Overview
The SZMMBZ12VALT1G is a dual monolithic silicon Zener diode produced by onsemi, designed for applications requiring transient overvoltage protection capability. These devices are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, and medical equipment. The dual junction common anode design allows for the protection of two separate lines using only one package, making them ideal for situations where board space is limited.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Working Peak Reverse Voltage (VRWM) | 12 | V |
| Breakdown Voltage (VBR) | 12 - 12.6 | V |
| Peak Power Dissipation @ 1.0 ms | 24 or 40 | W |
| Maximum Reverse Leakage Current (IR) | 200 nA | nA |
| Clamping Voltage @ Peak Pulse Current (VC) | 17 V | V |
| ESD Rating | Class 3B (> 16 kV) per Human Body Model | - |
| Package Type | SOT-23 (TO-236) | - |
| Thermal Resistance Junction-to-Ambient (RJA) | 556 °C/W (FR-5 Board), 417 °C/W (Alumina Substrate) | °C/W |
| Maximum Case Temperature for Soldering | 260°C for 10 seconds | °C |
Key Features
- SOT-23 package allows either two separate unidirectional configurations or a single bidirectional configuration.
- Standard Zener breakdown voltage range from 5.6 V to 33 V.
- Peak power dissipation of 24 or 40 Watts @ 1.0 ms (unidirectional).
- ESD rating exceeding 16 kV per the Human Body Model and IEC61000-4-2 Level 4, ±30 kV contact discharge.
- Low leakage current of less than 5.0 µA.
- Void-free, transfer-molded, thermosetting plastic case with corrosion-resistant finish.
- Package designed for optimal automated board assembly and high-density applications.
- Pb-free packages available.
- AEC-Q101 qualified and PPAP capable.
Applications
- Voltage regulation and waveform clipping.
- MOSFET gate protection.
- General usage in various end products.
- Protection in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, and medical equipment.
Q & A
- What is the primary function of the SZMMBZ12VALT1G Zener diode?
The primary function is to provide transient overvoltage protection capability in voltage and ESD sensitive equipment.
- What is the breakdown voltage range for the SZMMBZ12VALT1G?
The breakdown voltage range is from 12 V to 12.6 V.
- What is the peak power dissipation of the SZMMBZ12VALT1G?
The peak power dissipation is 24 or 40 Watts @ 1.0 ms (unidirectional).
- What is the ESD rating of the SZMMBZ12VALT1G?
The ESD rating exceeds 16 kV per the Human Body Model and IEC61000-4-2 Level 4, ±30 kV contact discharge.
- What package type is used for the SZMMBZ12VALT1G?
The package type is SOT-23 (TO-236).
- Is the SZMMBZ12VALT1G Pb-free?
- What are the typical applications for the SZMMBZ12VALT1G?
Typical applications include voltage regulation, waveform clipping, MOSFET gate protection, and general usage in various end products.
- Is the SZMMBZ12VALT1G AEC-Q101 qualified?
- What is the maximum case temperature for soldering the SZMMBZ12VALT1G?
The maximum case temperature for soldering is 260°C for 10 seconds.
- What is the thermal resistance junction-to-ambient for the SZMMBZ12VALT1G?
The thermal resistance junction-to-ambient is 556 °C/W (FR-5 Board) and 417 °C/W (Alumina Substrate).
