MUR8100EH
  • Share:

onsemi MUR8100EH

Manufacturer No:
MUR8100EH
Manufacturer:
onsemi
Package:
Tray
Description:
DIODE GEN PURPOSE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR8100EH is a high-performance, ultrafast recovery rectifier from onsemi, part of the 'E' series known for its high reverse energy capability. This device is specifically designed for applications in switching power supplies, inverters, and as free-wheeling diodes. It offers superior characteristics that make it an ideal choice for demanding power management scenarios.

Key Specifications

Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 1000 V
Average Rectified Forward Current (Rated VR, TC = 150°C) IF(AV) 8.0 A
Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 150°C) IFM 16 A
Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 100 A
Operating Junction and Storage Temperature Range TJ, Tstg −65 to +175 °C
Maximum Instantaneous Forward Voltage (iF = 8.0 A, TC = 150°C) vF 1.5 V
Maximum Reverse Recovery Time trr 75 ns
Controlled Avalanche Energy WAVAL 20 mJ
Package Type TO−220

Key Features

  • Ultrafast 75 nanosecond recovery time, ensuring minimal switching losses.
  • 20 mJ avalanche energy guaranteed, providing excellent protection against voltage transients in switching inductive load circuits.
  • High operating junction temperature of up to 175°C, suitable for high-temperature applications.
  • Epoxy meets UL 94 V-0 @ 0.125 in., ensuring high safety standards.
  • Low forward voltage and low leakage current, enhancing overall efficiency.
  • High temperature glass passivated junction for reliability and durability.
  • Reverse voltage capability up to 1000 V, making it suitable for high-voltage applications.
  • Pb-free packages available, aligning with environmental regulations.

Applications

  • Switching power supplies: Ideal for high-efficiency power conversion.
  • Inverters: Suitable for applications requiring high-frequency switching.
  • Free-wheeling diodes: Used in circuits where rapid recovery is crucial.
  • Inductive load circuits: Provides protection against voltage transients.
  • High-temperature environments: Suitable for applications where the operating temperature is high.

Q & A

  1. What is the maximum reverse voltage of the MUR8100EH?

    The maximum reverse voltage (VRRM) of the MUR8100EH is 1000 V.

  2. What is the average rectified forward current rating of the MUR8100EH?

    The average rectified forward current (IF(AV)) is rated at 8.0 A at a case temperature of 150°C.

  3. What is the recovery time of the MUR8100EH?

    The MUR8100EH has an ultrafast recovery time of 75 nanoseconds.

  4. What is the maximum operating junction temperature of the MUR8100EH?

    The maximum operating junction temperature is 175°C.

  5. What type of package does the MUR8100EH come in?

    The MUR8100EH is available in the TO−220 package.

  6. Does the MUR8100EH meet any specific safety standards?

    Yes, the epoxy used in the MUR8100EH meets UL 94 V-0 @ 0.125 in..

  7. What is the controlled avalanche energy of the MUR8100EH?

    The controlled avalanche energy is guaranteed at 20 mJ.

  8. Is the MUR8100EH available in Pb-free packages?

    Yes, Pb-free packages are available for the MUR8100EH.

  9. What are the typical applications of the MUR8100EH?

    The MUR8100EH is typically used in switching power supplies, inverters, and as free-wheeling diodes.

  10. What are the benefits of the low forward voltage and low leakage current in the MUR8100EH?

    The low forward voltage and low leakage current enhance the overall efficiency and reduce power losses in the circuit.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.8 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):100 ns
Current - Reverse Leakage @ Vr:25 µA @ 1000 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220-2
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
71

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE2X/AA
RD15S10HE2X/AA
CONN D-SUB RCPT 15POS CRIMP
RD15S10HT20/AA
RD15S10HT20/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S200TS
DD15S200TS
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE0/AA
RD15S10HE0/AA
CONN D-SUB RCPT 15POS CRIMP
RD15S10HE30/AA
RD15S10HE30/AA
CONN D-SUB RCPT 15POS CRIMP
DD44S32S60T20
DD44S32S60T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD26M20HE20/AA
DD26M20HE20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20JT2S/AA
DD15S20JT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0T20
DD26S2S0T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE0/AA
DD26S10HE0/AA
CONN D-SUB HD RCPT 26POS CRIMP
CBC46W4S1000S
CBC46W4S1000S
CONN D-SUB RCPT 46POS CRIMP
DD44S32S60T2X
DD44S32S60T2X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number MUR8100EH MUR8100E MUR8100EG
Manufacturer onsemi Harris Corporation onsemi
Product Status Obsolete Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 1000 V
Current - Average Rectified (Io) 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 8 A 1.8 V @ 8 A 1.8 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 100 ns 100 ns 100 ns
Current - Reverse Leakage @ Vr 25 µA @ 1000 V 25 µA @ 1000 V 25 µA @ 1000 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2
Supplier Device Package TO-220-2 TO-220-2 TO-220-2
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
PMEG2015EPK,315
PMEG2015EPK,315
NXP USA Inc.
NOW NEXPERIA PMEG2015EPK - RECTI
MUR180EG
MUR180EG
onsemi
DIODE GEN PURP 800V 1A AXIAL
STPS1L60ZF
STPS1L60ZF
STMicroelectronics
DIODE SCHOTTKY 60V 1A SOD123F
NRVTSA4100ET3G
NRVTSA4100ET3G
onsemi
DIODE SCHOTTKY 100V 4A SMA
STTH5L06B-TR
STTH5L06B-TR
STMicroelectronics
DIODE GEN PURP 600V 5A DPAK
BAV199/ZL215
BAV199/ZL215
Nexperia USA Inc.
BAV199W - RECTIFIER DIODE
BAS40WQ-7-F
BAS40WQ-7-F
Diodes Incorporated
SCHOTTKY DIODE SOT323 T&R 3K
PMEG6020ELR-QX
PMEG6020ELR-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BAS21_D87Z
BAS21_D87Z
onsemi
DIODE GEN PURP 250V 200MA SOT23
STPS8L30B
STPS8L30B
STMicroelectronics
DIODE SCHOTTKY 30V 8A DPAK
STTH30L06G
STTH30L06G
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK

Related Product By Brand

1SMA5942BT3G
1SMA5942BT3G
onsemi
DIODE ZENER 51V 1.5W SMA
MMBTA55LT1G
MMBTA55LT1G
onsemi
TRANS PNP 60V 0.5A SOT23-3
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
2N3773G
2N3773G
onsemi
TRANS NPN 140V 16A TO204
LM301ADR2G
LM301ADR2G
onsemi
IC OPAMP GP 1 CIRCUIT 8SOIC
NCV33274ADR2G
NCV33274ADR2G
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
NCS29001DR2G
NCS29001DR2G
onsemi
IC LED DRIVER CTRLR PWM 14SOIC
LM2931CTG
LM2931CTG
onsemi
IC REG LIN POS ADJ 100MA TO220-5
NCP705MTADJTCG
NCP705MTADJTCG
onsemi
IC REG LIN POS ADJ 500MA 6WDFN
NCP177AMX330TCG
NCP177AMX330TCG
onsemi
IC REG LINEAR 3.3V 500MA 4XDFN
NCV4276CDS50R4G
NCV4276CDS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK-5