Overview
The BDX34BG is a PNP Darlington complementary silicon power transistor manufactured by onsemi. This device is part of the BDX34 series, designed for general-purpose and low-speed switching applications. The BDX34BG is known for its high DC current gain and low collector-emitter saturation voltage, making it suitable for a variety of power management and control circuits.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage (Max) | VCEO | 80 | Vdc |
| Collector-Base Voltage (Max) | VCBO | 80 | Vdc |
| Emitter-Base Voltage (Max) | VEBO | 5.0 | Vdc |
| Collector Current (Continuous) | IC | 10 | A |
| Base Current (Max) | IB | 0.25 | A |
| Total Device Dissipation @ TC = 25°C | PD | 70 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -65 to +150 | °C |
| Thermal Resistance, Junction-to-Case | RJC | 1.78 | °C/W |
| DC Current Gain (Typical) | hFE | 2500 | |
| Collector-Emitter Saturation Voltage (Max) | VCE(sat) | 2.5 | Vdc |
Key Features
- High DC Current Gain: The BDX34BG has a typical DC current gain (hFE) of 2500 at IC = 4.0 A, making it highly efficient for amplification and switching applications.
- Low Collector-Emitter Saturation Voltage: With a maximum VCE(sat) of 2.5 Vdc at IC = 3.0 A, this transistor minimizes power losses in saturation.
- Monolithic Construction with Built-In Base-Emitter Shunt Resistors: This design enhances stability and simplifies circuit design.
- Pb-Free and RoHS Compliant: The BDX34BG is environmentally friendly and compliant with current regulatory standards.
- High Collector-Emitter Sustaining Voltage: The device can sustain up to 80 Vdc, ensuring reliable operation under various conditions.
Applications
The BDX34BG is suitable for a wide range of applications, including:
- General-purpose power amplification and switching.
- Low-speed switching circuits.
- Power management and control systems.
- Automotive and industrial control systems.
- Audio amplifiers and other high-current applications.
Q & A
- What is the maximum collector-emitter voltage for the BDX34BG?
The maximum collector-emitter voltage (VCEO) for the BDX34BG is 80 Vdc.
- What is the typical DC current gain of the BDX34BG?
The typical DC current gain (hFE) of the BDX34BG is 2500 at IC = 4.0 A.
- What is the maximum collector current for the BDX34BG?
The maximum continuous collector current (IC) for the BDX34BG is 10 A.
- Is the BDX34BG Pb-Free and RoHS compliant?
- What is the thermal resistance, junction-to-case for the BDX34BG?
The thermal resistance, junction-to-case (RJC) for the BDX34BG is 1.78 °C/W).
- What are the operating and storage junction temperature ranges for the BDX34BG?
The operating and storage junction temperature range for the BDX34BG is -65 to +150 °C).
- What is the maximum collector-emitter saturation voltage for the BDX34BG?
The maximum collector-emitter saturation voltage (VCE(sat)) for the BDX34BG is 2.5 Vdc at IC = 3.0 A).
- What type of construction does the BDX34BG have?
The BDX34BG has a monolithic construction with built-in base-emitter shunt resistors).
- What are some common applications for the BDX34BG?
The BDX34BG is commonly used in general-purpose power amplification, low-speed switching circuits, power management, and control systems, among others).
- What is the package type for the BDX34BG?
The BDX34BG is available in a TO-220 package).
