SURS8220T3G
  • Share:

onsemi SURS8220T3G

Manufacturer No:
SURS8220T3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 200V 2A SMB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SURS8220T3G is an ultrafast recovery rectifier produced by onsemi, designed for high voltage and high frequency rectification. This component is particularly suited for surface mount applications where compact size and weight are critical. It is ideal for use in power conversion circuits, reverse battery protection, gate driving circuits, and as protection and free-wheeling diodes. The SURS8220T3G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

Key Specifications

Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 200 V
Average Rectified Forward Current IF(AV) 2.0 @ TL = 145°C A
Non-Repetitive Peak Surge Current IFSM 40 A
Operating Junction Temperature Range TJ −65 to +175 °C
Maximum Instantaneous Forward Voltage (IF = 2.0 A, TJ = 25°C) vF 0.95 Volts
Maximum Instantaneous Forward Voltage (IF = 2.0 A, TJ = 150°C) vF 0.77 Volts
Maximum Reverse Recovery Time trr 35 ns (IF = 1.0 A, di/dt = 50 A/μs) ns
Maximum Forward Recovery Time tfr 25 ns (IF = 1.0 A, di/dt = 100 A/μs) ns
Thermal Resistance, Junction to Lead RθJL 13 °C/W
Thermal Resistance, Junction to Ambient RθJA 66 °C/W
Case Epoxy, Molded
Weight 95 mg (approximately)
Finish All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes 260°C Max. for 10 Seconds
Shipping Shipped in 12 mm Tape and Reel, 2500 units per reel
Polarity Polarity Band Indicates Cathode Lead
Marking U2D

Key Features

  • Small Compact Surface Mountable Package with J-Bend Leads
  • Rectangular Package for Automated Handling
  • High Temperature Glass Passivated Junction
  • Low Forward Voltage Drop (0.77 Volts Max @ 2.0 A, TJ = 150°C)
  • NRVUS and SURS8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
  • AEC-Q101 Qualified and PPAP Capable
  • Pb-Free and RoHS Compliant
  • ESD Ratings: Human Body Model = 3B (> 8 kV), Machine Model > 1000 V

Applications

  • Power Conversion Circuits
  • Reverse Battery Protection
  • Gate Driving Circuits
  • Protection and Free-Wheeling Diodes
  • General Converters
  • Lighting
  • Gasoline Direct Injection

Q & A

  1. What is the peak repetitive reverse voltage of the SURS8220T3G?

    The peak repetitive reverse voltage (VRRM) is 200 V.

  2. What is the average rectified forward current of the SURS8220T3G?

    The average rectified forward current (IF(AV)) is 2.0 A at TL = 145°C.

  3. What is the maximum instantaneous forward voltage at 2.0 A and TJ = 150°C?

    The maximum instantaneous forward voltage (vF) is 0.77 Volts at 2.0 A and TJ = 150°C.

  4. What is the maximum reverse recovery time of the SURS8220T3G?

    The maximum reverse recovery time (trr) is 35 ns (IF = 1.0 A, di/dt = 50 A/μs).

  5. Is the SURS8220T3G AEC-Q101 qualified?

    Yes, the SURS8220T3G is AEC-Q101 qualified and PPAP capable.

  6. What is the thermal resistance, junction to lead, of the SURS8220T3G?

    The thermal resistance, junction to lead (RθJL), is 13 °C/W.

  7. How is the SURS8220T3G packaged and shipped?

    The SURS8220T3G is shipped in 12 mm tape and reel, with 2500 units per reel.

  8. What are the ESD ratings for the SURS8220T3G?

    The ESD ratings are Human Body Model = 3B (> 8 kV) and Machine Model > 1000 V.

  9. Is the SURS8220T3G Pb-Free and RoHS compliant?

    Yes, the SURS8220T3G is Pb-Free and RoHS compliant.

