Overview
The VND5N07, specifically the VND5N0713TR, is a monolithic device designed by STMicroelectronics using their VIPower M0 technology. This device is intended to replace standard Power MOSFETs in applications ranging from DC to 50 kHz. It is particularly suited for automotive and other high-reliability environments due to its integrated protection features and robust design.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | Internally clamped | V |
| Input Voltage (VIN) | 18 | V |
| Drain Current (ID) | Internally limited | A |
| Reverse DC Output Current (IR) | -7 | A |
| Electrostatic Discharge (VESD) | 2000 | V |
| Total Dissipation at Tc = 25°C (Ptot) | 60 (DPAK/IPAK), 24 (ISOWATT220), 9 (SOT-82FM) | W |
| Operating Junction Temperature (Tj) | Internally limited | °C |
| Case Operating Temperature (Tc) | Internally limited | °C |
| Storage Temperature (Tstg) | -55 to 150 | °C |
| Thermal Resistance Junction-Case (Rthj-case) | 3.75 (DPAK/IPAK), 5.2 (ISOWATT220), 14 (SOT-82FM) | °C/W |
| Static Drain-Source On Resistance (RDS(on)) | 200-280 mΩ | mΩ |
| Drain-Source Clamp Voltage (VCLAMP) | 70 V | V |
| Current Limitation (ILIM) | 3.5-5 A | A |
Key Features
- Linear current limitation to protect against overcurrent conditions.
- Thermal shutdown to prevent overheating.
- Short circuit protection to safeguard against short circuits.
- Integrated clamp to handle overvoltage conditions.
- Low current drawn from the input pin.
- Diagnostic feedback through the input pin for fault detection.
- ESD protection according to the Human Body model.
- Direct access to the gate of the power MOSFET for analog driving.
- Compatibility with standard Power MOSFETs.
- Status feedback through the input pin in case of overtemperature faults.
Applications
The VND5N07 is primarily designed for automotive applications but can also be used in various other high-reliability environments. It is suitable for applications requiring robust and protected power switching, such as in automotive systems, industrial control, and other high-power electronic systems.
Q & A
- What is the VND5N07 designed for?
The VND5N07 is designed to replace standard Power MOSFETs in applications from DC to 50 kHz, particularly in automotive and high-reliability environments.
- What are the key protection features of the VND5N07?
The key protection features include linear current limitation, thermal shutdown, short circuit protection, and integrated overvoltage clamp.
- How does the VND5N07 provide diagnostic feedback?
The device provides diagnostic feedback through the input pin, which can be monitored to detect fault conditions such as overtemperature.
- What is the maximum drain current limit for the VND5N07?
The maximum drain current limit is typically 3.5-5 A.
- What is the thermal shutdown temperature for the VND5N07?
The thermal shutdown occurs at a minimum junction temperature of 150°C.
- Is the VND5N07 ESD protected?
Yes, the VND5N07 has ESD protection according to the Human Body model.
- Can the VND5N07 be driven by TTL logic?
Yes, the VND5N07 can be driven by TTL logic with a small increase in RDS(on).
- What are the typical packages available for the VND5N07?
The device is available in DPAK, IPAK, ISOWATT220, and SOT-82FM packages.
- What is the maximum storage temperature for the VND5N07?
The maximum storage temperature is 150°C, with a range of -55 to 150°C.
- How does the overtemperature reset work on the VND5N07?
The device automatically restarts when the chip temperature falls below 135°C after an overtemperature shutdown.
