BDX33C
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Harris Corporation BDX33C

Manufacturer No:
BDX33C
Manufacturer:
Harris Corporation
Package:
Bulk
Description:
TRANS NPN DARL 100V 10A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BDX33C is a silicon Epitaxial-Base NPN power transistor in a monolithic Darlington configuration, manufactured by STMicroelectronics (previously associated with Harris Corporation through various mergers and acquisitions). It is packaged in a Jedec TO-220 plastic package. This transistor is designed for use in power linear and switching applications, offering high current and voltage handling capabilities.

Key Specifications

Parameter Unit Value
Collector-Base Voltage (VCBO) V 100
Collector-Emitter Voltage (VCEO) V 100
Collector Current (IC) A 10
Collector Peak Current (ICM) A 15
Base Current (IB) A 0.25
Total Dissipation at Tc ≤ 25°C (Ptot) W 70
Storage Temperature (Tstg) °C -65 to 150
Max. Operating Junction Temperature (Tj) °C 150
Collector-Emitter Saturation Voltage (VCE(sat)) V 2.5 @ IB = 6mA, IC = 3A
Base-Emitter Voltage (VBE) V 2.5 @ IC = 3A, VCE = 3V
DC Current Gain (hFE) 750 @ IC = 3A, VCE = 3V

Key Features

  • Monolithic Darlington configuration for high current gain.
  • Epitaxial-Base NPN transistor structure for improved performance.
  • Jedec TO-220 plastic package for robust mechanical and thermal characteristics.
  • High collector current and peak current handling capabilities.
  • High collector-emitter and collector-base voltage ratings.
  • Low collector-emitter saturation voltage for efficient switching and linear applications.
  • High DC current gain (hFE) for reliable operation.

Applications

  • Power linear applications such as amplifiers and regulators.
  • Power switching applications including motor control, solenoid drivers, and power supplies.
  • High-fidelity amplifiers and audio equipment.
  • Industrial and commercial equipment requiring high power and reliability.

Q & A

  1. What is the BDX33C transistor used for?

    The BDX33C is used in power linear and switching applications, such as amplifiers, regulators, motor control, and power supplies.

  2. What is the maximum collector current of the BDX33C?

    The maximum collector current (IC) of the BDX33C is 10 A.

  3. What is the maximum collector-emitter voltage of the BDX33C?

    The maximum collector-emitter voltage (VCEO) of the BDX33C is 100 V.

  4. What is the package type of the BDX33C?

    The BDX33C is packaged in a Jedec TO-220 plastic package.

  5. What is the maximum operating junction temperature of the BDX33C?

    The maximum operating junction temperature (Tj) of the BDX33C is 150°C.

  6. What is the collector-emitter saturation voltage of the BDX33C?

    The collector-emitter saturation voltage (VCE(sat)) of the BDX33C is 2.5 V at IB = 6 mA and IC = 3 A.

  7. What is the DC current gain (hFE) of the BDX33C?

    The DC current gain (hFE) of the BDX33C is 750 at IC = 3 A and VCE = 3 V.

  8. Is the BDX33C RoHS compliant?

    Yes, the BDX33C is Lead Free and RoHS compliant.

  9. What are the storage temperature limits for the BDX33C?

    The storage temperature (Tstg) range for the BDX33C is -65°C to 150°C.

  10. What is the total dissipation at Tc ≤ 25°C for the BDX33C?

    The total dissipation at Tc ≤ 25°C (Ptot) for the BDX33C is 70 W.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):10 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 6mA, 3A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 3A, 3V
Power - Max:70 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220AB
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