BAV21WS-G RRG
  • Share:

Taiwan Semiconductor Corporation BAV21WS-G RRG

Manufacturer No:
BAV21WS-G RRG
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 200MA SOD323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAV21WS-G RRG is a general-purpose small signal switching diode manufactured by Taiwan Semiconductor Corporation. This diode is part of the BAVxWS series, which includes the BAV19WS-G, BAV20WS-G, and BAV21WS-G models. The BAV21WS-G RRG is designed for high conductance and fast switching applications, making it suitable for a wide range of electronic circuits.

The device is packaged in a SOD-323 (SC-76) surface mount package, which is ideal for automatic insertion and is halogen-free, complying with IEC 61249-2-21 standards. It is also compliant with RoHS Directive 2011/65/EU and WEEE 2002/96/EC regulations.

Key Specifications

Parameter Symbol Unit Value
Average Forward Current IF mA 200
Repetitive Peak Reverse Voltage VRRM V 250
Non-Repetitive Peak Forward Surge Current (t = 1s) IFSM A 0.5
Non-Repetitive Peak Forward Surge Current (t = 1μs) IFSM A 2.5
Junction Temperature Range TJ °C -65 to +150
Storage Temperature Range TSTG °C -65 to +150
Forward Voltage (IF = 100mA, TJ = 25°C) VF V 1.00
Forward Voltage (IF = 200mA, TJ = 25°C) VF V 1.25
Reverse Leakage Current (VR = 200V, TJ = 25°C) IR nA 100
Junction Capacitance (f = 1MHz, VR = 0V) CJ pF 5
Reverse Recovery Time trr ns 50
Power Dissipation PD mW 200
Thermal Resistance Junction to Ambient RθJA °C/W 625

Key Features

  • High conductance and fast switching capabilities.
  • Surface mount package (SOD-323) suitable for automatic insertion.
  • Halogen-free compound, compliant with IEC 61249-2-21 standards.
  • Compliant with RoHS Directive 2011/65/EU and WEEE 2002/96/EC regulations.
  • Low forward voltage drop and low reverse leakage current.
  • High junction capacitance and fast reverse recovery time.
  • Wide operating temperature range from -65°C to +150°C.

Applications

  • General-purpose small signal switching in electronic circuits.
  • High-frequency switching applications.
  • Automotive and industrial control systems.
  • Consumer electronics and telecommunications equipment.
  • Power supply and voltage regulation circuits.

Q & A

  1. What is the maximum average forward current of the BAV21WS-G RRG diode?

    The maximum average forward current is 200 mA.

  2. What is the repetitive peak reverse voltage of the BAV21WS-G RRG diode?

    The repetitive peak reverse voltage is 250 V.

  3. What is the junction temperature range of the BAV21WS-G RRG diode?

    The junction temperature range is from -65°C to +150°C.

  4. Is the BAV21WS-G RRG diode halogen-free?
  5. What is the typical forward voltage drop of the BAV21WS-G RRG diode at 100 mA?

    The typical forward voltage drop at 100 mA is 1.00 V.

  6. What is the reverse recovery time of the BAV21WS-G RRG diode?

    The reverse recovery time is 50 ns.

  7. What is the power dissipation of the BAV21WS-G RRG diode?

    The power dissipation is 200 mW.

  8. What is the thermal resistance junction to ambient of the BAV21WS-G RRG diode?

    The thermal resistance junction to ambient is 625 °C/W.

  9. Is the BAV21WS-G RRG diode compliant with RoHS and WEEE regulations?
  10. What package type is used for the BAV21WS-G RRG diode?

    The BAV21WS-G RRG diode is packaged in a SOD-323 (SC-76) surface mount package.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):200mA
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 100 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-76, SOD-323
Supplier Device Package:SOD-323
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$0.04
16,411

Please send RFQ , we will respond immediately.

Same Series
BAV19WS-G RRG
BAV19WS-G RRG
DIODE GEN PURP 100V 200MA SOD323
BAV20WS-G RRG
BAV20WS-G RRG
DIODE GEN PURP 150V 200MA SOD323

Similar Products

Part Number BAV21WS-G RRG BAV20WS-G RRG
Manufacturer Taiwan Semiconductor Corporation Taiwan Semiconductor Corporation
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 150 V
Current - Average Rectified (Io) 200mA 200mA
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 100 mA 1.25 V @ 100 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 150 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case SC-76, SOD-323 SC-76, SOD-323
Supplier Device Package SOD-323 SOD-323
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C

Related Product By Categories

STPS1150AY
STPS1150AY
STMicroelectronics
DIODE SCHOTTKY 150V 1A SMA
STPS160AFN
STPS160AFN
STMicroelectronics
60 V, 1 A POWER SCHOTTKY RECTIFI
MUR115G
MUR115G
onsemi
DIODE GEN PURP 150V 1A AXIAL
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
SBAT54XV2T1G
SBAT54XV2T1G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
1N4937GP-E3/54
1N4937GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
BAS16WS-HE3-18
BAS16WS-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 250MA SOD323
BAS21E6433HTMA1
BAS21E6433HTMA1
Infineon Technologies
DIODE GEN PURP 200V 250MA SOT23
NRVBS260NT3G
NRVBS260NT3G
onsemi
DIODE SCHOTTKY 2A 60V 1202 SMB2
MUR4100E
MUR4100E
onsemi
DIODE GEN PURP 1KV 4A DO201AD
1N4001GPHE3/54
1N4001GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
MBR120VLSFT1H
MBR120VLSFT1H
onsemi
DIODE SCHOTTKY

Related Product By Brand

1.5KE120AH
1.5KE120AH
Taiwan Semiconductor Corporation
TVS DIODE 102VWM 165VC DO201
BAW56 RFG
BAW56 RFG
Taiwan Semiconductor Corporation
DIODE ARRAY GP 70V 200MA SOT23
1N5406GH
1N5406GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
MUR460S R7G
MUR460S R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
1N4004GR0
1N4004GR0
Taiwan Semiconductor Corporation
1A,400V,STD.GLASS PASSIVATED REC
MUR420S R6G
MUR420S R6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB
BZX585B13 RSG
BZX585B13 RSG
Taiwan Semiconductor Corporation
DIODE ZENER 13V 200MW SOD523F
BZX84C4V3 RFG
BZX84C4V3 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 4.3V 300MW SOT23
BZX84C6V2 RFG
BZX84C6V2 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 6.2V 300MW SOT23
BC847B RFG
BC847B RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.1A SOT23
BC857A RFG
BC857A RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.1A SOT23
BC847AW RFG
BC847AW RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.1A SOT323