TMBAT49FILM
  • Share:

STMicroelectronics TMBAT49FILM

Manufacturer No:
TMBAT49FILM
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 80V 500MA MELF
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TMBAT49FILM is a general-purpose metal to silicon Schottky diode produced by STMicroelectronics. This device is designed for a wide range of applications requiring low forward voltage drop and fast switching times. It features integrated protection against excessive voltage, such as electrostatic discharges, making it robust and reliable in various operating conditions.

Key Specifications

ParameterValueUnit
Repetitive Peak Reverse Voltage (VRRM)80V
Forward Continuous Current (IF)500mA
Repetitive Peak Forward Current (IFRM)3A
Surge Non-Repetitive Forward Current (IFSM)10A
Storage Temperature Range (Tstg)-65 to +150°C
Operating Junction Temperature Range (Tj)-65 to +125°C
Maximum Lead Soldering Temperature (TL)260°C
Forward Voltage Drop (VF) at IF = 10 mA0.32V
Reverse Leakage Current (IR) at VR = 80 V200µA
Diode Capacitance (C) at F = 1 MHz, VR = 0 V120pF

Key Features

  • Very low turn-on voltage, ensuring minimal voltage drop during operation.
  • Fast switching times, making it suitable for high-frequency applications.
  • Integrated protection against electrostatic discharges (ESD), enhancing device reliability.
  • Compact MELF (Metal Electrode Leadless Face) package, ideal for surface mount applications.
  • ECOPACK® compliant, meeting environmental standards.

Applications

The TMBAT49FILM Schottky diode is versatile and can be used in a variety of applications, including:

  • General-purpose rectification and switching circuits.
  • High-frequency applications due to its fast switching times.
  • Power supply circuits where low forward voltage drop is crucial.
  • Automotive and industrial electronics where robustness against ESD is necessary.

Q & A

  1. What is the maximum repetitive peak reverse voltage of the TMBAT49FILM?
    The maximum repetitive peak reverse voltage is 80 V.
  2. What is the forward continuous current rating of the TMBAT49FILM?
    The forward continuous current rating is 500 mA.
  3. What is the surge non-repetitive forward current rating of the TMBAT49FILM?
    The surge non-repetitive forward current rating is 10 A for a pulse duration of 10 ms.
  4. What is the storage temperature range for the TMBAT49FILM?
    The storage temperature range is -65 to +150 °C.
  5. What is the operating junction temperature range for the TMBAT49FILM?
    The operating junction temperature range is -65 to +125 °C.
  6. What type of package does the TMBAT49FILM come in?
    The TMBAT49FILM comes in a MELF (Metal Electrode Leadless Face) package.
  7. Does the TMBAT49FILM have built-in protection against electrostatic discharges?
    Yes, the TMBAT49FILM has integrated protection against excessive voltage such as electrostatic discharges.
  8. What is the typical forward voltage drop at 10 mA for the TMBAT49FILM?
    The typical forward voltage drop at 10 mA is 0.32 V.
  9. What is the reverse leakage current at 80 V for the TMBAT49FILM?
    The reverse leakage current at 80 V is 200 µA.
  10. Is the TMBAT49FILM ECOPACK® compliant?
    Yes, the TMBAT49FILM is ECOPACK® compliant, meeting environmental standards.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):80 V
Current - Average Rectified (Io):500mA (DC)
Voltage - Forward (Vf) (Max) @ If:420 mV @ 100 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:200 µA @ 80 V
Capacitance @ Vr, F:120pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-213AB, MELF
Supplier Device Package:MELF
Operating Temperature - Junction:-65°C ~ 125°C
0 Remaining View Similar

In Stock

$0.59
696

Please send RFQ , we will respond immediately.

Related Product By Categories

1N4148WS RRG
1N4148WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323F
1N4007-E3/53
1N4007-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO204AL
MBR10100F_T0_00001
MBR10100F_T0_00001
Panjit International Inc.
10 AMPERES SCHOTTKY BARRIER RECT
MURA160T3G
MURA160T3G
onsemi
DIODE GEN PURP 600V 1A SMA
FSV10100V
FSV10100V
onsemi
DIODE SCHOTTKY 100V 10A TO277-3
BAS16HT3G
BAS16HT3G
onsemi
DIODE GEN PURP 100V 200MA SOD323
STTH1R04U
STTH1R04U
STMicroelectronics
DIODE GEN PURP 400V 1A SMB
STPSC8H065DI
STPSC8H065DI
STMicroelectronics
DIODE SCHOTTKY 650V 8A TO220AC
BAS516-TP
BAS516-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD523
BAV21W-HE3-18
BAV21W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
MURS140-13
MURS140-13
Diodes Incorporated
DIODE GEN PURP 400V 1A SMB
1N4937GHR1G
1N4937GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL

Related Product By Brand

STTH1002CG
STTH1002CG
STMicroelectronics
DIODE ARRAY GP 200V 8A D2PAK
T405Q-600H
T405Q-600H
STMicroelectronics
TRIAC SENS GATE 600V 4A IPAK
STM32L496ZGT3
STM32L496ZGT3
STMicroelectronics
IC MCU 32BIT 1MB FLASH 144LQFP
STM32F100VDT6B
STM32F100VDT6B
STMicroelectronics
IC MCU 32BIT 384KB FLASH 100LQFP
STM32F401CCY6TR
STM32F401CCY6TR
STMicroelectronics
IC MCU 32BIT 256KB FLASH 49WLCSP
TL084IDT
TL084IDT
STMicroelectronics
IC OPAMP JFET 4 CIRCUIT 14SO
TSC2012IDT
TSC2012IDT
STMicroelectronics
IC CURRENT SENSE 1 CIRCUIT 8SOIC
M48Z02-70PC1
M48Z02-70PC1
STMicroelectronics
IC NVSRAM 16KBIT PAR 24PCDIP
M68AW512ML70ND6
M68AW512ML70ND6
STMicroelectronics
IC SRAM 8MBIT PARALLEL 44TSOP II
VNN3NV04PTR-E
VNN3NV04PTR-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 SOT223
L9301-TR
L9301-TR
STMicroelectronics
IC PWR DRIVER N-CHANNEL PWRSSO36
ST1S10PHR
ST1S10PHR
STMicroelectronics
IC REG BUCK ADJ 3A POWERSO-8