TIP29CTU
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onsemi TIP29CTU

Manufacturer No:
TIP29CTU
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 100V 1A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The TIP29CTU is an NPN epitaxial silicon transistor produced by onsemi (formerly Fairchild Semiconductor). This transistor is designed for medium power linear switching applications. It is part of the TIP29 series, which includes the TIP29, TIP29A, and TIP29C, each with different voltage ratings. The TIP29CTU is packaged in a TO-220 3-lead standard case, making it suitable for a variety of power management and switching circuits.

Key Specifications

Parameter Value Unit
Transistor Type NPN
Collector-Base Voltage (VCBO) 100 V
Collector-Emitter Voltage (VCEO) 100 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) - DC 1 A
Collector Current (IC) - Pulse 3 A
Base Current (IB) 0.4 A
Junction Temperature (TJ) 150 °C
Storage Temperature Range (TSTG) -65 to 150 °C
Collector Dissipation (PC) at TA = 25°C 2 W
Collector Dissipation (PC) at TC = 25°C 30 W
DC Current Gain (hFE) 15 to 75
Collector-Emitter Saturation Voltage (VCE(sat)) 0.7 V
Base-Emitter On Voltage (VBE(on)) 1.3 V

Key Features

  • Medium power linear switching applications
  • Complementary to TIP30 series
  • High collector current capability up to 1 A (DC) and 3 A (pulse)
  • High collector-emitter voltage rating of 100 V
  • TO-220 3-lead standard package for easy mounting and heat dissipation
  • Wide operating temperature range from -65°C to 150°C
  • High DC current gain (hFE) ranging from 15 to 75

Applications

  • Power management circuits
  • Switching circuits
  • Amplifier circuits requiring medium power handling
  • Automotive and industrial control systems
  • General-purpose power electronics

Q & A

  1. What is the transistor type of the TIP29CTU?

    The TIP29CTU is an NPN epitaxial silicon transistor.

  2. What is the maximum collector-emitter voltage (VCEO) of the TIP29CTU?

    The maximum collector-emitter voltage (VCEO) is 100 V.

  3. What is the maximum collector current (IC) for the TIP29CTU?

    The maximum collector current (IC) is 1 A (DC) and 3 A (pulse).

  4. What is the package type of the TIP29CTU?

    The TIP29CTU is packaged in a TO-220 3-lead standard case.

  5. What are the typical applications of the TIP29CTU?

    Typical applications include power management circuits, switching circuits, amplifier circuits, automotive and industrial control systems, and general-purpose power electronics.

  6. What is the junction temperature range for the TIP29CTU?

    The junction temperature range is up to 150°C.

  7. What is the storage temperature range for the TIP29CTU?

    The storage temperature range is from -65°C to 150°C.

  8. Is the TIP29CTU still in production?

    No, the TIP29CTU is listed as obsolete and is no longer in production.

  9. What is the DC current gain (hFE) range for the TIP29CTU?

    The DC current gain (hFE) ranges from 15 to 75.

  10. What is the collector-emitter saturation voltage (VCE(sat)) for the TIP29CTU?

    The collector-emitter saturation voltage (VCE(sat)) is 0.7 V.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 125mA, 1A
Current - Collector Cutoff (Max):300µA
DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 1A, 4V
Power - Max:2 W
Frequency - Transition:3MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
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In Stock

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Same Series
TIP29A
TIP29A
TRANS NPN 60V 1A TO220-3
TIP29
TIP29
TRANS NPN 40V 1A TO220-3
TIP29CTSTU
TIP29CTSTU
TRANS NPN 100V 1A TO220-3
TIP29ATU
TIP29ATU
TRANS NPN 60V 1A TO220-3

Similar Products

Part Number TIP29CTU TIP29ATU
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 100 V 60 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 125mA, 1A 700mV @ 125mA, 1A
Current - Collector Cutoff (Max) 300µA 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1A, 4V 15 @ 1A, 4V
Power - Max 2 W 2 W
Frequency - Transition 3MHz 3MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3
Supplier Device Package TO-220-3 TO-220-3

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