BAS40-02V-V-G-08
  • Share:

Vishay General Semiconductor - Diodes Division BAS40-02V-V-G-08

Manufacturer No:
BAS40-02V-V-G-08
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 40V 120MA SOD523
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS40-02V-V-G-08 is a small signal Schottky diode produced by Vishay General Semiconductor - Diodes Division. This diode is known for its low turn-on voltage and fast switching capabilities, making it suitable for a variety of high-frequency and low-voltage applications. The device is packaged in a space-saving SOD-523 case and is available in both commercial and AEC-Q101 qualified versions, ensuring reliability in automotive and industrial environments.

Key Specifications

ParameterTest ConditionSymbolValueUnit
Repetitive peak reverse voltageTamb = 25 °CVRRM40V
Forward continuous currentTamb = 25 °CIF120mA
Surge forward currenttp = 10 ms square wave, Tj = 25 °C prior to surgeIFSM600mA
Power dissipationon FR-4 board with recommended soldering footprintPtot150mW
Thermal resistance junction to ambient airon FR-4 board according to JEDEC® 51-3 with recommended soldering footprintRthJA680K/W
Junction temperatureTj125°C
Operating temperature rangeTop-55 to +125°C
Storage temperature rangeTstg-55 to +150°C
Reverse breakdown voltageIR = 10 μA (pulsed)V(BR)40V
Leakage currentPulse test VR = 30 V, tp < 300 μsIR20 - 100nA
Forward voltagePulse test tp < 300 μs, IF = 1 mAVF380mV
Forward voltagePulse test tp < 300 μs, IF = 40 mAVF1000mV
Diode capacitanceVR = 0 V, f = 1 MHzCD4 - 5pF
Reverse recovery timeIF = 10 mA, IR = 10 mA, Irr = 1 mA, RL = 100 Ωtrr5ns

Key Features

  • Very low turn-on voltage and fast switching capabilities.
  • Protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
  • AEC-Q101 qualified available, ensuring reliability in automotive applications.
  • Space-saving SOD-523 package.
  • RoHS-compliant.
  • High temperature soldering guaranteed: 260 °C/10 s at terminals.

Applications

The BAS40-02V-V-G-08 is suitable for various applications requiring low-voltage and high-frequency performance, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is reliable for use in automotive environments.
  • Industrial control systems: Its fast switching and low turn-on voltage make it ideal for high-frequency applications.
  • Consumer electronics: The space-saving SOD-523 package and low power dissipation make it suitable for compact electronic devices.
  • Communication equipment: It can be used in RF and microwave circuits due to its low capacitance and fast recovery time.

Q & A

  1. What is the repetitive peak reverse voltage of the BAS40-02V-V-G-08?
    The repetitive peak reverse voltage is 40 V.
  2. What is the forward continuous current rating of this diode?
    The forward continuous current rating is 120 mA.
  3. What is the surge forward current rating for a 10 ms square wave?
    The surge forward current rating is 600 mA.
  4. What is the thermal resistance junction to ambient air for this diode?
    The thermal resistance junction to ambient air is 680 K/W on an FR-4 board with the recommended soldering footprint.
  5. What is the operating temperature range of the BAS40-02V-V-G-08?
    The operating temperature range is -55 °C to +125 °C.
  6. Is the BAS40-02V-V-G-08 AEC-Q101 qualified?
    Yes, the BAS40-02V-V-G-08 is available in an AEC-Q101 qualified version.
  7. What is the package type of the BAS40-02V-V-G-08?
    The package type is SOD-523.
  8. What is the forward voltage drop at 1 mA and 40 mA?
    The forward voltage drop is 380 mV at 1 mA and 1000 mV at 40 mA.
  9. What is the diode capacitance at 1 MHz?
    The diode capacitance is 4 - 5 pF at 1 MHz.
  10. What is the reverse recovery time of the BAS40-02V-V-G-08?
    The reverse recovery time is 5 ns.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):40 V
Current - Average Rectified (Io):120mA (DC)
Voltage - Forward (Vf) (Max) @ If:380 mV @ 1 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):5 ns
Current - Reverse Leakage @ Vr:100 nA @ 30 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-79, SOD-523
Supplier Device Package:SOD-523
Operating Temperature - Junction:-55°C ~ 125°C
0 Remaining View Similar

In Stock

-
491

Please send RFQ , we will respond immediately.

Related Product By Categories

MBRM110ET1G
MBRM110ET1G
onsemi
DIODE SCHOTTKY 10V 1A POWERMITE
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
BYV29-500,127
BYV29-500,127
WeEn Semiconductors
DIODE GEN PURP 500V 9A TO220AC
STPSC406B-TR
STPSC406B-TR
STMicroelectronics
DIODE SCHOTTKY 600V 4A DPAK
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
MBR10100-M3/4W
MBR10100-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 10A TO220AC
STTH108
STTH108
STMicroelectronics
DIODE GEN PURP 800V 1A DO41
NSVBAS16W1T1G
NSVBAS16W1T1G
onsemi
SS SC88 SWITCHING DIODE
NRVBA210LNT3G
NRVBA210LNT3G
onsemi
DIODE SCHOTTKY 2A 10V SMA2
FFSB10120A-F085
FFSB10120A-F085
onsemi
1200V 10A AUTO SIC SBD
MBRS130LT3
MBRS130LT3
onsemi
DIODE SCHOTTKY 30V 1A SMB
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD

Related Product By Brand

SM6T12AHE3_A/I
SM6T12AHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AA
SM15T200AHE3/57T
SM15T200AHE3/57T
Vishay General Semiconductor - Diodes Division
TVS DIODE 171VWM 274VC DO214AB
SM15T12AHE3_A/H
SM15T12AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 10.2VWM 16.7VC DO214AB
SM15T150CAHM3/I
SM15T150CAHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AB
SM15T27AHM3/I
SM15T27AHM3/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 23.1VWM 37.5VC DO214AB
BYQ28EB-200HE3_A/P
BYQ28EB-200HE3_A/P
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 200V 5A TO263AB
BAT42W-HE3-18
BAT42W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
MURS140-E3/5BT
MURS140-E3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 2A DO214AA
BZX55C10-TR
BZX55C10-TR
Vishay General Semiconductor - Diodes Division
DIODE ZENER 10V 500MW DO35
BZX84C22-E3-18
BZX84C22-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 22V 300MW SOT23-3
BZX84C62-HE3-08
BZX84C62-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE ZENER 62V 300MW SOT23-3
BZX84B2V4-E3-18
BZX84B2V4-E3-18
Vishay General Semiconductor - Diodes Division
DIODE ZENER 2.4V 300MW SOT23-3