Overview
The VNS1NV04DTR-E is a monolithic device designed by STMicroelectronics using their VIPower™ M0-3 Technology. This device is part of the OMNIFET II family and is intended to replace standard Power MOSFETs in applications ranging from DC to 50 KHz. It is housed in a standard SO-8 package and is particularly suited for automotive and other harsh environment applications. The device features built-in thermal shutdown, linear current limitation, and overvoltage clamp, ensuring robust protection against various fault conditions. Additionally, it provides diagnostic feedback through the input pin, enhancing system reliability and fault detection capabilities.
Key Specifications
Parameter | Value | Unit |
---|---|---|
Max On-state Resistance (RDS(ON)) | 250 mΩ | mΩ |
Current Limitation (ILIMH) | 1.7 A | A |
Drain-Source Clamp Voltage (VCLAMP) | 40 V | V |
Operating Junction Temperature (Tj) | -40 to 150 °C | °C |
Case Operating Temperature (Tc) | -40 to 150 °C | °C |
Storage Temperature (Tstg) | -55 to 150 °C | °C |
Total Dissipation at Tc = 25 °C (Ptot) | 4 W | W |
Rise Time (tr) | 170 ns | ns |
Fall Time (tf) | 200 ns | ns |
ESD Protection (VESD1) | 4000 V | V |
Key Features
- Linear current limitation
- Thermal shutdown
- Short circuit protection
- Integrated overvoltage clamp
- Low current drawn from input pin
- Diagnostic feedback through input pin
- ESD protection
- Direct access to the gate of the Power MOSFET (analog driving)
- Compatible with standard Power MOSFETs
- AEC-Q100 qualified for automotive use
Applications
The VNS1NV04DTR-E is designed for use in various automotive and industrial applications where robust and reliable power management is crucial. It is particularly suited for:
- Automotive systems requiring high reliability and protection against harsh environments.
- Motor control applications where high-speed switching and low thermal resistance are essential.
- Power management in industrial control systems, such as those found in robotics, HVAC, and other high-reliability applications.
Q & A
- What is the VNS1NV04DTR-E used for?
The VNS1NV04DTR-E is used as a replacement for standard Power MOSFETs in applications ranging from DC to 50 KHz, particularly in automotive and harsh environment settings.
- What package type does the VNS1NV04DTR-E come in?
The VNS1NV04DTR-E is housed in a standard SO-8 package.
- What are the key protection features of the VNS1NV04DTR-E?
The device features linear current limitation, thermal shutdown, short circuit protection, and an integrated overvoltage clamp.
- How does the VNS1NV04DTR-E provide diagnostic feedback?
Diagnostic feedback can be detected by monitoring the voltage at the input pin.
- What is the maximum on-state resistance of the VNS1NV04DTR-E?
The maximum on-state resistance (RDS(ON)) is 250 mΩ.
- What is the current limitation capability of the VNS1NV04DTR-E?
The current limitation (ILIMH) is typically 1.7 A.
- What is the drain-source clamp voltage of the VNS1NV04DTR-E?
The drain-source clamp voltage (VCLAMP) is 40 V.
- Is the VNS1NV04DTR-E qualified for automotive use?
Yes, the VNS1NV04DTR-E is AEC-Q100 qualified for automotive use.
- What are the operating temperature ranges for the VNS1NV04DTR-E?
The operating junction and case temperatures range from -40 to 150 °C.
- What is the total dissipation at Tc = 25 °C for the VNS1NV04DTR-E?
The total dissipation at Tc = 25 °C (Ptot) is 4 W.