-V-G-08 AEC-Q101 qualified?
    Yes, the BAS40-02V-V-G-08 is available in an AEC-Q101 qualified version.
  7. What is the package type of the BAS40-02V-V-G-08?
    The package type is SOD-523.
  8. What is the forward voltage drop at 1 mA and 40 mA?
    The forward voltage drop is 380 mV at 1 mA and 1000 mV at 40 mA.
  9. What is the diode capacitance at 1 MHz?
    The diode capacitance is 4 - 5 pF at 1 MHz.
  10. What is the reverse recovery time of the BAS40-02V-V-G-08?
    The reverse recovery time is 5 ns.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):120mA (DC)
Voltage - Forward (Vf) (Max) @ If:380 mV @ 1 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:100 nA @ 30 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-79, SOD-523
Supplier Device Package:SOD-523
Operating Temperature - Junction:-55°C ~ 125°C
0 Remaining View Similar

In Stock

-
491

Please send RFQ , we will respond immediately.

Related Product By Categories

STPS1045D
STPS1045D
STMicroelectronics
DIODE SCHOTTKY 45V 10A TO220AC
MBRS140T3G
MBRS140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMB
BAS16-E3-08
BAS16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
STPS5L60SY
STPS5L60SY
STMicroelectronics
DIODE SCHOTTKY 60V 5A SMC
STTH5L06B-TR
STTH5L06B-TR
STMicroelectronics
DIODE GEN PURP 600V 5A DPAK
PMEG6010CEJ/ZL115
PMEG6010CEJ/ZL115
Nexperia USA Inc.
RECTIFIER DIODE, SCHOTTKY
STPS4S200UFN
STPS4S200UFN
STMicroelectronics
200 V, 4 A SCHOTTKY RECTIFIER
BAT720-F2-0000HF
BAT720-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 40V 500MA SOT23
MURS120-F1-0000HF
MURS120-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 200V 1A DO214AC
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
NRVBD360VT4G
NRVBD360VT4G
onsemi
DIODE SCHOTTKY 60V 3A DPAK
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB

Related Product By Brand

SM15T39A-E3/57T
SM15T39A-E3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AB
SM6T30CAHM3_A/I
SM6T30CAHM3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AA
SM6T18AHE3/52
SM6T18AHE3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 15.3VWM 25.2VC DO214AA
BAV23C-HE3-18
BAV23C-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 200MA SOT23
BAT54WS-HE3-08
BAT54WS-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD323
BAS20-E3-08
BAS20-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
BZX384C9V1-E3-08
BZX384C9V1-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 9.1V 200MW SOD323
BZX384C10-E3-08
BZX384C10-E3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 200MW SOD323
BZX84C24-E3-18
BZX84C24-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 24V 300MW SOT23-3
BZX84C30-HE3-08
BZX84C30-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 30V 300MW SOT23-3
BZX384C20-E3-18
BZX384C20-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 20V 200MW SOD323
BZX84C51-G3-18
BZX84C51-G3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 51V 300MW SOT23-3