BC857CS_R1_00001
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Panjit International Inc. BC857CS_R1_00001

Manufacturer No:
BC857CS_R1_00001
Manufacturer:
Panjit International Inc.
Package:
Tape & Reel (TR)
Description:
PNP GENERAL PURPOSE TRANSISTORS
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857CS_R1_00001 is a silicon PNP transistor manufactured by Panjit International Inc. This component is part of the BC857 series, designed for general-purpose amplifier and switching applications. The transistor is produced using the epitaxial planar process and is packaged in a surface mount SOT-363 case, making it suitable for a wide range of electronic circuits.

Key Specifications

Parameter Symbol Value Units
Collector-Emitter Voltage VCEO 45 V
Collector-Base Voltage VCBO 50 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC -100 mA
Peak Collector Current ICM -200 mA
Peak Base Current IBM -200 mA
Power Dissipation P_TOT 225 mW
Operating and Storage Junction Temperature TJ, Tstg -55 to +150 °C
Thermal Resistance ΘJA 375 °C/W
Saturation Voltage (VCE(SAT)) VCE(SAT) 0.30 (IC=10mA, IB=0.5mA) V
Saturation Voltage (VCE(SAT)) VCE(SAT) 0.65 (IC=100mA, IB=5.0mA) V
Current Gain (hFE) hFE 220-475 (VCE=5.0V, IC=2.0mA)

Key Features

  • General Purpose Amplifier and Switching Applications: Designed for a wide range of electronic circuits requiring general-purpose amplification and switching.
  • Surface Mount Package: Packaged in a SOT-363 case, suitable for surface mount technology (SMT) assembly.
  • High Current Gain: Offers a high current gain (hFE) ranging from 220 to 475, making it suitable for various amplifier configurations.
  • Low Saturation Voltage: Features low saturation voltages (VCE(SAT)) of 0.30V and 0.65V for efficient operation.
  • Quality Certifications: AEC-Q101 qualified and compliant with TS16949 quality system certificate, ensuring high reliability and quality.
  • Environmental Compliance: Lead-free and halogen-free, complying with EU RoHS 2011/65/EU directive and IEC61249 standard.

Applications

  • General Purpose Amplifiers: Suitable for use in various amplifier circuits where a PNP transistor is required.
  • Switching Circuits: Can be used in switching applications due to its high current gain and low saturation voltage.
  • Automotive Electronics: AEC-Q101 qualification makes it suitable for use in automotive electronic systems.
  • Consumer Electronics: Used in a variety of consumer electronic devices requiring reliable and efficient transistor performance.

Q & A

  1. What is the collector-emitter voltage (VCEO) of the BC857CS_R1_00001 transistor?

    The collector-emitter voltage (VCEO) is 45V.

  2. What is the continuous collector current (IC) of this transistor?

    The continuous collector current (IC) is -100mA.

  3. What is the power dissipation (P_TOT) of the BC857CS_R1_00001?

    The power dissipation (P_TOT) is 225mW.

  4. Is the BC857CS_R1_00001 compliant with environmental regulations?

    Yes, it is lead-free and halogen-free, complying with EU RoHS 2011/65/EU directive and IEC61249 standard.

  5. What is the operating and storage junction temperature range for this transistor?

    The operating and storage junction temperature range is -55 to +150°C.

  6. What are the typical applications of the BC857CS_R1_00001 transistor?

    It is used in general-purpose amplifiers, switching circuits, automotive electronics, and consumer electronics.

  7. What is the current gain (hFE) of the BC857CS_R1_00001 transistor?

    The current gain (hFE) ranges from 220 to 475 at VCE=5.0V and IC=2.0mA.

  8. Is the BC857CS_R1_00001 AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified, making it suitable for automotive electronic systems.

  9. What is the package type of the BC857CS_R1_00001 transistor?

    The transistor is packaged in a SOT-363 surface mount case.

  10. What are the saturation voltages (VCE(SAT)) for this transistor?

    The saturation voltages are 0.30V (IC=10mA, IB=0.5mA) and 0.65V (IC=100mA, IB=5.0mA).

Product Attributes

Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):45V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:225mW
Frequency - Transition:200MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SOT-363
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