Overview
The BC857CS_R1_00001 is a silicon PNP transistor manufactured by Panjit International Inc. This component is part of the BC857 series, designed for general-purpose amplifier and switching applications. The transistor is produced using the epitaxial planar process and is packaged in a surface mount SOT-363 case, making it suitable for a wide range of electronic circuits.
Key Specifications
| Parameter | Symbol | Value | Units |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 45 | V |
| Collector-Base Voltage | VCBO | 50 | V |
| Emitter-Base Voltage | VEBO | 5.0 | V |
| Continuous Collector Current | IC | -100 | mA |
| Peak Collector Current | ICM | -200 | mA |
| Peak Base Current | IBM | -200 | mA |
| Power Dissipation | P_TOT | 225 | mW |
| Operating and Storage Junction Temperature | TJ, Tstg | -55 to +150 | °C |
| Thermal Resistance | ΘJA | 375 | °C/W |
| Saturation Voltage (VCE(SAT)) | VCE(SAT) | 0.30 (IC=10mA, IB=0.5mA) | V |
| Saturation Voltage (VCE(SAT)) | VCE(SAT) | 0.65 (IC=100mA, IB=5.0mA) | V |
| Current Gain (hFE) | hFE | 220-475 (VCE=5.0V, IC=2.0mA) |
Key Features
- General Purpose Amplifier and Switching Applications: Designed for a wide range of electronic circuits requiring general-purpose amplification and switching.
- Surface Mount Package: Packaged in a SOT-363 case, suitable for surface mount technology (SMT) assembly.
- High Current Gain: Offers a high current gain (hFE) ranging from 220 to 475, making it suitable for various amplifier configurations.
- Low Saturation Voltage: Features low saturation voltages (VCE(SAT)) of 0.30V and 0.65V for efficient operation.
- Quality Certifications: AEC-Q101 qualified and compliant with TS16949 quality system certificate, ensuring high reliability and quality.
- Environmental Compliance: Lead-free and halogen-free, complying with EU RoHS 2011/65/EU directive and IEC61249 standard.
Applications
- General Purpose Amplifiers: Suitable for use in various amplifier circuits where a PNP transistor is required.
- Switching Circuits: Can be used in switching applications due to its high current gain and low saturation voltage.
- Automotive Electronics: AEC-Q101 qualification makes it suitable for use in automotive electronic systems.
- Consumer Electronics: Used in a variety of consumer electronic devices requiring reliable and efficient transistor performance.
Q & A
- What is the collector-emitter voltage (VCEO) of the BC857CS_R1_00001 transistor?
The collector-emitter voltage (VCEO) is 45V.
- What is the continuous collector current (IC) of this transistor?
The continuous collector current (IC) is -100mA.
- What is the power dissipation (P_TOT) of the BC857CS_R1_00001?
The power dissipation (P_TOT) is 225mW.
- Is the BC857CS_R1_00001 compliant with environmental regulations?
Yes, it is lead-free and halogen-free, complying with EU RoHS 2011/65/EU directive and IEC61249 standard.
- What is the operating and storage junction temperature range for this transistor?
The operating and storage junction temperature range is -55 to +150°C.
- What are the typical applications of the BC857CS_R1_00001 transistor?
It is used in general-purpose amplifiers, switching circuits, automotive electronics, and consumer electronics.
- What is the current gain (hFE) of the BC857CS_R1_00001 transistor?
The current gain (hFE) ranges from 220 to 475 at VCE=5.0V and IC=2.0mA.
- Is the BC857CS_R1_00001 AEC-Q101 qualified?
Yes, it is AEC-Q101 qualified, making it suitable for automotive electronic systems.
- What is the package type of the BC857CS_R1_00001 transistor?
The transistor is packaged in a SOT-363 surface mount case.
- What are the saturation voltages (VCE(SAT)) for this transistor?
The saturation voltages are 0.30V (IC=10mA, IB=0.5mA) and 0.65V (IC=100mA, IB=5.0mA).
