Overview
The BD243BTU is a medium power NPN epitaxial silicon transistor manufactured by Fairchild Semiconductor, now part of ON Semiconductor. This transistor is designed for linear and switching applications. It is part of the BD243 series, which includes variants BD243, BD243A, BD243B, and BD243C, each with slightly different voltage ratings. The BD243BTU is packaged in a TO-220-3 case, making it suitable for through-hole mounting.
Although the BD243BTU is currently obsolete and not in production, it remains relevant for legacy systems and maintenance purposes. The transistor is known for its robust electrical characteristics and reliability in various operating conditions.
Key Specifications
| Parameter | Value | Units |
|---|---|---|
| Collector-Base Voltage (VCBO) | 80 | V |
| Collector-Emitter Voltage (VCEO) | 80 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (DC) (IC) | 6 | A |
| Collector Current (Pulse) (ICP) | 10 | A |
| Base Current (IB) | 2 | A |
| Collector Dissipation (PC) | 65 | W |
| Junction Temperature (TJ) | 150 | °C |
| Storage Temperature (TSTG) | -65 to 150 | °C |
| DC Current Gain (hFE) | 15 @ 3A, 4V | - |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 1.5V @ 1A, 6A | V |
| Base-Emitter ON Voltage (VBE(on)) | 2V @ 6A | V |
Key Features
- Medium Power Capability: The BD243BTU is designed to handle medium power applications, making it suitable for a variety of linear and switching uses.
- High Current Handling: With a maximum collector current of 6A and a pulse current of up to 10A, this transistor can manage high current requirements.
- Robust Voltage Ratings: It has a collector-emitter voltage rating of 80V, ensuring it can operate reliably in high-voltage environments.
- High Junction Temperature: The transistor can operate up to a junction temperature of 150°C, making it suitable for demanding thermal conditions.
- Complementary Transistors: The BD243BTU is complementary to the BD244, BD244A, BD244B, and BD244C transistors, allowing for balanced circuit designs.
Applications
- Linear Amplifiers: The BD243BTU can be used in linear amplifier circuits where medium power and high current handling are required.
- Switching Circuits: Its high switching capabilities make it suitable for use in switching power supplies, motor control circuits, and other high-frequency applications.
- Power Management: It can be employed in power management circuits, such as voltage regulators and power amplifiers.
- Automotive and Industrial Systems: The transistor's robust specifications make it a good choice for automotive and industrial systems that require reliable and high-performance components.
Q & A
- What is the maximum collector current of the BD243BTU?
The maximum collector current (IC) of the BD243BTU is 6A.
- What is the collector-emitter voltage rating of the BD243BTU?
The collector-emitter voltage rating (VCEO) of the BD243BTU is 80V.
- What is the junction temperature range of the BD243BTU?
The junction temperature (TJ) range of the BD243BTU is up to 150°C.
- What is the package type of the BD243BTU?
The BD243BTU is packaged in a TO-220-3 case.
- Is the BD243BTU still in production?
No, the BD243BTU is obsolete and not in production.
- What are the complementary transistors to the BD243BTU?
The BD243BTU is complementary to the BD244, BD244A, BD244B, and BD244C transistors.
- What is the maximum collector dissipation of the BD243BTU?
The maximum collector dissipation (PC) of the BD243BTU is 65W.
- What is the DC current gain (hFE) of the BD243BTU?
The DC current gain (hFE) of the BD243BTU is 15 at 3A and 4V.
- What is the collector-emitter saturation voltage (VCE(sat)) of the BD243BTU?
The collector-emitter saturation voltage (VCE(sat)) of the BD243BTU is 1.5V at 1A and 6A.
- What is the base-emitter ON voltage (VBE(on)) of the BD243BTU?
The base-emitter ON voltage (VBE(on)) of the BD243BTU is 2V at 6A.
