BDX33C
  • Share:

Harris Corporation BDX33C

Manufacturer No:
BDX33C
Manufacturer:
Harris Corporation
Package:
Bulk
Description:
TRANS NPN DARL 100V 10A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BDX33C is a silicon Epitaxial-Base NPN power transistor in a monolithic Darlington configuration, manufactured by STMicroelectronics (previously associated with Harris Corporation through various mergers and acquisitions). It is packaged in a Jedec TO-220 plastic package. This transistor is designed for use in power linear and switching applications, offering high current and voltage handling capabilities.

Key Specifications

Parameter Unit Value
Collector-Base Voltage (VCBO) V 100
Collector-Emitter Voltage (VCEO) V 100
Collector Current (IC) A 10
Collector Peak Current (ICM) A 15
Base Current (IB) A 0.25
Total Dissipation at Tc ≤ 25°C (Ptot) W 70
Storage Temperature (Tstg) °C -65 to 150
Max. Operating Junction Temperature (Tj) °C 150
Collector-Emitter Saturation Voltage (VCE(sat)) V 2.5 @ IB = 6mA, IC = 3A
Base-Emitter Voltage (VBE) V 2.5 @ IC = 3A, VCE = 3V
DC Current Gain (hFE) 750 @ IC = 3A, VCE = 3V

Key Features

  • Monolithic Darlington configuration for high current gain.
  • Epitaxial-Base NPN transistor structure for improved performance.
  • Jedec TO-220 plastic package for robust mechanical and thermal characteristics.
  • High collector current and peak current handling capabilities.
  • High collector-emitter and collector-base voltage ratings.
  • Low collector-emitter saturation voltage for efficient switching and linear applications.
  • High DC current gain (hFE) for reliable operation.

Applications

  • Power linear applications such as amplifiers and regulators.
  • Power switching applications including motor control, solenoid drivers, and power supplies.
  • High-fidelity amplifiers and audio equipment.
  • Industrial and commercial equipment requiring high power and reliability.

Q & A

  1. What is the BDX33C transistor used for?

    The BDX33C is used in power linear and switching applications, such as amplifiers, regulators, motor control, and power supplies.

  2. What is the maximum collector current of the BDX33C?

    The maximum collector current (IC) of the BDX33C is 10 A.

  3. What is the maximum collector-emitter voltage of the BDX33C?

    The maximum collector-emitter voltage (VCEO) of the BDX33C is 100 V.

  4. What is the package type of the BDX33C?

    The BDX33C is packaged in a Jedec TO-220 plastic package.

  5. What is the maximum operating junction temperature of the BDX33C?

    The maximum operating junction temperature (Tj) of the BDX33C is 150°C.

  6. What is the collector-emitter saturation voltage of the BDX33C?

    The collector-emitter saturation voltage (VCE(sat)) of the BDX33C is 2.5 V at IB = 6 mA and IC = 3 A.

  7. What is the DC current gain (hFE) of the BDX33C?

    The DC current gain (hFE) of the BDX33C is 750 at IC = 3 A and VCE = 3 V.

  8. Is the BDX33C RoHS compliant?

    Yes, the BDX33C is Lead Free and RoHS compliant.

  9. What are the storage temperature limits for the BDX33C?

    The storage temperature (Tstg) range for the BDX33C is -65°C to 150°C.

  10. What is the total dissipation at Tc ≤ 25°C for the BDX33C?

    The total dissipation at Tc ≤ 25°C (Ptot) for the BDX33C is 70 W.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):10 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:2.5V @ 6mA, 3A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 3A, 3V
Power - Max:70 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220AB
0 Remaining View Similar

In Stock

$0.54
923

Please send RFQ , we will respond immediately.

Same Series
BDX33C
BDX33C
TRANS NPN DARL 100V 10A TO220AB
BDX34B
BDX34B
TRANS PNP DARL 80V 10A TO220-3
BDX33BG
BDX33BG
TRANS NPN DARL 80V 10A TO220
BDX34CG
BDX34CG
TRANS PNP DARL 100V 10A TO220
BDX34BG
BDX34BG
TRANS PNP DARL 80V 10A TO220

Related Product By Categories

BCP69E6327
BCP69E6327
Infineon Technologies
POWER BIPOLAR TRANSISTOR
TIP121TU
TIP121TU
onsemi
TRANS NPN DARL 80V 5A TO220-3
SMMBT2222ALT3G
SMMBT2222ALT3G
onsemi
TRANS NPN 40V 0.6A SOT23-3
BDX34C
BDX34C
STMicroelectronics
TRANS PNP DARL 100V 10A TO220
BC846BQBZ
BC846BQBZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC847BQB-QZ
BC847BQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BCX5616QTC
BCX5616QTC
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT89 T&
DS2003CMX/NOPB
DS2003CMX/NOPB
National Semiconductor
SMALL SIGNAL BIPOLAR TRANSISTOR,
MMBT3904T-7
MMBT3904T-7
Diodes Incorporated
TRANS NPN 40V 0.2A SOT523
BC847CW/ZLF
BC847CW/ZLF
Nexperia USA Inc.
TRANS SOT323
SS8050-D-AP
SS8050-D-AP
Micro Commercial Co
TRANS NPN 25V 1.5A TO92
BUK9Y41-80E/GFX
BUK9Y41-80E/GFX
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

MUR860
MUR860
Harris Corporation
RECTIFIER DIODE
LM339AN
LM339AN
Harris Corporation
QUAD COMPARATOR
CD4049UBM96
CD4049UBM96
Harris Corporation
IC BUFFER INVERT 18V 16SOIC
CD74HC4060EX
CD74HC4060EX
Harris Corporation
14-STAGE BINARY COUNTER WITH OSC
CD40174BD3
CD40174BD3
Harris Corporation
CMOS HEX D-TYPE FLIP-FLOP
CD74HCT14E
CD74HCT14E
Harris Corporation
IC INVERT SCHMITT 6CH 1-IN 14DIP
CD74ACT04M96
CD74ACT04M96
Harris Corporation
IC INVERTER 6CH 1-INP 14SOIC
CD4023BF
CD4023BF
Harris Corporation
CMOS TRIPLE 3-INPUT NAND GATE
CD74HCT00MR2490
CD74HCT00MR2490
Harris Corporation
IC GATE NAND 4CH 2-INP 14SOIC
CD4044BEX
CD4044BEX
Harris Corporation
CMOS QUAD NAND R/S LATCH
CD74HC259M
CD74HC259M
Harris Corporation
D LATCH
CD74HCT138M
CD74HCT138M
Harris Corporation
IC DECODER/DEMUX 1X3:8 16SOIC