Overview
The VNS3NV04TR-E is an OMNIFET II fully autoprotected Power MOSFET designed by STMicroelectronics using their VIPower M0-3 Technology. This device is intended to replace standard Power MOSFETs in applications ranging from DC to 50 kHz. It is particularly suited for harsh environments due to its built-in protection features such as thermal shutdown, linear current limitation, and overvoltage clamp. The VNS3NV04TR-E is AEC-Q100 qualified and is RoHS compliant, making it suitable for automotive and other demanding applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Package Name | SO-8 | |
| Drain-Source Voltage (VDSn) | Internally clamped | V |
| Input Voltage (VINn) | Internally clamped | V |
| Input Current (IINn) | +/- 20 mA | mA |
| Drain Current (IDn) | Internally limited | A |
| Static Drain-Source On Resistance (RDS(on)) | 120 mΩ (typ) | mΩ |
| Current Limitation (ILIMH) | 3.5 A (typ) | A |
| Drain-Source Clamp Voltage (VCLAMP) | 40 V (typ) | V |
| Operating Junction Temperature (Tj) | -40°C to 150°C | °C |
| Storage Temperature (Tstg) | -55°C to 150°C | °C |
| ESD Protection | 4000 V (Human Body Model) | V |
Key Features
- Linear current limitation and thermal shutdown for protection in harsh environments.
- Integrated overvoltage clamp and short-circuit protection.
- Low current drawn from the input pin.
- Diagnostic feedback through the input pin.
- ESD protection according to the Human Body model.
- Direct access to the gate of the Power MOSFET for analog driving.
- Compatible with standard Power MOSFETs.
- AEC-Q100 qualified and RoHS compliant (Ecopack2).
Applications
The VNS3NV04TR-E is designed for use in various automotive and industrial applications where robust and reliable power management is crucial. These include but are not limited to:
- Automotive systems requiring high reliability and protection against harsh conditions.
- Industrial power management systems.
- DC-DC converters and power supplies.
- Motor control and drive systems.
Q & A
- What is the VNS3NV04TR-E?
The VNS3NV04TR-E is an OMNIFET II fully autoprotected Power MOSFET designed by STMicroelectronics.
- What technology is used in the VNS3NV04TR-E?
It is designed using STMicroelectronics' VIPower M0-3 Technology.
- What are the key protection features of the VNS3NV04TR-E?
It includes thermal shutdown, linear current limitation, overvoltage clamp, and short-circuit protection.
- Is the VNS3NV04TR-E RoHS compliant?
- What is the typical static drain-source on resistance (RDS(on)) of the VNS3NV04TR-E?
The typical RDS(on) is 120 mΩ.
- What is the current limitation (ILIMH) of the VNS3NV04TR-E?
The typical current limitation is 3.5 A.
- What is the drain-source clamp voltage (VCLAMP) of the VNS3NV04TR-E?
The typical drain-source clamp voltage is 40 V.
- Does the VNS3NV04TR-E have ESD protection?
- What are the operating temperature ranges for the VNS3NV04TR-E?
The operating junction temperature range is -40°C to 150°C, and the storage temperature range is -55°C to 150°C.
- Is the VNS3NV04TR-E AEC-Q100 qualified?
