BC807-40 RFG
  • Share:

Taiwan Semiconductor Corporation BC807-40 RFG

Manufacturer No:
BC807-40 RFG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.5A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC807-40 RFG is a PNP general-purpose bipolar junction transistor (BJT) manufactured by Taiwan Semiconductor Corporation. This transistor is designed for a wide range of applications requiring low power loss, high efficiency, and high surge current capability. It is packaged in a SOT-323 surface mount configuration, making it ideal for automated placement and use in compact electronic designs.

Key Specifications

Parameter Value Unit
Transistor Polarity PNP
Collector-Emitter Voltage (VCEO) Max 45 V
Collector-Base Voltage (VCBO) Max 50 V
Emitter-Base Voltage (VEBO) Max 5 V
Maximum DC Collector Current 500 mA
Power Dissipation (Pd) 200 mW
Collector-Emitter Saturation Voltage 700 mV
Gain Bandwidth Product (fT) 80 MHz
Minimum Operating Temperature -55 °C
Maximum Operating Temperature 150 °C
DC Current Gain (hFE) Min/Max 250 / 600
Package SOT-323

Key Features

  • Low power loss and high efficiency.
  • Ideal for automated placement due to its surface mount configuration.
  • High surge current capability.
  • Moisture sensitivity level: level 1, per J-STD-020.
  • RoHS compliant and halogen-free according to IEC 61249-2-21.
  • Molding compound meets UL 94 V-0 flammability rating.
  • Matte tin plated leads, solderable per J-STD-002.
  • Meets JESD 201 class 1A whisker test.

Applications

  • Switching mode power supply (SMPS).
  • Adapters.
  • Lighting applications.
  • On-board DC/DC converters.

Q & A

  1. Q: What is the maximum collector-emitter voltage for the BC807-40 RFG?

    A: The maximum collector-emitter voltage (VCEO) for the BC807-40 RFG is 45V.

  2. Q: What is the maximum DC collector current for this transistor?

    A: The maximum DC collector current is 500 mA.

  3. Q: What is the power dissipation rating of the BC807-40 RFG?

    A: The power dissipation (Pd) rating is 200 mW.

  4. Q: What is the collector-emitter saturation voltage for this transistor?

    A: The collector-emitter saturation voltage is 700 mV.

  5. Q: What is the gain bandwidth product (fT) of the BC807-40 RFG?

    A: The gain bandwidth product (fT) is 80 MHz.

  6. Q: What are the operating temperature ranges for this transistor?

    A: The minimum operating temperature is -55°C, and the maximum operating temperature is 150°C.

  7. Q: Is the BC807-40 RFG RoHS compliant?

    A: Yes, the BC807-40 RFG is RoHS compliant and halogen-free.

  8. Q: What package type is used for the BC807-40 RFG?

    A: The BC807-40 RFG is packaged in a SOT-323 surface mount configuration.

  9. Q: What are some typical applications for the BC807-40 RFG?

    A: Typical applications include switching mode power supplies (SMPS), adapters, lighting applications, and on-board DC/DC converters.

  10. Q: What is the warranty period for the BC807-40 RFG?

    A: The warranty period is 1 year, covering any defects in materials and workmanship under normal use.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):200nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100mA, 1V
Power - Max:300 mW
Frequency - Transition:100MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23
0 Remaining View Similar

In Stock

$0.04
21,179

Please send RFQ , we will respond immediately.

Same Series
BC807-25 RFG
BC807-25 RFG
TRANS PNP 45V 0.5A SOT23
BC807-40 RFG
BC807-40 RFG
TRANS PNP 45V 0.5A SOT23

Similar Products

Part Number BC807-40 RFG BC807-40W RFG
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 500 mA 500 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 200nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA, 1V 250 @ 100mA, 1V
Power - Max 300 mW 200 mW
Frequency - Transition 100MHz 80MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323
Supplier Device Package SOT-23 SOT-323

Related Product By Categories

SBC817-40LT1G
SBC817-40LT1G
onsemi
TRANS NPN 45V 0.5A SOT23-3
BCP54-10,135
BCP54-10,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT223
BC848B-TP
BC848B-TP
Micro Commercial Co
TRANS NPN 30V 0.1A SOT23
ST13007
ST13007
STMicroelectronics
TRANS NPN 400V 8A TO220
PBSS5350Z,135
PBSS5350Z,135
Nexperia USA Inc.
TRANS PNP 50V 3A SOT223
BC856BMBYL
BC856BMBYL
Nexperia USA Inc.
TRANS PNP 60V 0.1A DFN1006B-3
BC807-40/6215
BC807-40/6215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BCX52E6327
BCX52E6327
Infineon Technologies
SMALL SIGNAL BIPOLAR TRANSISTOR
BFU910F115
BFU910F115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC857CQB-QZ
BC857CQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC857BT,115
BC857BT,115
NXP USA Inc.
TRANS PNP 45V 0.1A SC75
2N6107-AP
2N6107-AP
Micro Commercial Co
TRANS PNP 70V 7A TO220AB

Related Product By Brand

BAT54T REG
BAT54T REG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 30V SOT363
BAV21W-G RHG
BAV21W-G RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 200MA SOD123
MUR160A
MUR160A
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
MUR460S M6G
MUR460S M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
1N4004GHB0G
1N4004GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
BZV55C51 L0G
BZV55C51 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 51V 500MW MINI MELF
BZV55B27 L0G
BZV55B27 L0G
Taiwan Semiconductor Corporation
DIODE ZENER 27V 500MW MINI MELF
BZX585B13 RSG
BZX585B13 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 13V 200MW SOD523F
BZX84C22 RFG
BZX84C22 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 22V 300MW SOT23
ZM4742A L0G
ZM4742A L0G
Taiwan Semiconductor Corporation
DIODE ZENER 12V 1W MELF
BZV55B3V6 L1G
BZV55B3V6 L1G
Taiwan Semiconductor Corporation
DIODE ZENER 3.6V 500MW MINI MELF
BSS84W
BSS84W
Taiwan Semiconductor Corporation
-60, -0.14, SINGLE P-CHANNEL