  10. What is the operating junction temperature range of the SURS8220T3G?

    The operating junction temperature range (TJ) is −65 to +175 °C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):200 V
Current - Average Rectified (Io):2A
Voltage - Forward (Vf) (Max) @ If:950 mV @ 2 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):35 ns
Current - Reverse Leakage @ Vr:2 µA @ 200 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AA, SMB
Supplier Device Package:SMB
Operating Temperature - Junction:-65°C ~ 175°C
0 Remaining View Similar

In Stock

-
32

Please send RFQ , we will respond immediately.

Same Series
NRVUS220VT3G
NRVUS220VT3G
DIODE GEN PURP 200V 2A SMB
SURS8220T3G
SURS8220T3G
DIODE GEN PURP 200V 2A SMB
SURS8220T3G-IR01
SURS8220T3G-IR01
DIODE GP ULT FAST 200V 2A SMB

Similar Products

Part Number SURS8220T3G SURS8260T3G SURS8320T3G SURA8220T3G SURS8120T3G SURS8210T3G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 200 V 600 V 200 V 200 V 200 V 100 V
Current - Average Rectified (Io) 2A 2A 3A 2A 1A 2A
Voltage - Forward (Vf) (Max) @ If 950 mV @ 2 A 1.45 V @ 2 A 875 mV @ 3 A 950 mV @ 2 A 875 mV @ 1 A 940 mV @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 35 ns 75 ns 35 ns 35 ns 35 ns 30 ns
Current - Reverse Leakage @ Vr 2 µA @ 200 V 5 µA @ 600 V 5 µA @ 200 V 2 µA @ 200 V 2 µA @ 200 V 2 µA @ 50 V
Capacitance @ Vr, F - - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AA, SMB DO-214AA, SMB DO-214AB, SMC DO-214AC, SMA DO-214AA, SMB DO-214AA, SMB
Supplier Device Package SMB SMB SMC SMA SMB SMB
Operating Temperature - Junction -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -65°C ~ 175°C -60°C ~ 175°C

Related Product By Categories

NRVB130T1G
NRVB130T1G
onsemi
DIODE SCHOTTKY 30V 1A SOD123
BAS521-7
BAS521-7
Diodes Incorporated
DIODE GEN PURP 300V 250MA SOD523
PMEG2010ER,115
PMEG2010ER,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A CFP3
MBRA120ET3G
MBRA120ET3G
onsemi
DIODE SCHOTTKY 20V 1A SMA
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
BAT54W-E3-18
BAT54W-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 200MA SOD123
1N4004GH
1N4004GH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO204AL
BAT54-D87Z
BAT54-D87Z
onsemi
30V SOT23 SCHOTTKY DIODE
BAS16_L99Z
BAS16_L99Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
STTH30L06G
STTH30L06G
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
BYC10X-600PQ
BYC10X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 10A TO220F
RB751S-40GJTE61
RB751S-40GJTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD

Related Product By Brand

1N5353BRLG
1N5353BRLG
onsemi
DIODE ZENER 16V 5W AXIAL
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
NCV2820MUTBG
NCV2820MUTBG
onsemi
IC AMP CLASS D MONO 8UDFN
NCV2904VDR2G
NCV2904VDR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
MC74HC138ADT
MC74HC138ADT
onsemi
DECODER/DRIVER, HC/UH SERIES
NCS29001DR2G
NCS29001DR2G
onsemi
IC LED DRIVER CTRLR PWM 14SOIC
LB11861MC-AH
LB11861MC-AH
onsemi
IC MOTOR DRIVER 4.5V-16V 10MFPSK
NCP45495XMNTWG
NCP45495XMNTWG
onsemi
L MANGO
NCP432BISNT1G
NCP432BISNT1G
onsemi
IC VREF SHUNT ADJ 0.5% SOT23-3
NCV551SN50T1G
NCV551SN50T1G
onsemi
IC REG LINEAR 5V 150MA 5TSOP
MC79L15ABPG
MC79L15ABPG
onsemi
IC REG LINEAR -15V 100MA TO92-3
MC78M05BDTT5G
MC78M05BDTT5G
onsemi
IC REG LINEAR 5V 500MA DPAK