STTH4R02B-TR
  • Share:

STMicroelectronics STTH4R02B-TR

Manufacturer No:
STTH4R02B-TR
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 4A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STTH4R02B-TR is a high-efficiency ultrafast diode produced by STMicroelectronics. It utilizes ST's new 200 V planar Pt doping technology, making it particularly suited for switching mode base drive and transistor circuits. This device is packaged in a DPAK surface mount package and is designed for use in low voltage, high frequency inverters, freewheeling, and polarity protection applications.

Key Specifications

Parameter Value Unit
Reverse Voltage (VRRM) 200 V
Forward Current (IF(AV)) 4 A
Forward Voltage Drop (VF) at 4A 1.05 V
Reverse Recovery Time (trr) 16 - 30 ns ns
Operating Temperature Range -55 to 175 °C
Maximum Junction Temperature 175 °C
Package DPAK
RoHS Compliance Ecopack2

Key Features

  • Negligible switching losses
  • High junction temperature capability
  • Very low conduction losses
  • Low forward and reverse recovery times
  • ECOPACK®2 compliant component
  • Fast recovery time of 30 ns
  • High reverse voltage rating of 200V
  • Low forward voltage drop of 1.05V at 4A
  • Wide operating temperature range up to 175°C

Applications

  • Switching power supplies
  • AC/DC converters
  • Motor drives
  • Industrial electronics
  • Low voltage, high frequency inverters
  • Freewheeling and polarity protection

Q & A

  1. What is the reverse voltage rating of the STTH4R02B-TR?

    The reverse voltage rating of the STTH4R02B-TR is 200V.

  2. What is the maximum forward current of the STTH4R02B-TR?

    The maximum forward current of the STTH4R02B-TR is 4A.

  3. What is the typical forward voltage drop at 4A for the STTH4R02B-TR?

    The typical forward voltage drop at 4A for the STTH4R02B-TR is 1.05V.

  4. What is the reverse recovery time of the STTH4R02B-TR?

    The reverse recovery time of the STTH4R02B-TR is typically between 16 to 30 ns.

  5. What is the operating temperature range of the STTH4R02B-TR?

    The operating temperature range of the STTH4R02B-TR is from -55°C to 175°C.

  6. What package types are available for the STTH4R02B-TR?

    The STTH4R02B-TR is available in DPAK, SMB, and SMC packages.

  7. What are some typical applications of the STTH4R02B-TR?

    The STTH4R02B-TR is typically used in switching power supplies, AC/DC converters, motor drives, and industrial electronics.

  8. What is the maximum junction temperature of the STTH4R02B-TR?

    The maximum junction temperature of the STTH4R02B-TR is 175°C.

  9. Is the STTH4R02B-TR suitable for high-frequency applications?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:1.05 V @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:3 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$1.14
314

Please send RFQ , we will respond immediately.

Same Series
STTH4R02U
STTH4R02U
DIODE GEN PURP 200V 4A SMB
STTH4R02B-TR
STTH4R02B-TR
DIODE GEN PURP 200V 4A DPAK
STTH4R02
STTH4R02
DIODE GEN PURP 200V 4A DO201AB
STTH4R02RL
STTH4R02RL
DIODE GEN PURP 200V 4A DO201AB
STTH4R02D
STTH4R02D
DIODE GEN PURP 200V 4A TO220AC
STTH4R02FP
STTH4R02FP
DIODE GEN PURP 200V 4A TO220FP

Similar Products

Part Number STTH4R02B-TR STTH4R02BY-TR
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 200 V
Current - Average Rectified (Io) 4A 4A
Voltage - Forward (Vf) (Max) @ If 1.05 V @ 4 A 1.05 V @ 4 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 30 ns 30 ns
Current - Reverse Leakage @ Vr 3 µA @ 200 V 3 µA @ 200 V
Capacitance @ Vr, F - -
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK
Operating Temperature - Junction 175°C (Max) -40°C ~ 175°C

Related Product By Categories

BAT54TS_R1_00001
BAT54TS_R1_00001
Panjit International Inc.
SOD-523, SKY
STTH1R02RL
STTH1R02RL
STMicroelectronics
DIODE GEN PURP 200V 1.5A DO41
STPS1L60ZF
STPS1L60ZF
STMicroelectronics
DIODE SCHOTTKY 60V 1A SOD123F
SMMSD103T1G
SMMSD103T1G
onsemi
DIODE GEN PURP 250V 200MA SOD123
1N4937GP-E3/54
1N4937GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
MBRD835LG
MBRD835LG
onsemi
DIODE SCHOTTKY 35V 8A DPAK
SBAS20HT1G
SBAS20HT1G
onsemi
DIODE GEN PURP 200V 200MA SOD323
BAV199/ZL215
BAV199/ZL215
Nexperia USA Inc.
BAV199W - RECTIFIER DIODE
BAT42-TAP
BAT42-TAP
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA DO35
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
MUR440G
MUR440G
onsemi
DIODE GEN PURP 400V 4A DO201AD
FSV530AF
FSV530AF
onsemi
DIODE SCHOTTKY 30V 5A SMAF

Related Product By Brand

NUCLEO-F303RE
NUCLEO-F303RE
STMicroelectronics
NUCLEO-64 STM32F303RE EVAL BRD
BD678A
BD678A
STMicroelectronics
TRANS PNP DARL 60V 4A SOT32-3
STD10NF10T4
STD10NF10T4
STMicroelectronics
MOSFET N-CH 100V 13A DPAK
STM32F407VGT6TR
STM32F407VGT6TR
STMicroelectronics
IC MCU 32BIT 1MB FLASH 100LQFP
STM32F103T6U6A
STM32F103T6U6A
STMicroelectronics
IC MCU 32BIT 32KB FLASH 36VFQFPN
STM32L496VET6
STM32L496VET6
STMicroelectronics
IC MCU 32BIT 512KB FLASH 100LQFP
STM32H755ZIT6U
STM32H755ZIT6U
STMicroelectronics
IC MCU 32BIT 2MB FLASH 144LQFP
E-L9637D
E-L9637D
STMicroelectronics
IC TRANSCEIVER 1/1 8SO
M95512-WMN6P
M95512-WMN6P
STMicroelectronics
IC EEPROM 512KBIT SPI 16MHZ 8SO
M24C02-WMN6
M24C02-WMN6
STMicroelectronics
IC EEPROM 2KBIT I2C 400KHZ 8SO
M24C04-WMN6
M24C04-WMN6
STMicroelectronics
IC EEPROM 4KBIT I2C 400KHZ 8SO
TDA7708LTR
TDA7708LTR
STMicroelectronics
ADD INFOTAINMENT