MUR860
  • Share:

Harris Corporation MUR860

Manufacturer No:
MUR860
Manufacturer:
Harris Corporation
Package:
Tube
Description:
RECTIFIER DIODE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR860 is an ultrafast recovery rectifier diode produced by Harris Corporation. This diode is designed for high-performance applications requiring fast switching times, high current capability, and low power loss. It features a TO-220AC package, making it suitable for a variety of power management and switching applications. The MUR860 is known for its ultra-fast switching, high surge current capability, and low reverse leakage current, making it an excellent choice for power supply circuits, lighting systems, and UPS applications.

Key Specifications

Parameter Symbol Condition Typical Maximum Units
Maximum Repetitive Peak Reverse Voltage VRRM - - 600 V
Working Peak Reverse Voltage VRWM - - 600 V
Maximum DC Blocking Voltage VDC - - 600 V
Maximum Average Forward Rectified Current IF(AV) 50% duty cycle @ TA=100°C, rectangular wave form - 8 A
Peak Forward Surge Current IFSM 8.3ms, Half Sine pulse - 110 A
Forward Voltage Drop VF @ 8A, Pulse, TJ = 25°C 1.2 2.2 V
Reverse Current IR @ VR = rated VR, TJ = 25°C 0.02 5 μA
Reverse Recovery Time trr IF=500mA, IR=1A, and Irm=250mA 40 50 ns
Junction Temperature TJ - - -55 to +150 °C
Storage Temperature TSTG - - -55 to +150 °C
Thermal Resistance, Junction to Ambient RθJA DC operation - 25 °C/W

Key Features

  • Ultra-Fast Switching: The MUR860 features ultra-fast recovery times, making it suitable for high-frequency switching applications.
  • High Current Capability: It can handle a maximum average forward rectified current of 8A and peak forward surge current of up to 110A.
  • Low Reverse Leakage Current: The diode has a low reverse current, typically 0.02 μA at 25°C.
  • High Surge Current Capability: It can withstand high surge currents, enhancing its reliability in demanding applications.
  • Flammability Classification: The plastic package has UL Flammability Classification 94V-0.
  • Pb-Free and Halogen-Free: The device is lead-free and halogen-free, complying with environmental standards.
  • Low Forward Voltage Drop: The diode exhibits a low forward voltage drop, typically 1.2V at 8A, reducing power loss.

Applications

  • Switching Power Supplies (SMPS): Ideal for use in high-frequency switching power supplies due to its fast recovery time and low power loss.
  • Lighting Systems: Suitable for lighting applications requiring high efficiency and fast switching.
  • Uninterruptible Power Supplies (UPS): Used in UPS systems for reliable and efficient power management.
  • General Purpose Rectification: Can be used in various general-purpose rectification applications where high current and fast recovery are needed.
  • Power Switching Circuits: Applicable in power switching circuits that require high surge current capability and low reverse leakage current.

Q & A

  1. Q: What is the maximum repetitive peak reverse voltage of the MUR860?
    A: The maximum repetitive peak reverse voltage (VRRM) of the MUR860 is 600V.
  2. Q: What is the maximum average forward rectified current of the MUR860?
    A: The maximum average forward rectified current (IF(AV)) of the MUR860 is 8A.
  3. Q: What is the typical forward voltage drop of the MUR860 at 8A?
    A: The typical forward voltage drop (VF) of the MUR860 at 8A is 1.2V.
  4. Q: What is the reverse recovery time of the MUR860?
    A: The reverse recovery time (trr) of the MUR860 is typically 40ns and maximally 50ns.
  5. Q: What is the junction temperature range of the MUR860?
    A: The junction temperature range (TJ) of the MUR860 is -55°C to +150°C.
  6. Q: Is the MUR860 Pb-free and halogen-free?
    A: Yes, the MUR860 is lead-free and halogen-free, complying with environmental standards.
  7. Q: What is the flammability classification of the MUR860's plastic package?
    A: The plastic package of the MUR860 has UL Flammability Classification 94V-0.
  8. Q: What are some common applications of the MUR860?
    A: The MUR860 is commonly used in switching power supplies, lighting systems, UPS systems, and general-purpose rectification applications.
  9. Q: What is the thermal resistance, junction to ambient, of the MUR860?
    A: The thermal resistance, junction to ambient (RθJA), of the MUR860 is 25°C/W.
  10. Q: How many units are typically shipped in a tube for the MUR860?
    A: The MUR860 is typically shipped in tubes containing 50 units each.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.5 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):60 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2
Supplier Device Package:TO-220-2
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

$1.17
560

Please send RFQ , we will respond immediately.

