STTH4R02B-TR
  • Share:

STMicroelectronics STTH4R02B-TR

Manufacturer No:
STTH4R02B-TR
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 4A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH4R02B-TR is a high-efficiency ultrafast diode produced by STMicroelectronics. It utilizes ST's new 200 V planar Pt doping technology, making it particularly suited for switching mode base drive and transistor circuits. This device is packaged in a DPAK surface mount package and is designed for use in low voltage, high frequency inverters, freewheeling, and polarity protection applications.

Key Specifications

Parameter Value Unit
Reverse Voltage (VRRM) 200 V
Forward Current (IF(AV)) 4 A
Forward Voltage Drop (VF) at 4A 1.05 V
Reverse Recovery Time (trr) 16 - 30 ns ns
Operating Temperature Range -55 to 175 °C
Maximum Junction Temperature 175 °C
Package DPAK
RoHS Compliance Ecopack2

Key Features

  • Negligible switching losses
  • High junction temperature capability
  • Very low conduction losses
  • Low forward and reverse recovery times
  • ECOPACK®2 compliant component
  • Fast recovery time of 30 ns
  • High reverse voltage rating of 200V
  • Low forward voltage drop of 1.05V at 4A
  • Wide operating temperature range up to 175°C

Applications

  • Switching power supplies
  • AC/DC converters
  • Motor drives
  • Industrial electronics
  • Low voltage, high frequency inverters
  • Freewheeling and polarity protection

Q & A

  1. What is the reverse voltage rating of the STTH4R02B-TR?

    The reverse voltage rating of the STTH4R02B-TR is 200V.

  2. What is the maximum forward current of the STTH4R02B-TR?

    The maximum forward current of the STTH4R02B-TR is 4A.

  3. What is the typical forward voltage drop at 4A for the STTH4R02B-TR?

    The typical forward voltage drop at 4A for the STTH4R02B-TR is 1.05V.

  4. What is the reverse recovery time of the STTH4R02B-TR?

    The reverse recovery time of the STTH4R02B-TR is typically between 16 to 30 ns.

  5. What is the operating temperature range of the STTH4R02B-TR?

    The operating temperature range of the STTH4R02B-TR is from -55°C to 175°C.

  6. What package types are available for the STTH4R02B-TR?

    The STTH4R02B-TR is available in DPAK, SMB, and SMC packages.

  7. What are some typical applications of the STTH4R02B-TR?

    The STTH4R02B-TR is typically used in switching power supplies, AC/DC converters, motor drives, and industrial electronics.

  8. What is the maximum junction temperature of the STTH4R02B-TR?

    The maximum junction temperature of the STTH4R02B-TR is 175°C.

  9. Is the STTH4R02B-TR suitable for high-frequency applications?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:1.05 V @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:3 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$1.14
314

Please send RFQ , we will respond immediately.

Same Series
STTH4R02U
STTH4R02U
DIODE GEN PURP 200V 4A SMB
STTH4R02B-TR
STTH4R02B-TR
DIODE GEN PURP 200V 4A DPAK
STTH4R02
STTH4R02
DIODE GEN PURP 200V 4A DO201AB
STTH4R02RL
STTH4R02RL
DIODE GEN PURP 200V 4A DO201AB
STTH4R02D
STTH4R02D
DIODE GEN PURP 200V 4A TO220AC
STTH4R02FP
STTH4R02FP
DIODE GEN PURP 200V 4A TO220FP

Similar Products

Part Number STTH4R02B-TR STTH4R02BY-TR
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V
Current - Average Rectified (Io) 4A 4A
Voltage - Forward (Vf) (Max) @ If 1.05 V @ 4 A 1.05 V @ 4 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 30 ns
Current - Reverse Leakage @ Vr 3 µA @ 200 V 3 µA @ 200 V
Capacitance @ Vr, F - -
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK
Operating Temperature - Junction 175°C (Max) -40°C ~ 175°C

Related Product By Categories

NSR02F30NXT5G
NSR02F30NXT5G
onsemi
DIODE SCHOTTKY 30V 200MA 2DSN
MBRA120ET3G
MBRA120ET3G
onsemi
DIODE SCHOTTKY 20V 1A SMA
STPS1H100AF
STPS1H100AF
STMicroelectronics
DIODE SCHOTTKY 100V 1A SMAFLAT
NRVTSA4100ET3G
NRVTSA4100ET3G
onsemi
DIODE SCHOTTKY 100V 4A SMA
MUR840G
MUR840G
onsemi
DIODE GEN PURP 400V 8A TO220AC
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
BAS216,135
BAS216,135
NXP USA Inc.
DIODE GEN PURP 75V 250MA SOD2
BAT42WS-7
BAT42WS-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD323
BYC8B-600,118
BYC8B-600,118
WeEn Semiconductors
DIODE GEN PURP 500V 8A D2PAK
MUR120-E3/73
MUR120-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 1A DO204AC
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
BAS316-QF
BAS316-QF
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

SM6T24CAY
SM6T24CAY
STMicroelectronics
TVS DIODE 20.5VWM 42.8VC SMB
STPS0560Z
STPS0560Z
STMicroelectronics
DIODE SCHOTTKY 60V 500MA SOD123
STL76DN4LF7AG
STL76DN4LF7AG
STMicroelectronics
MOSFET 2N-CH 40V 40A PWRFLAT
STH410N4F7-6AG
STH410N4F7-6AG
STMicroelectronics
MOSFET N-CH 40V 200A H2PAK-6
STGP30H60DFB
STGP30H60DFB
STMicroelectronics
TRENCH GATE FIELD-STOP IGBT, HB
STA333BWJ13TR
STA333BWJ13TR
STMicroelectronics
IC FULLY INTEG PROC POWERSSO-36
LM239DT
LM239DT
STMicroelectronics
IC COMP QUAD LOW PWR 14SOIC
M68AW512ML70ND6
M68AW512ML70ND6
STMicroelectronics
IC SRAM 8MBIT PARALLEL 44TSOP II
L6235PD
L6235PD
STMicroelectronics
IC MOTOR DRVR 12V-52V 36POWERSO
VNQ810PTR-E
VNQ810PTR-E
STMicroelectronics
IC PWR DRIVER N-CHANNEL 1:1 28SO
LF90CPT-TR
LF90CPT-TR
STMicroelectronics
IC REG LINEAR 9V 500MA PPAK
LIS302DL
LIS302DL
STMicroelectronics
ACCEL 2.3-9.2G I2C/SPI 14LGA