Overview
The VNS1NV04P-E, produced by STMicroelectronics, is a monolithic device designed using the VIPower M0-3 Technology. This component is intended to replace standard Power MOSFETs in applications ranging from DC to 50 kHz. It is part of the OMNIFET II family, known for its fully autoprotected features, making it suitable for harsh environments. The device includes built-in thermal shutdown, linear current limitation, and overvoltage clamp, ensuring robust protection and reliability. Fault feedback can be detected by monitoring the voltage at the input pin, enhancing diagnostic capabilities.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Drain-source voltage | VDS | Internally clamped | V |
Input voltage | VIN | Internally clamped | V |
Input current | IIN | ±20 mA | mA |
Drain current | ID | Internally limited | A |
On-state resistance | RON | 250 mΩ | mΩ |
Current limitation | ILIMH | 1.7 A | A |
Drain-source clamp voltage | VCLAMP | 40 V | V |
Operating junction temperature | Tj | -40 to 150 °C | °C |
Case operating temperature | Tc | -40 to 150 °C | °C |
Storage temperature | Tstg | -55 to 150 °C | °C |
Package | SO-8 |
Key Features
- ESD protection
- Diagnostic feedback through input pin
- Compatible with standard Power MOSFET
- Linear current limitation
- Short circuit protection
- Thermal shutdown
- Low current drawn from input pin
- Direct access to the gate of the Power MOSFET (analog driving)
- Integrated clamp
Applications
The VNS1NV04P-E is suitable for a variety of applications, including but not limited to:
- Automotive systems: Given its robust protection features, it is ideal for use in automotive environments where reliability and durability are critical.
- Industrial control systems: The device's ability to handle high currents and voltages makes it suitable for industrial control applications.
- Power distribution systems: It can be used in power distribution systems where protection against short circuits, overvoltage, and thermal issues is necessary.
- General-purpose power switching: Its compatibility with standard Power MOSFETs and advanced protection features make it a versatile choice for various power switching applications.
Q & A
- What is the VNS1NV04P-E used for?
The VNS1NV04P-E is used as a replacement for standard Power MOSFETs in applications ranging from DC to 50 kHz, offering advanced protection features.
- What are the key protection features of the VNS1NV04P-E?
The key protection features include thermal shutdown, linear current limitation, short circuit protection, and an integrated overvoltage clamp.
- How does the VNS1NV04P-E provide diagnostic feedback?
Diagnostic feedback can be detected by monitoring the voltage at the input pin.
- What is the maximum drain-source voltage for the VNS1NV04P-E?
The drain-source voltage is internally clamped, but the device can handle up to 40 V for the drain-source clamp voltage.
- What is the operating junction temperature range for the VNS1NV04P-E?
The operating junction temperature range is -40 to 150 °C.
- What package type is the VNS1NV04P-E available in?
The VNS1NV04P-E is available in an SO-8 package.
- Does the VNS1NV04P-E have ESD protection?
Yes, the VNS1NV04P-E includes ESD protection.
- Can the VNS1NV04P-E be used in automotive applications?
Yes, it is suitable for automotive systems due to its robust protection features and reliability.
- What is the typical on-state resistance of the VNS1NV04P-E?
The typical on-state resistance is 250 mΩ.
- Is the VNS1NV04P-E RoHS compliant?
Yes, the VNS1NV04P-E is RoHS compliant.