BC807-40 RFG
  • Share:

Taiwan Semiconductor Corporation BC807-40 RFG

Manufacturer No:
BC807-40 RFG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.5A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-40 RFG is a PNP general-purpose bipolar junction transistor (BJT) manufactured by Taiwan Semiconductor Corporation. This transistor is designed for a wide range of applications requiring low power loss, high efficiency, and high surge current capability. It is packaged in a SOT-323 surface mount configuration, making it ideal for automated placement and use in compact electronic designs.

Key Specifications

Parameter Value Unit
Transistor Polarity PNP
Collector-Emitter Voltage (VCEO) Max 45 V
Collector-Base Voltage (VCBO) Max 50 V
Emitter-Base Voltage (VEBO) Max 5 V
Maximum DC Collector Current 500 mA
Power Dissipation (Pd) 200 mW
Collector-Emitter Saturation Voltage 700 mV
Gain Bandwidth Product (fT) 80 MHz
Minimum Operating Temperature -55 °C
Maximum Operating Temperature 150 °C
DC Current Gain (hFE) Min/Max 250 / 600
Package SOT-323

Key Features

  • Low power loss and high efficiency.
  • Ideal for automated placement due to its surface mount configuration.
  • High surge current capability.
  • Moisture sensitivity level: level 1, per J-STD-020.
  • RoHS compliant and halogen-free according to IEC 61249-2-21.
  • Molding compound meets UL 94 V-0 flammability rating.
  • Matte tin plated leads, solderable per J-STD-002.
  • Meets JESD 201 class 1A whisker test.

Applications

  • Switching mode power supply (SMPS).
  • Adapters.
  • Lighting applications.
  • On-board DC/DC converters.

Q & A

  1. Q: What is the maximum collector-emitter voltage for the BC807-40 RFG?

    A: The maximum collector-emitter voltage (VCEO) for the BC807-40 RFG is 45V.

  2. Q: What is the maximum DC collector current for this transistor?

    A: The maximum DC collector current is 500 mA.

  3. Q: What is the power dissipation rating of the BC807-40 RFG?

    A: The power dissipation (Pd) rating is 200 mW.

  4. Q: What is the collector-emitter saturation voltage for this transistor?

    A: The collector-emitter saturation voltage is 700 mV.

  5. Q: What is the gain bandwidth product (fT) of the BC807-40 RFG?

    A: The gain bandwidth product (fT) is 80 MHz.

  6. Q: What are the operating temperature ranges for this transistor?

    A: The minimum operating temperature is -55°C, and the maximum operating temperature is 150°C.

  7. Q: Is the BC807-40 RFG RoHS compliant?

    A: Yes, the BC807-40 RFG is RoHS compliant and halogen-free.

  8. Q: What package type is used for the BC807-40 RFG?

    A: The BC807-40 RFG is packaged in a SOT-323 surface mount configuration.

  9. Q: What are some typical applications for the BC807-40 RFG?

    A: Typical applications include switching mode power supplies (SMPS), adapters, lighting applications, and on-board DC/DC converters.

  10. Q: What is the warranty period for the BC807-40 RFG?

    A: The warranty period is 1 year, covering any defects in materials and workmanship under normal use.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:300 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
0 Remaining View Similar

In Stock

$0.04
21,179

Please send RFQ , we will respond immediately.

Same Series
BC807-25 RFG
BC807-25 RFG
TRANS PNP 45V 0.5A SOT23
BC807-40 RFG
BC807-40 RFG
TRANS PNP 45V 0.5A SOT23

Similar Products

Part Number BC807-40 RFG BC807-40W RFG
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 200nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 250 @ 100mA, 1V
Power - Max 300 mW 200 mW
Frequency - Transition 100MHz 80MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323
Supplier Device Package SOT-23 SOT-323

Related Product By Categories

PMBTA45,215
PMBTA45,215
Nexperia USA Inc.
TRANS NPN 500V 0.15A TO236AB
MJD42CT4G
MJD42CT4G
onsemi
TRANS PNP 100V 6A DPAK
BLF3G21-30
BLF3G21-30
Ampleon USA Inc.
RF PFET, 1-ELEMENT, ULTRA HIGH F
2SC5658M3T5G
2SC5658M3T5G
onsemi
TRANS NPN 50V 0.1A SOT723
BC857AW_R1_00001
BC857AW_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT323
MCH6203-TL-E
MCH6203-TL-E
onsemi
TRANS NPN 50V 1A 6MCPH
BC846AW_R1_00001
BC846AW_R1_00001
Panjit International Inc.
TRANS NPN 65V 0.1A SOT323
BC847BWH6327XTSA1
BC847BWH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BCP53-10TX
BCP53-10TX
Nexperia USA Inc.
TRANS PNP 80V 1A SOT223
2N6045
2N6045
Solid State Inc.
TRANS NPN DARL 100V 8A TO220
BC807-25W/MIX
BC807-25W/MIX
Nexperia USA Inc.
TRANS PNP 45V 0.5A SOT323
PBSS5350Z/ZLF
PBSS5350Z/ZLF
Nexperia USA Inc.
TRANS PNP 50V 3A SOT223

Related Product By Brand

BAV99W RVG
BAV99W RVG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 85V 150MA SOT323
1N4937GHA0G
1N4937GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR420HA0G
MUR420HA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
1N4007GHB0G
1N4007GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO204AL
MUR460S M6
MUR460S M6
Taiwan Semiconductor Corporation
DIODE GENERAL PURPOSE DO214AB
1N4007GH A0G
1N4007GH A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A 1000V DO-41
BZV55B27 L0G
BZV55B27 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 27V 500MW MINI MELF
BZX84C3V9 RFG
BZX84C3V9 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 3.9V 300MW SOT23
BZV55B2V4 L1G
BZV55B2V4 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 2.4V 500MW MINI MELF
BZX79C20 A0G
BZX79C20 A0G
Taiwan Semiconductor Corporation
DIODE ZENER 20V 500MW DO35
MMBT3904L RFG
MMBT3904L RFG
Taiwan Semiconductor Corporation
TRANS NPN 40V 0.2A SOT23
BC817-40W RFG
BC817-40W RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.5A SOT323