TIP142TTU
  • Share:

onsemi TIP142TTU

Manufacturer No:
TIP142TTU
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS NPN DARL 100V 10A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The TIP142TTU is an NPN Epitaxial Silicon Darlington Transistor produced by ON Semiconductor. This transistor is designed for general-purpose amplifier and low-frequency switching applications. It is part of the TIP140, TIP141, and TIP142 series, which are NPN Darlington transistors, and have complementary PNP devices such as the TIP145, TIP146, and TIP147.

Key Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)100V
Collector Current (IC)10A
Base Current (IB)0.5A
Collector-Emitter Sustaining Voltage (VCEO(sus))100Vdc (Min)
DC Current Gain (hFE)1000 @ VCE = 4 V, IC = 5 A (Min)
Collector-Emitter Saturation Voltage (VCE(sat))2 V @ IC = 5 A, IB = 10 mA (Max)
Junction Temperature (TJ)150°C
Storage Temperature Range (TSTG)-65 to 150°C
Collector Dissipation (PC)80W @ TC = 25°C

Key Features

  • Monolithic construction with built-in base-emitter shunt resistors.
  • High DC current gain: hFE = 1000 at VCE = 4 V, IC = 5 A (Minimum).
  • Pb-free packages are available.
  • Complementary to TIP147T.

Applications

The TIP142TTU is suitable for various applications including general-purpose amplifiers and low-frequency switching circuits. It is commonly used in industrial settings where high current gain and robust collector-emitter sustaining voltage are required.

Q & A

  1. What is the maximum collector-emitter voltage of the TIP142TTU?
    The maximum collector-emitter voltage (VCEO) is 100 V.
  2. What is the maximum collector current of the TIP142TTU?
    The maximum collector current (IC) is 10 A.
  3. What is the typical DC current gain of the TIP142TTU?
    The typical DC current gain (hFE) is 1000 at VCE = 4 V, IC = 5 A.
  4. What is the collector-emitter saturation voltage of the TIP142TTU?
    The collector-emitter saturation voltage (VCE(sat)) is 2 V at IC = 5 A, IB = 10 mA.
  5. What is the junction temperature range of the TIP142TTU?
    The junction temperature (TJ) range is up to 150°C.
  6. Is the TIP142TTU suitable for life support systems?
    No, the TIP142TTU is not authorized for use as a critical component in life support devices or systems without express written approval from ON Semiconductor.
  7. What package types are available for the TIP142TTU?
    The TIP142TTU is available in TO-220 3L (Single Gauge) and other related packages.
  8. What is the storage temperature range for the TIP142TTU?
    The storage temperature range (TSTG) is -65 to 150°C.
  9. What is the collector dissipation of the TIP142TTU?
    The collector dissipation (PC) is 80 W at TC = 25°C.
  10. Are Pb-free packages available for the TIP142TTU?
    Yes, Pb-free packages are available for the TIP142TTU.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):10 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:3V @ 40mA, 10A
Current - Collector Cutoff (Max):2mA
DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 5A, 4V
Power - Max:80 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
0 Remaining View Similar

In Stock

-
391

Please send RFQ , we will respond immediately.

Similar Products

Part Number TIP142TTU TIP142TU TIP147TTU TIP142FTU
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete
Transistor Type NPN - Darlington NPN - Darlington PNP - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 10 A 10 A 10 A 10 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 10A 3V @ 40mA, 10A 3V @ 40mA, 10A 3V @ 40mA, 10A
Current - Collector Cutoff (Max) 2mA 2mA 2mA 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A, 4V 1000 @ 5A, 4V 1000 @ 5A, 4V 1000 @ 5A, 4V
Power - Max 80 W 80 W 80 W 125 W
Frequency - Transition - - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-3P-3 Full Pack
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-3PF

Related Product By Categories

BCV26
BCV26
onsemi
TRANS PNP DARL 30V 1.2A SOT23-3
BC846BWE6327
BC846BWE6327
Infineon Technologies
TRANS NPN 65V 0.1A SOT323
BC858B,235
BC858B,235
Nexperia USA Inc.
TRANS PNP 30V 0.1A TO236AB
TIP30C
TIP30C
NTE Electronics, Inc
TRANS PNP 100V 1A TO220
NSV1C301ET4G-VF01
NSV1C301ET4G-VF01
onsemi
TRANS NPN 100V 3A DPAK
BST52,135
BST52,135
Nexperia USA Inc.
TRANS NPN DARL 80V 1A SOT89
BLF278
BLF278
Ampleon USA Inc.
RF PFET, 2-ELEMENT, VERY HIGH FR
BC858B RFG
BC858B RFG
Taiwan Semiconductor Corporation
TRANS PNP 30V 0.1A SOT23
MMBT2222AT
MMBT2222AT
Fairchild Semiconductor
TRANS NPN 40V 0.6A SOT523F
MJE340STU
MJE340STU
onsemi
TRANS NPN 300V 0.5A TO126-3
MMBT3904T-7
MMBT3904T-7
Diodes Incorporated
TRANS NPN 40V 0.2A SOT523
BCV47E6393HTSA1
BCV47E6393HTSA1
Infineon Technologies
TRANS NPN DARL 60V 0.5A SOT23

Related Product By Brand

SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
NRVBD1035VCTLT4G
NRVBD1035VCTLT4G
onsemi
DIODE SCHOTTKY DPAK
MMSZ4690T1G
MMSZ4690T1G
onsemi
DIODE ZENER 5.6V 500MW SOD123
1SMB5918BT3G
1SMB5918BT3G
onsemi
DIODE ZENER 5.1V 3W SMB
FDS8935
FDS8935
onsemi
MOSFET 2P-CH 80V 2.1A 8SOIC
FDB024N08BL7
FDB024N08BL7
onsemi
MOSFET N-CH 80V 120A TO263-7
BMS3004-1EX
BMS3004-1EX
onsemi
MOSFET P-CH TO220-3
FDWS9508L_F085
FDWS9508L_F085
onsemi
MOSFET P-CH 40V 80A 8PQFN
MC33072DR2G
MC33072DR2G
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
MC74HC163ADR2G
MC74HC163ADR2G
onsemi
LOG CMOS COUNTER 4BIT SOIC16
MC74HC04AFL1
MC74HC04AFL1
onsemi
IC INVERTER 6CH 1-INP SOEIAJ-14
MC79L12ACPG
MC79L12ACPG
onsemi
IC REG LINEAR -12V 100MA TO92-3