TIP115TU
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Fairchild Semiconductor TIP115TU

Manufacturer No:
TIP115TU
Manufacturer:
Fairchild Semiconductor
Package:
Tube
Description:
TRANS PNP DARL 60V 2A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TIP115TU is a PNP Epitaxial Silicon Darlington Transistor manufactured by Fairchild Semiconductor, now part of ON Semiconductor. This transistor is designed for general-purpose amplifier and low-speed switching applications. It features a monolithic construction with built-in base-emitter shunt resistors, making it suitable for a variety of industrial uses.

Key Specifications

Parameter Value Unit
Collector-Base Voltage (VCBO) -60 V
Collector-Emitter Voltage (VCEO) -60 V
Emitter-Base Voltage (VEBO) -5 V
Collector Current (DC) (IC) -2 A
Collector Current (Pulse) (ICP) -4 A
Base Current (DC) (IB) -50 mA
Junction Temperature (TJ) 150 °C
Storage Temperature Range (TSTG) -65 to 150 °C
Collector Dissipation (TA = 25°C) (PC) 2 W
DC Current Gain (hFE) 1000 @ VCE = -4 V, IC = -1 A
Collector-Emitter Saturation Voltage (VCE(sat)) -2.5 V @ IC = -2 A, IB = -8 mA
Base-Emitter On Voltage (VBE(on)) -2.8 V @ VCE = -4 V, IC = -2 A
Output Capacitance (Cob) 200 pF @ VCB = -10 V, IE = 0, f = 0.1 MHz

Key Features

  • Monolithic construction with built-in base-emitter shunt resistors
  • High DC current gain: hFE = 1000 @ VCE = -4 V, IC = -1 A (Minimum)
  • Low collector-emitter saturation voltage: VCE(sat) = -2.5 V @ IC = -2 A, IB = -8 mA
  • Industrial use
  • Complementary to TIP110 / TIP111 / TIP112
  • Pb-free packages available

Applications

The TIP115TU is suitable for various applications, including:

  • General-purpose amplifiers
  • Low-speed switching applications
  • Industrial control systems
  • Power supplies and power management systems
  • Automotive and consumer electronics

Q & A

  1. What is the maximum collector-emitter voltage for the TIP115TU?

    The maximum collector-emitter voltage (VCEO) for the TIP115TU is -60 V.

  2. What is the DC current gain of the TIP115TU?

    The DC current gain (hFE) of the TIP115TU is 1000 at VCE = -4 V and IC = -1 A.

  3. What is the collector-emitter saturation voltage of the TIP115TU?

    The collector-emitter saturation voltage (VCE(sat)) of the TIP115TU is -2.5 V at IC = -2 A and IB = -8 mA.

  4. What is the junction temperature range for the TIP115TU?

    The junction temperature (TJ) range for the TIP115TU is up to 150°C.

  5. Is the TIP115TU available in Pb-free packages?
  6. What are the typical applications of the TIP115TU?

    The TIP115TU is typically used in general-purpose amplifiers, low-speed switching applications, industrial control systems, power supplies, and automotive and consumer electronics.

  7. What is the maximum collector current for the TIP115TU?

    The maximum collector current (IC) for the TIP115TU is -2 A.

  8. What is the base-emitter on voltage for the TIP115TU?

    The base-emitter on voltage (VBE(on)) for the TIP115TU is -2.8 V at VCE = -4 V and IC = -2 A.

  9. What is the output capacitance of the TIP115TU?

    The output capacitance (Cob) of the TIP115TU is 200 pF at VCB = -10 V, IE = 0, and f = 0.1 MHz.

  10. What is the storage temperature range for the TIP115TU?

    The storage temperature range (TSTG) for the TIP115TU is -65 to 150°C.

Product Attributes

Transistor Type:PNP - Darlington
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 8mA, 2A
Current - Collector Cutoff (Max):2mA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 1A, 4V
Power - Max:2 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
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In Stock

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Same Series
TIP117TU
TIP117TU
TRANS PNP DARL 100V 2A TO220-3
TIP116TU
TIP116TU
TRANS PNP DARL 80V 2A TO220-3

Similar Products

Part Number TIP115TU TIP116TU TIP125TU TIP105TU TIP110TU TIP111TU TIP112TU
Manufacturer Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi onsemi Fairchild Semiconductor onsemi
Product Status Obsolete Obsolete Active Obsolete Obsolete Active Obsolete
Transistor Type PNP - Darlington PNP - Darlington PNP - Darlington PNP - Darlington NPN - Darlington NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 2 A 2 A 5 A 8 A 2 A 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 60 V 60 V 60 V 80 V 100 V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A 4V @ 20mA, 5A 2.5V @ 80mA, 8A 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max) 2mA 2mA 2mA 50µA 2mA 2mA 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 1A, 4V 1000 @ 1A, 4V 1000 @ 3A, 3V 1000 @ 3A, 4V 1000 @ 1A, 4V 1000 @ 1A, 4V 1000 @ 1A, 4V
Power - Max 2 W 2 W 2 W 2 W 2 W 2 W 2 W
Frequency - Transition - - - - - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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