Overview
The BDW93CFP is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration, manufactured by STMicroelectronics. It is housed in a TO-220FP fully molded insulated package, making it suitable for high-power linear and switching applications. This transistor is designed to provide robust performance, handling high current and voltage levels effectively. The BDW93CFP has a complementary PNP type, the BDW94CFP, which together offer a comprehensive solution for various power amplification and switching needs.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Base Voltage (IE = 0) | 100 | V |
| Collector-Emitter Voltage (IB = 0) | 100 | V |
| Collector Current | 12 | A |
| Collector Peak Current | 15 | A |
| Base Current | 0.2 | A |
| Total Dissipation at Tc ≤ 25 oC | 33 | W |
| Storage Temperature | -65 to 150 | oC |
| Max. Operating Junction Temperature | 150 | oC |
| Thermal Resistance Junction-case | 3.8 | oC/W |
| Collector Cut-off Current (IE = 0) | 100 µA (Tcase = 25 oC), 5 mA (Tcase = 150 oC) | |
| Collector-Emitter Saturation Voltage | 2 V (IC = 5 A, IB = 20 mA), 3 V (IC = 10 A, IB = 100 mA) | |
| Base-Emitter Saturation Voltage | 2.5 V (IC = 5 A, IB = 20 mA), 4 V (IC = 10 A, IB = 100 mA) | |
| DC Current Gain | 1000 (IC = 3 A, VCE = 3 V), 750 (IC = 5 A, VCE = 3 V), 100 (IC = 10 A, VCE = 3 V) |
Key Features
- Monolithic Darlington configuration for high current gain.
- Mounted in TO-220FP fully molded insulated package.
- Integrated antiparallel collector-emitter diode.
- 2000 V DC insulation (U.L. compliant).
- High collector current and peak current handling (12 A and 15 A respectively).
- Low collector-emitter saturation voltage and base-emitter saturation voltage.
- High DC current gain.
Applications
- Linear and switching industrial equipment.
- High-power amplifier applications.
- Switching applications requiring robust performance.
Q & A
- Q: What is the primary application of the BDW93CFP transistor?
A: The BDW93CFP is primarily designed for high-power amplifier and switching applications.
- Q: What is the collector current rating of the BDW93CFP?
A: The collector current rating is 12 A, with a peak current of 15 A.
- Q: What is the maximum operating junction temperature for the BDW93CFP?
A: The maximum operating junction temperature is 150 oC.
- Q: Is the BDW93CFP suitable for high-frequency applications?
A: The BDW93CFP is primarily designed for high-power applications rather than high-frequency operations.
- Q: What is the package type of the BDW93CFP?
A: The BDW93CFP is housed in a TO-220FP fully molded insulated package.
- Q: Does the BDW93CFP have a complementary PNP type?
A: Yes, the complementary PNP type is the BDW94CFP.
- Q: What is the thermal resistance junction-case for the BDW93CFP?
A: The thermal resistance junction-case is 3.8 oC/W.
- Q: Is the BDW93CFP RoHS compliant?
A: Yes, the BDW93CFP is RoHS compliant.
- Q: What are the storage temperature limits for the BDW93CFP?
A: The storage temperature range is -65 to 150 oC.
- Q: What is the collector-emitter saturation voltage for the BDW93CFP?
A: The collector-emitter saturation voltage is typically 2 V (IC = 5 A, IB = 20 mA) and 3 V (IC = 10 A, IB = 100 mA).
