Overview
The VND1NV04TR-E is a monolithic device designed by STMicroelectronics using their VIPower® M0-3 Technology. This OMNIFET II fully autoprotected Power MOSFET is intended to replace standard Power MOSFETs in applications ranging from DC to 50 KHz. The device is built with integrated protection features such as thermal shutdown, linear current limitation, and overvoltage clamp, making it robust in harsh environments. It also provides diagnostic feedback through the input pin and has low current draw from the input pin, enhancing its reliability and efficiency.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Drain-source voltage (VIN=0 V) | VDS | Internally clamped | V |
Input voltage | VIN | Internally clamped | V |
Input current | IIN | ±20 mA | mA |
Minimum input series impedance | RIN | 330 Ω | Ω |
Drain current | ID | Internally limited | A |
Reverse DC output current | IR | -3 A | A |
Electrostatic discharge (R=1.5 KΩ, C=100 pF) | VESD1 | 4000 V | V |
Total dissipation at Tc=25 °C | Ptot | 7 W (SOT-223), 8.3 W (SO-8), 35 W (DPAK) | W |
Operating junction temperature | Tj | Internally limited | °C |
Case operating temperature | Tc | Internally limited | °C |
Storage temperature | Tstg | -55 to 150 °C | °C |
On-state resistance (per channel) | RON | 250 mΩ | mΩ |
Current limitation (typical) | ILIMH | 1.7 A | A |
Drain-source clamp voltage | VCLAMP | 40 V | V |
Key Features
- Linear current limitation
- Thermal shutdown
- Short circuit protection
- Integrated clamp
- Low current drawn from input pin
- Diagnostic feedback through input pin
- ESD protection
- Direct access to the gate of the Power MOSFET (analog driving)
- Compatible with standard Power MOSFETs
Applications
The VND1NV04TR-E is suitable for a variety of applications, including but not limited to:
- Power distribution and management in automotive and industrial systems
- Protection and control in DC-DC converters and power supplies
- Motor control and driver circuits
- High-frequency switching applications up to 50 KHz
Q & A
- What is the maximum drain-source voltage for the VND1NV04TR-E?
The drain-source voltage is internally clamped, but it should not exceed the specified absolute maximum ratings to avoid damage.
- What is the typical current limitation of the VND1NV04TR-E?
The typical current limitation is 1.7 A.
- Does the VND1NV04TR-E have built-in thermal protection?
Yes, it has built-in thermal shutdown and overtemperature protection.
- What is the on-state resistance of the VND1NV04TR-E?
The on-state resistance is 250 mΩ per channel.
- Is the VND1NV04TR-E RoHS compliant?
Yes, the VND1NV04TR-E is RoHS compliant.
- What are the available package types for the VND1NV04TR-E?
The device is available in TO-252 (DPAK), SOT-223, and SO-8 packages.
- Can the VND1NV04TR-E be used in high-frequency applications?
Yes, it is suitable for applications up to 50 KHz.
- How does the VND1NV04TR-E provide diagnostic feedback?
The device provides diagnostic feedback through the input pin, allowing for fault detection by monitoring the voltage at the input pin.
- Is the VND1NV04TR-E still in production?
No, the VND1NV04TR-E is obsolete and no longer manufactured. However, substitutes are available.
- What is the storage temperature range for the VND1NV04TR-E?
The storage temperature range is -55 to 150 °C.