Overview
The MUR8100EG is a high-performance ultrafast recovery rectifier diode produced by onsemi. It is part of the Ultrafast ‘E’ Series, known for its high reverse energy capability and suitability for demanding applications such as switching power supplies, inverters, and free-wheeling diodes. This diode is designed to handle high voltage and current requirements while providing excellent protection against voltage transients and high temperature operation.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Maximum DC Reverse Voltage (VRRM) | 1000 | V |
| Average Rectified Forward Current (IF(AV)) | 8.0 | A |
| Peak Repetitive Forward Current (IFM) | 16 | A |
| Non-Repetitive Peak Surge Current (IFSM) | 100 | A |
| Maximum Instantaneous Forward Voltage (VF) at IF = 8.0 A, TC = 150°C | 1.8 | V |
| Maximum Reverse Recovery Time (trr) | 75 | ns |
| Operating Junction Temperature (TJ) | -65 to +175 | °C |
| Maximum Thermal Resistance, Junction-to-Case (RθJC) | 2.0 | °C/W |
Key Features
- Ultrafast 75 nanosecond recovery time, ensuring minimal switching losses.
- High reverse energy capability with a guaranteed avalanche energy of 20 mJ.
- Excellent protection against voltage transients in switching inductive load circuits.
- Low forward voltage drop of 1.8 V at 8 A, reducing power losses.
- Low leakage current and high temperature glass passivated junction for reliability.
- High operating junction temperature up to 175°C.
- Pb-free packages available, meeting UL 94 V-0 standards.
- Corrosion-resistant finish and readily solderable terminal leads.
Applications
The MUR8100EG diode is designed for use in various high-performance applications, including:
- Switching power supplies: Due to its ultrafast recovery time and high reverse voltage capability.
- Inverters: For efficient and reliable operation in inverter circuits.
- Free-wheeling diodes: To handle high current and voltage transients in inductive load circuits.
- High-frequency power conversion: Where fast switching and low power losses are critical.
Q & A
- What is the maximum DC reverse voltage of the MUR8100EG diode?
The maximum DC reverse voltage (VRRM) is 1000 V. - What is the average rectified forward current rating of the MUR8100EG?
The average rectified forward current (IF(AV)) is 8.0 A. - What is the peak repetitive forward current of the MUR8100EG?
The peak repetitive forward current (IFM) is 16 A. - What is the maximum instantaneous forward voltage drop at 8 A and 150°C?
The maximum instantaneous forward voltage (VF) at 8 A and 150°C is 1.8 V. - What is the reverse recovery time of the MUR8100EG diode?
The reverse recovery time (trr) is 75 ns. - What is the operating junction temperature range of the MUR8100EG?
The operating junction temperature range is -65 to +175°C. - Is the MUR8100EG diode Pb-free?
- What is the thermal resistance from junction to case for the MUR8100EG?
The thermal resistance from junction to case (RθJC) is 2.0 °C/W.- What are some common applications for the MUR8100EG diode?
Common applications include switching power supplies, inverters, free-wheeling diodes, and high-frequency power conversion.- Does the MUR8100EG have any special protection features?
- What is the thermal resistance from junction to case for the MUR8100EG?
