Overview
The VNS3NV04PTR-E is a monolithic device designed by STMicroelectronics using their VIPower M0-3 Technology. This OMNIFET II fully autoprotected Power MOSFET is intended to replace standard Power MOSFETs in applications ranging from DC up to 50 kHz. It is built with integrated protection features such as thermal shutdown, linear current limitation, and overvoltage clamp, which protect the chip in harsh environments. The device also provides diagnostic feedback through the input pin and is compatible with standard Power MOSFETs, adhering to the 2002/95/EC European directive.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| RDS(on) | 120 mΩ | mΩ |
| Ilim (Current Limitation) | 3.5 A | A |
| Vclamp (Drain-source Clamp Voltage) | 40 V | V |
| VDS (Drain-source Voltage) | Internally clamped | V |
| VIN (Input Voltage) | Internally clamped | V |
| IIN (Input Current) | +/-20 mA | mA |
| ID (Drain Current) | Internally limited | A |
| Tj (Operating Junction Temperature) | Internally limited | °C |
| Tc (Case Operating Temperature) | Internally limited | °C |
| Tstg (Storage Temperature) | -55 to 150 °C | °C |
| Rthj-case (Thermal Resistance Junction-Case) | 18 °C/W | °C/W |
| Rthj-amb (Thermal Resistance Junction-Ambient) | 70 °C/W (SOT-223), 65 °C/W (SO-8) | °C/W |
Key Features
- Linear current limitation
- Thermal shutdown
- Short circuit protection
- Integrated clamp
- Low current drawn from input pin
- Diagnostic feedback through input pin
- ESD protection
- Direct access to the gate of the Power MOSFET (analog driving)
- Compatible with standard Power MOSFET in compliance with the 2002/95/EC European directive
Applications
The VNS3NV04PTR-E is suitable for a wide range of applications, including but not limited to:
- Automotive systems requiring robust and reliable power switching
- Industrial control systems where high-frequency switching is necessary
- Power supplies and DC-DC converters that demand high efficiency and protection
- Motor control and drive systems
- Any application requiring high-frequency switching up to 50 kHz
Q & A
- What is the VIPower M0-3 Technology used in the VNS3NV04PTR-E?
The VIPower M0-3 Technology is a proprietary technology from STMicroelectronics designed to enhance the performance and reliability of Power MOSFETs.
- What are the key protection features of the VNS3NV04PTR-E?
The device includes linear current limitation, thermal shutdown, short circuit protection, integrated clamp, and ESD protection.
- How can fault feedback be detected in the VNS3NV04PTR-E?
Fault feedback can be detected by monitoring the voltage at the input pin.
- What is the maximum drain-source voltage (VDS) for the VNS3NV04PTR-E?
The VDS is internally clamped.
- What is the thermal resistance junction-case (Rthj-case) for the SO-8 package?
The Rthj-case is 18 °C/W for the SOT-223 package and 18 °C/W for the SO-8 package as well.
- What is the operating junction temperature range for the VNS3NV04PTR-E?
The operating junction temperature is internally limited.
- Is the VNS3NV04PTR-E RoHS compliant?
- What are the typical applications for the VNS3NV04PTR-E?
The device is suitable for automotive systems, industrial control systems, power supplies, motor control, and other high-frequency switching applications.
- What is the maximum storage temperature for the VNS3NV04PTR-E?
The storage temperature range is -55 to 150 °C.
- Can the VNS3NV04PTR-E be used as a standard Power MOSFET?
