Overview
The TIP117TU is a PNP Epitaxial Silicon Darlington Transistor produced by ON Semiconductor. This transistor is designed for general-purpose amplifier and low-speed switching applications. It features a monolithic construction with built-in base-emitter shunt resistors, making it suitable for a variety of industrial uses.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Base Voltage (VCBO) | -100 | V |
| Collector-Emitter Voltage (VCEO) | -100 | V |
| Emitter-Base Voltage (VEBO) | -5 | V |
| Collector Current (DC) (IC) | -2 | A |
| Collector Current (Pulse) (ICP) | -4 | A |
| Base Current (DC) (IB) | -50 | mA |
| Junction Temperature (TJ) | 150 | °C |
| Storage Temperature Range (TSTG) | -65 to 150 | °C |
| Collector Dissipation (TA = 25°C) (PC) | 2 | W |
| Collector Dissipation (TC = 25°C) (PC) | 50 | W |
| DC Current Gain (hFE) | 1000 @ VCE = -4 V, IC = -1 A | |
| Collector-Emitter Saturation Voltage (VCE(sat)) | -2.5 @ IC = -2 A, IB = -8 mA | V |
| Base-Emitter On Voltage (VBE(on)) | -2.8 @ VCE = -4 V, IC = -2 A | V |
| Output Capacitance (Cob) | 200 @ VCB = -10 V, IE = 0, f = 0.1 MHz | pF |
Key Features
- Monolithic construction with built-in base-emitter shunt resistors.
- High DC current gain: hFE = 1000 @ VCE = -4 V, IC = -1 A (Minimum).
- Low collector-emitter saturation voltage: VCE(sat) = -2.5 V @ IC = -2 A, IB = -8 mA.
- Suitable for industrial use.
- Complementary to TIP110 / TIP111 / TIP112.
Applications
The TIP117TU is designed for general-purpose amplifier and low-speed switching applications. It is particularly useful in industrial settings where high current gain and low saturation voltage are required. Typical applications include power amplifiers, motor control circuits, and other low-speed switching applications.
Q & A
- What is the TIP117TU transistor used for?
The TIP117TU is used for general-purpose amplifier and low-speed switching applications. - What is the maximum collector current of the TIP117TU?
The maximum collector current (DC) is -2 A. - What is the maximum junction temperature for the TIP117TU?
The maximum junction temperature is 150°C. - What is the typical DC current gain of the TIP117TU?
The typical DC current gain (hFE) is 1000 @ VCE = -4 V, IC = -1 A. - What is the collector-emitter saturation voltage of the TIP117TU?
The collector-emitter saturation voltage (VCE(sat)) is -2.5 V @ IC = -2 A, IB = -8 mA. - Is the TIP117TU suitable for high-speed applications?
No, the TIP117TU is designed for low-speed switching applications. - What is the storage temperature range for the TIP117TU?
The storage temperature range is -65 to 150°C. - What is the output capacitance of the TIP117TU?
The output capacitance (Cob) is 200 pF @ VCB = -10 V, IE = 0, f = 0.1 MHz. - Is the TIP117TU available in Pb-free packages?
Yes, Pb-free packages are available for the TIP117TU. - What are the complementary transistors to the TIP117TU?
The TIP117TU is complementary to TIP110 / TIP111 / TIP112.
