Overview
The VNS7NV04PTR-E is a fully autoprotected Power MOSFET designed by STMicroelectronics using their VIPower™ M0-3 Technology. This monolithic device is intended to replace standard Power MOSFETs in applications ranging from DC to 50 kHz. It integrates several protection features, including thermal shutdown, linear current limitation, short circuit protection, and an integrated clamp, making it robust and reliable in harsh environments.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Drain-source voltage (VDS) | Internally clamped | V |
Input voltage (VIN) | Internally clamped | V |
Drain current (ID) | Internally limited | A |
Reverse DC output current (IR) | -10.5 | A |
Electrostatic discharge (VESD1) | 4000 | V |
Electrostatic discharge on output pin only (VESD2) | 16500 | V |
Total dissipation at Tc = 25 °C (Ptot) | 4.6 | W |
Operating junction temperature (Tj) | Internally limited | °C |
Case operating temperature (Tc) | Internally limited | °C |
Storage temperature (Tstg) | -55 to 150 | °C |
RDS(on) | 60 mΩ | mΩ |
Current limit (Ilim) | 6 A | A |
Clamp voltage (Vclamp) | 40 V | V |
Package | SO-8 |
Key Features
- Linear current limitation to protect against overcurrent conditions.
- Thermal shutdown to prevent overheating.
- Short circuit protection to safeguard against short circuits.
- Integrated clamp to protect against overvoltage.
- Low current drawn from the input pin.
- Diagnostic feedback through the input pin to monitor fault conditions.
- ESD protection to withstand electrostatic discharges.
- Direct access to the gate of the Power MOSFET for analog driving.
- Compatibility with standard Power MOSFETs and compliance with the 2002/95/EC European Directive.
Applications
The VNS7NV04PTR-E is suitable for a variety of applications, including:
- Automotive systems: It can be used in automotive power management and control circuits due to its robust protection features and ability to handle harsh environments.
- Industrial control: Ideal for industrial control systems that require reliable and protected power switching.
- Power supplies: Can be used in power supply designs where high reliability and protection against faults are critical.
- Motor control: Suitable for motor control applications where the device's current limitation and thermal shutdown features are beneficial.
Q & A
- What is the maximum drain-source voltage (VDS) for the VNS7NV04PTR-E?
The drain-source voltage (VDS) is internally clamped, providing protection against overvoltage conditions.
- What is the typical on-resistance (RDS(on)) of the VNS7NV04PTR-E?
The typical on-resistance (RDS(on)) is 60 mΩ.
- What protection features does the VNS7NV04PTR-E include?
The device includes linear current limitation, thermal shutdown, short circuit protection, and an integrated clamp, among other features.
- What is the maximum operating junction temperature (Tj) for the VNS7NV04PTR-E?
The operating junction temperature (Tj) is internally limited, ensuring the device operates within safe temperature ranges.
- What is the storage temperature range for the VNS7NV04PTR-E?
The storage temperature range is -55 to 150 °C.
- What package types are available for the VNS7NV04PTR-E?
The device is available in SO-8 package.
- How does the VNS7NV04PTR-E provide diagnostic feedback?
The device provides diagnostic feedback through the input pin, allowing for the detection of fault conditions.
- What is the maximum input current (IIN) for the VNS7NV04PTR-E?
The maximum input current (IIN) is +/-20 mA.
- What is the typical forward transconductance (gfs) of the VNS7NV04PTR-E?
The typical forward transconductance (gfs) is 9 S at VDD = 13 V and ID = 3.5 A.
- What is the maximum switching energy (EMAX) for the VNS7NV04PTR-E?
The maximum switching energy (EMAX) is 40 mJ under specified test conditions.