Same Series
DCM-17W5P-A191-K87
DCM-17W5P-A191-K87
CONN D-SUB PLUG 17POS PNL MNT

Similar Products

Part Number MUR860 MUR860J MURF860 MUR860G MUR890 MUR860H MUR8L60 MURB860 MUR460 MUR810 MUR820 MUR840
Manufacturer Harris Corporation WeEn Semiconductors SMC Diode Solutions onsemi Harris Corporation onsemi Taiwan Semiconductor Corporation SMC Diode Solutions Taiwan Semiconductor Corporation Harris Corporation Vishay General Semiconductor - Diodes Division Harris Corporation
Product Status Obsolete Active Obsolete Active Active Obsolete Active Obsolete Active Obsolete Obsolete Obsolete
Diode Type Standard Standard Standard Standard - Standard Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 600 V - 600 V 600 V 600 V 600 V 100 V 200 V 400 V
Current - Average Rectified (Io) 8A 8A 8A 8A - 8A 8A (DC) 8A 4A 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 8 A 1.25 V @ 8 A 2.2 V @ 8 A 1.5 V @ 8 A - 1.5 V @ 8 A 1.3 V @ 8 A 2.2 V @ 8 A 1.28 V @ 4 A 975 mV @ 8 A 975 mV @ 8 A 1.3 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) - Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 60 ns 90 ns 50 ns 60 ns - 60 ns 65 ns 50 ns 50 ns 35 ns 35 ns 60 ns
Current - Reverse Leakage @ Vr 10 µA @ 600 V 10 µA @ 600 V 5 µA @ 600 V 10 µA @ 600 V - 10 µA @ 600 V 5 µA @ 600 V 5 µA @ 600 V 10 µA @ 600 V 5 µA @ 100 V 5 µA @ 200 V 10 µA @ 400 V
Capacitance @ Vr, F - - - - - - - - 65pF @ 4V, 1MHz - - -
Mounting Type Through Hole Surface Mount Through Hole Through Hole - Through Hole Through Hole Surface Mount Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 DO-214AB, SMC TO-220-2 Full Pack, Isolated Tab TO-220-2 - TO-220-2 TO-220-2 TO-263-3, D²Pak (2 Leads + Tab), TO-263AB DO-201AD, Axial TO-220-2 TO-220-2 TO-220-2
Supplier Device Package TO-220-2 SMC ITO-220AC TO-220-2 - TO-220-2 TO-220AC D2PAK DO-201AD TO-220-2 TO-220AC TO-220AC
Operating Temperature - Junction -65°C ~ 175°C 175°C (Max) -55°C ~ 150°C -65°C ~ 175°C - -65°C ~ 175°C -55°C ~ 175°C -55°C ~ 150°C -55°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C

Related Product By Categories

1N4001G-T
1N4001G-T
Diodes Incorporated
DIODE GEN PURP 50V 1A DO41
PMEG4020EPASX
PMEG4020EPASX
Nexperia USA Inc.
DIODE SCHOTTKY 40V 2A DFN2020D-3
MBRS140T3G
MBRS140T3G
onsemi
DIODE SCHOTTKY 40V 1A SMB
STPSC8H065DI
STPSC8H065DI
STMicroelectronics
DIODE SCHOTTKY 650V 8A TO220AC
MBRS130
MBRS130
Fairchild Semiconductor
RECTIFIER, SCHOTTKY, 1A, 30V
NSVBAS16W1T1G
NSVBAS16W1T1G
onsemi
SS SC88 SWITCHING DIODE
1N4007G L
1N4007G L
MDD
GENERAL DIODE 1KV 1A DO-41
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
BYV29B-600,118
BYV29B-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 9A D2PAK
BYC10X-600PQ
BYC10X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 10A TO220F
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BAT43 A0
BAT43 A0
Taiwan Semiconductor Corporation
DIODE SCHOTTKY DO-35

Related Product By Brand

RHRP8120S2536
RHRP8120S2536
Harris Corporation
RECTIFIER, AVALANCHE, 2 CHANNEL,
CD4541BFX
CD4541BFX
Harris Corporation
PROGRAMMABLE TIMER
CD4051BF
CD4051BF
Harris Corporation
SINGLE-ENDED MUX, 8 CHANNEL
CD74HC4051MR2499
CD74HC4051MR2499
Harris Corporation
HIGH SPEED CMOS LOGIC ANALOG MUL
CD74HC93M
CD74HC93M
Harris Corporation
BINARY COUNTER
CD74HC574M
CD74HC574M
Harris Corporation
IC FF D-TYPE SNGL 8BIT 20SOIC
CD74AC32M
CD74AC32M
Harris Corporation
IC GATE OR 4CH 2-INP 14SOIC
CD4049UBM
CD4049UBM
Harris Corporation
INVERTER, 4000/14000/40000 SERIE
CD4081BEX
CD4081BEX
Harris Corporation
CMOS QUAD 2-INPUT AND GATE
CD4001BEX
CD4001BEX
Harris Corporation
CMOS QUAD 2-INPUT NOR GATE
CD74HCT259MR2499
CD74HCT259MR2499
Harris Corporation
HIGH-SPEED CMOS LOGIC 8 BIT ADDR
CD4067BFX
CD4067BFX
Harris Corporation
CMOS ANALOG MUX/DEMUX