Overview
The VNS3NV04DPTR-E is a highly integrated, fully autoprotected Power MOSFET device from STMicroelectronics. It consists of two monolithic OMNIFET II chips housed in a standard SO-8 package. This device is designed using STMicroelectronics' VIPower M0-3 technology and is intended for use in up to 50 kHz DC applications, making it an ideal replacement for standard Power MOSFETs in various automotive and industrial systems. The VNS3NV04DPTR-E is AEC-Q100 qualified and ECOPACK compliant, ensuring it meets stringent automotive and environmental standards.
Key Specifications
| Parameter | Min | Typ | Max | Unit |
|---|---|---|---|---|
| Drain-Source On Resistance (RDS(on)) | - | - | 120 mΩ | @ VIN = 5 V, ID = 1.5 A, Tj = 25 °C |
| Drain Current Limit (Ilim) | 3.5 A | 5 A | 7 A | @ VIN = 5 V, VDS = 13 V |
| Overtemperature Shutdown (Tjsh) | 150 °C | 175 °C | 200 °C | |
| Thermal Resistance Junction-Lead (Rthj-lead) | - | - | 30 °C/W | |
| Thermal Resistance Junction-Ambient (Rthj-amb) | - | - | 80 °C/W | When mounted on a standard single-sided FR4 board |
| Storage Temperature (Tstg) | -55 °C | - | 150 °C | |
| Input Threshold Voltage (VINTH) | 0.5 V | 2.5 V | - | @ VDS = VIN; ID = 1 mA |
| Drain-Source Clamp Voltage (VCLAMP) | 40 V | 45 V | 55 V | @ VIN = 0 V; ID = 1.5 A |
Key Features
- AEC-Q100 qualified and ECOPACK compliant, ensuring automotive and environmental standards are met.
- Linear current limitation and thermal shutdown for enhanced protection.
- Short-circuit protection and integrated clamp for robust operation.
- Low current drawn from the input pin and diagnostic feedback through the input pin.
- ESD protection and direct access to the gate of the Power MOSFET for analog driving.
- Compatible with standard Power MOSFETs, making it a suitable replacement in various applications.
Applications
The VNS3NV04DPTR-E is designed for use in automotive and industrial applications, particularly where high reliability and protection against harsh environments are required. It is suitable for use in power switching, motor control, and other high-current applications up to 50 kHz.
Q & A
- What is the package type of the VNS3NV04DPTR-E? The VNS3NV04DPTR-E is housed in a standard SO-8 package.
- What is the maximum drain current limit for the VNS3NV04DPTR-E? The maximum drain current limit is 7 A at VIN = 5 V and VDS = 13 V.
- What are the thermal shutdown limits for the VNS3NV04DPTR-E? The overtemperature shutdown limits are between 150 °C and 200 °C.
- Is the VNS3NV04DPTR-E AEC-Q100 qualified? Yes, the VNS3NV04DPTR-E is AEC-Q100 qualified.
- What is the typical drain-source on resistance (RDS(on)) of the VNS3NV04DPTR-E? The typical RDS(on) is 120 mΩ at VIN = 5 V, ID = 1.5 A, and Tj = 25 °C.
- Does the VNS3NV04DPTR-E have built-in protection features? Yes, it includes linear current limitation, thermal shutdown, short-circuit protection, and an integrated clamp.
- What is the storage temperature range for the VNS3NV04DPTR-E? The storage temperature range is -55 °C to 150 °C.
- How does the VNS3NV04DPTR-E provide diagnostic feedback? Diagnostic feedback is provided through the input pin.
- Is the VNS3NV04DPTR-E compatible with standard Power MOSFETs? Yes, it is compatible with standard Power MOSFETs.
- What is the typical input threshold voltage (VINTH) of the VNS3NV04DPTR-E? The typical VINTH is 2.5 V at VDS = VIN and ID = 1 mA.
