Overview
The VND3NV04TR-E is a monolithic device designed by STMicroelectronics using their VIPower™ M0-3 Technology. This fully autoprotected Power MOSFET is intended to replace standard Power MOSFETs in applications ranging from DC to 50 kHz. It is part of the OMNIFET II family, known for its robust protection features and high reliability in harsh environments.
Key Specifications
| Parameter | Value |
|---|---|
| Continuous Drain Current (ID) | 3.5 A |
| Drain to Source Breakdown Voltage | 40 V |
| Drain to Source Resistance (RDS(on)) | 120 mΩ |
| Fall Time | 250 ns |
| Package | DPAK (TO-252) |
Key Features
- Linear current limitation
- Thermal shutdown
- Short circuit protection
- Integrated clamp
- Low current drawn from input pin
- Diagnostic feedback through input pin
- ESD protection
- Direct access to the gate of the Power MOSFET (analog driving)
- Compatible with standard Power MOSFETs in compliance with the 2002/95/EC European Directive
Applications
The VND3NV04TR-E is suitable for a variety of applications, including but not limited to, automotive systems, industrial control, and power management in electronic devices. Its robust protection features make it ideal for use in harsh environments where reliability and safety are critical.
Q & A
- What is the continuous drain current of the VND3NV04TR-E? The continuous drain current is 3.5 A.
- What is the drain to source breakdown voltage of the VND3NV04TR-E? The drain to source breakdown voltage is 40 V.
- What is the on-resistance (RDS(on)) of the VND3NV04TR-E? The on-resistance is 120 mΩ.
- What package type is the VND3NV04TR-E available in? The VND3NV04TR-E is available in the DPAK (TO-252) package.
- What are the key protection features of the VND3NV04TR-E? Key protection features include linear current limitation, thermal shutdown, short circuit protection, and integrated clamp.
- How does the VND3NV04TR-E provide diagnostic feedback? Diagnostic feedback is provided through the input pin.
- Is the VND3NV04TR-E compatible with standard Power MOSFETs? Yes, it is compatible with standard Power MOSFETs and complies with the 2002/95/EC European Directive.
- What is the fall time of the VND3NV04TR-E? The fall time is 250 ns.
- What technology is used in the design of the VND3NV04TR-E? The VND3NV04TR-E is designed using STMicroelectronics’ VIPower™ M0-3 Technology.
- In what frequency range can the VND3NV04TR-E be used? The VND3NV04TR-E can be used in applications from DC up to 50 kHz.
