MUR880E
  • Share:

onsemi MUR880E

Manufacturer No:
MUR880E
Manufacturer:
onsemi
Package:
Tube
Description:
DIODE GEN PURP 800V 8A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR880E is a high-performance, ultrafast power rectifier diode produced by onsemi. It is part of the SWITCHMODE® Power Rectifiers Ultrafast 'E' Series, designed to meet the demands of modern switching power supplies, inverters, and free-wheeling diode applications. This diode is known for its excellent protection against voltage transients in switching inductive load circuits and its high reverse energy capability.

Key Specifications

Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 800 V
Working Peak Reverse Voltage VRWM 800 V
DC Blocking Voltage VR 800 V
Average Rectified Forward Current (Rated VR, TC = 150°C) IF(AV) 8.0 A
Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 150°C) IFM 16 A
Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 100 A
Operating Junction and Storage Temperature Range TJ, Tstg −65 to +175 °C
Maximum Thermal Resistance, Junction-to-Case RJC 2.0 °C/W
Maximum Instantaneous Forward Voltage (iF = 8.0 A, TC = 150°C) vF 1.5 V
Maximum Instantaneous Reverse Current (Rated DC Voltage, TC = 100°C) iR 500 μA
Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/μs) trr 100 ns
Controlled Avalanche Energy WAVAL 20 mJ

Key Features

  • Ultrafast 75 nanosecond recovery time
  • 20 mJ avalanche energy guaranteed
  • Excellent protection against voltage transients in switching inductive load circuits
  • 175°C operating junction temperature
  • Popular TO-220 package
  • Epoxy meets UL 94 V-0 @ 0.125 in.
  • Low forward voltage and low leakage current
  • High temperature glass passivated junction
  • Reverse voltage to 800 V
  • Pb-free package available

Applications

  • Switching power supplies
  • Inverters
  • Free-wheeling diodes
  • High-frequency switching circuits
  • Power conversion systems requiring high reliability and efficiency

Q & A

  1. What is the peak repetitive reverse voltage of the MUR880E diode?

    The peak repetitive reverse voltage (VRRM) of the MUR880E diode is 800 V.

  2. What is the maximum average rectified forward current for the MUR880E?

    The maximum average rectified forward current (IF(AV)) for the MUR880E is 8.0 A at a case temperature of 150°C.

  3. What is the maximum reverse recovery time of the MUR880E diode?

    The maximum reverse recovery time (trr) of the MUR880E diode is 100 ns.

  4. What is the controlled avalanche energy capability of the MUR880E?

    The controlled avalanche energy (WAVAL) of the MUR880E is 20 mJ.

  5. What is the operating junction temperature range for the MUR880E?

    The operating junction temperature range for the MUR880E is from -65°C to +175°C.

  6. What package type is the MUR880E available in?

    The MUR880E is available in the TO-220 package.

  7. Is the MUR880E diode Pb-free?
  8. What are some typical applications for the MUR880E diode?

    The MUR880E diode is typically used in switching power supplies, inverters, and as free-wheeling diodes.

  9. What is the maximum thermal resistance, junction-to-case, for the MUR880E?

    The maximum thermal resistance, junction-to-case (RJC), for the MUR880E is 2.0 °C/W.

  10. What is the maximum instantaneous forward voltage for the MUR880E at 8.0 A and 150°C?

    The maximum instantaneous forward voltage (vF) for the MUR880E at 8.0 A and 150°C is 1.5 V.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):800 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.8 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):100 ns
Current - Reverse Leakage @ Vr:25 µA @ 800 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220-2
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$0.46
1,616

Please send RFQ , we will respond immediately.

Same Series
MUR880EG
MUR880EG
DIODE GEN PURP 800V 8A TO220AC
MUR8100EG
MUR8100EG
DIODE GEN PURP 1000V 8A TO220-2
MUR880E
MUR880E
DIODE GEN PURP 800V 8A TO220AC

Similar Products

Part Number MUR880E MUR880EG MUR480E MUR870E
Manufacturer onsemi onsemi onsemi Harris Corporation
Product Status Obsolete Active Obsolete Active
Diode Type Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 800 V 800 V 800 V 700 V
Current - Average Rectified (Io) 8A 8A 4A 8A
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 8 A 1.8 V @ 8 A 1.85 V @ 4 A 1.8 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 100 ns 100 ns 100 ns 110 ns
Current - Reverse Leakage @ Vr 25 µA @ 800 V 25 µA @ 800 V 25 µA @ 800 V 500 µA @ 700 V
Capacitance @ Vr, F - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 TO-220-2 DO-201AA, DO-27, Axial TO-220-2
Supplier Device Package TO-220-2 TO-220-2 Axial TO-220AC
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

PMEG100V080ELPDZ
PMEG100V080ELPDZ
Nexperia USA Inc.
DIODE SCHOTTKY 100V 8A CFP15
SBAT54XV2T1G
SBAT54XV2T1G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
SS16FP
SS16FP
onsemi
DIODE SCHOTTKY 60V 1A SOD123HE
STPS1H100AF
STPS1H100AF
STMicroelectronics
DIODE SCHOTTKY 100V 1A SMAFLAT
MURS260-M3/5BT
MURS260-M3/5BT
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 2A DO214AA
PMEG4050ETP-QX
PMEG4050ETP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
BAS16_S00Z
BAS16_S00Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
SS16HE3/61T
SS16HE3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 60V 1A DO214AC
1N4001GP-M3/54
1N4001GP-M3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
BAT54T
BAT54T
onsemi
DIODE SCHOTTKY 30V 200MA SOT523
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BAS316/ZLF
BAS316/ZLF
NXP USA Inc.
DIODE GEN PURP 100V 215MA SOD323

Related Product By Brand

NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
BAS16M3T5G
BAS16M3T5G
onsemi
DIODE GEN PURP 100V 200MA SOT723
1SMB5934BT3G
1SMB5934BT3G
onsemi
DIODE ZENER 24V 3W SMB
SZMMSZ4V7T1G
SZMMSZ4V7T1G
onsemi
DIODE ZENER 4.7V 500MW SOD123
1N5353BRL
1N5353BRL
onsemi
DIODE ZENER 16V 5W AXIAL
MJD44H11G
MJD44H11G
onsemi
TRANS NPN 80V 8A DPAK
MC100EP195FAR2
MC100EP195FAR2
onsemi
IC DELAY LINE 1024TAP 32-LQFP
NCS20072DR2G
NCS20072DR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
MC74AC273DTR2G
MC74AC273DTR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20TSSOP
MC74AC14DTR2G
MC74AC14DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
MC100EP16VBDTG
MC100EP16VBDTG
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
LV8711T-TLM-H
LV8711T-TLM-H
onsemi
IC MTR DRV BIPLR 2.7-5.5V 24SSOP