MUR8100EH
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onsemi MUR8100EH

Manufacturer No:
MUR8100EH
Manufacturer:
onsemi
Package:
Tray
Description:
DIODE GEN PURPOSE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR8100EH is a high-performance, ultrafast recovery rectifier from onsemi, part of the 'E' series known for its high reverse energy capability. This device is specifically designed for applications in switching power supplies, inverters, and as free-wheeling diodes. It offers superior characteristics that make it an ideal choice for demanding power management scenarios.

Key Specifications

Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 1000 V
Average Rectified Forward Current (Rated VR, TC = 150°C) IF(AV) 8.0 A
Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 150°C) IFM 16 A
Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 100 A
Operating Junction and Storage Temperature Range TJ, Tstg −65 to +175 °C
Maximum Instantaneous Forward Voltage (iF = 8.0 A, TC = 150°C) vF 1.5 V
Maximum Reverse Recovery Time trr 75 ns
Controlled Avalanche Energy WAVAL 20 mJ
Package Type TO−220

Key Features

  • Ultrafast 75 nanosecond recovery time, ensuring minimal switching losses.
  • 20 mJ avalanche energy guaranteed, providing excellent protection against voltage transients in switching inductive load circuits.
  • High operating junction temperature of up to 175°C, suitable for high-temperature applications.
  • Epoxy meets UL 94 V-0 @ 0.125 in., ensuring high safety standards.
  • Low forward voltage and low leakage current, enhancing overall efficiency.
  • High temperature glass passivated junction for reliability and durability.
  • Reverse voltage capability up to 1000 V, making it suitable for high-voltage applications.
  • Pb-free packages available, aligning with environmental regulations.

Applications

  • Switching power supplies: Ideal for high-efficiency power conversion.
  • Inverters: Suitable for applications requiring high-frequency switching.
  • Free-wheeling diodes: Used in circuits where rapid recovery is crucial.
  • Inductive load circuits: Provides protection against voltage transients.
  • High-temperature environments: Suitable for applications where the operating temperature is high.

Q & A

  1. What is the maximum reverse voltage of the MUR8100EH?

    The maximum reverse voltage (VRRM) of the MUR8100EH is 1000 V.

  2. What is the average rectified forward current rating of the MUR8100EH?

    The average rectified forward current (IF(AV)) is rated at 8.0 A at a case temperature of 150°C.

  3. What is the recovery time of the MUR8100EH?

    The MUR8100EH has an ultrafast recovery time of 75 nanoseconds.

  4. What is the maximum operating junction temperature of the MUR8100EH?

    The maximum operating junction temperature is 175°C.

  5. What type of package does the MUR8100EH come in?

    The MUR8100EH is available in the TO−220 package.

  6. Does the MUR8100EH meet any specific safety standards?

    Yes, the epoxy used in the MUR8100EH meets UL 94 V-0 @ 0.125 in..

  7. What is the controlled avalanche energy of the MUR8100EH?

    The controlled avalanche energy is guaranteed at 20 mJ.

  8. Is the MUR8100EH available in Pb-free packages?

    Yes, Pb-free packages are available for the MUR8100EH.

  9. What are the typical applications of the MUR8100EH?

    The MUR8100EH is typically used in switching power supplies, inverters, and as free-wheeling diodes.

  10. What are the benefits of the low forward voltage and low leakage current in the MUR8100EH?

    The low forward voltage and low leakage current enhance the overall efficiency and reduce power losses in the circuit.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1000 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.8 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):100 ns
Current - Reverse Leakage @ Vr:25 µA @ 1000 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220-2
Operating Temperature - Junction:-65°C ~ 175°C
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Similar Products

Part Number MUR8100EH MUR8100E MUR8100EG
Manufacturer onsemi Harris Corporation onsemi
Product Status Obsolete Active Active
Diode Type Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1000 V 1000 V 1000 V
Current - Average Rectified (Io) 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 8 A 1.8 V @ 8 A 1.8 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 100 ns 100 ns 100 ns
Current - Reverse Leakage @ Vr 25 µA @ 1000 V 25 µA @ 1000 V 25 µA @ 1000 V
Capacitance @ Vr, F - - -
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 TO-220-2
Supplier Device Package TO-220-2 TO-220-2 TO-220-2
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

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