MUR8100E
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Harris Corporation MUR8100E

Manufacturer No:
MUR8100E
Manufacturer:
Harris Corporation
Package:
Bulk
Description:
RECTIFIER, AVALANCHE, 8A, 1000V,
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR8100E is an ultrafast power rectifier diode designed and manufactured by onsemi, a company that has its roots in Harris Corporation. This device is part of the Ultrafast "E" Series and is optimized for high-performance applications in switching power supplies, inverters, and as free-wheeling diodes.

Key Specifications

CharacteristicSymbolValueUnit
Peak Repetitive Reverse VoltageVRRM1000V
Working Peak Reverse VoltageVRWM1000V
DC Blocking VoltageVR1000V
Average Rectified Forward Current (Rated VR, TC = 150°C)IF(AV)8.0A
Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 150°C)IFM16A
Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)IFSM100A
Operating Junction and Storage Temperature RangeTJ, Tstg−65 to +175°C
Maximum Thermal Resistance, Junction-to-CaseRJC2.0°C/W
Maximum Instantaneous Forward Voltage (iF = 8.0 A, TC = 150°C)vF1.5V
Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/μs)trr75ns
Controlled Avalanche EnergyWAVAL20mJ

Key Features

  • Ultrafast 75 nanosecond recovery time
  • High reverse energy capability with 20 mJ avalanche energy guaranteed
  • Excellent protection against voltage transients in switching inductive load circuits
  • Low forward voltage and low leakage current
  • High temperature glass passivated junction
  • Operating junction temperature up to 175°C
  • Popular TO-220 package with epoxy meeting UL 94 V-0 @ 0.125 in.
  • Pb-free packages available

Applications

The MUR8100E is designed for use in various high-performance applications, including:

  • Switching power supplies
  • Inverters
  • Free-wheeling diodes
  • Clamping diodes in inductive load circuits

Q & A

  1. What is the peak repetitive reverse voltage of the MUR8100E?
    The peak repetitive reverse voltage (VRRM) of the MUR8100E is 1000 V.
  2. What is the average rectified forward current rating of the MUR8100E at 150°C case temperature?
    The average rectified forward current (IF(AV)) is 8.0 A.
  3. What is the maximum thermal resistance, junction-to-case, for the MUR8100E?
    The maximum thermal resistance, junction-to-case (RJC), is 2.0 °C/W.
  4. What is the recovery time of the MUR8100E?
    The reverse recovery time (trr) is 75 nanoseconds.
  5. What is the controlled avalanche energy of the MUR8100E?
    The controlled avalanche energy (WAVAL) is 20 mJ.
  6. What package type is the MUR8100E available in?
    The MUR8100E is available in the TO-220 package.
  7. Is the MUR8100E Pb-free?
    Yes, Pb-free packages are available for the MUR8100E.
  8. What is the operating junction temperature range of the MUR8100E?
    The operating junction temperature range is −65 to +175 °C.
  9. What are some common applications of the MUR8100E?
    The MUR8100E is commonly used in switching power supplies, inverters, and as free-wheeling and clamping diodes.
  10. What is the maximum instantaneous forward voltage of the MUR8100E at 8.0 A and 150°C case temperature?
    The maximum instantaneous forward voltage (vF) is 1.5 V.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.8 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):100 ns
Current - Reverse Leakage @ Vr:25 µA @ 1000 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220-2
Operating Temperature - Junction:-65°C ~ 175°C
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Similar Products

Part Number MUR8100E MURH8100E MUR8100EG MUR8100EH
Manufacturer Harris Corporation onsemi onsemi onsemi
Product Status Active Active Active Obsolete
Diode Type Standard - Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V - 1000 V 1000 V
Current - Average Rectified (Io) 8A - 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 8 A - 1.8 V @ 8 A 1.8 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) - Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 100 ns - 100 ns 100 ns
Current - Reverse Leakage @ Vr 25 µA @ 1000 V - 25 µA @ 1000 V 25 µA @ 1000 V
Capacitance @ Vr, F - - - -
Mounting Type Through Hole - Through Hole Through Hole
Package / Case TO-220-2 - TO-220-2 TO-220-2
Supplier Device Package TO-220-2 - TO-220-2 TO-220-2
Operating Temperature - Junction -65°C ~ 175°C - -65°C ~ 175°C -65°C ~ 175°C

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