Overview
The SS26T3G is a surface mount Schottky power rectifier produced by onsemi. This device employs the Schottky Barrier principle in a metal-to-silicon power rectifier, making it ideal for low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. The SS26T3G features an epitaxial construction with oxide passivation and metal overlay contact, ensuring high stability and reliability.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Peak Repetitive Reverse Voltage | VRRM | 60 | V |
| Average Rectified Forward Current (At Rated VR, TL = 95°C) | IO | 2.0 | A |
| Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) | IFSM | 40 | A |
| Storage/Operating Case Temperature | Tstg, TC | −55 to +150 | °C |
| Operating Junction Temperature | TJ | −55 to +150 | °C |
| Voltage Rate of Change (Rated VR, TJ = 25°C) | dv/dt | 10,000 | V/μs |
| Maximum Instantaneous Forward Voltage (iF = 1.0 A, TJ = 25°C) | vF | 0.51 | V |
| Thermal Resistance − Junction-to-Lead | RθJL | 24 | °C/W |
| Thermal Resistance − Junction-to-Ambient | RθJA | 80 | °C/W |
Key Features
- Compact Package with J-Bend Leads Ideal for Automated Handling
- Highly Stable Oxide Passivated Junction
- Guardring for Overvoltage Protection
- Low Forward Voltage Drop
- NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- Pb-Free Package Available
- Case: Molded Epoxy, Epoxy Meets UL 94, V-O at 0.125 in
- Weight: 95 mg (approximately)
- Cathode Polarity Band
- Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
- Available in 12 mm Tape, 2500 Units per 13″ Reel, Add “T3” Suffix to Part Number
- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
- ESD Ratings: Human Body Model = 3B Machine Model = C
Applications
The SS26T3G is ideally suited for various applications including:
- Low voltage, high frequency switching power supplies
- Free wheeling diodes
- Polarity protection diodes
- Automotive and other applications requiring unique site and control change requirements
Q & A
- What is the peak repetitive reverse voltage of the SS26T3G?
The peak repetitive reverse voltage (VRRM) is 60 V. - What is the average rectified forward current of the SS26T3G at rated VR and TL = 95°C?
The average rectified forward current (IO) is 2.0 A. - What is the non-repetitive peak surge current of the SS26T3G?
The non-repetitive peak surge current (IFSM) is 40 A. - What are the storage and operating case temperatures for the SS26T3G?
The storage and operating case temperatures (Tstg, TC) range from −55 to +150°C. - What is the operating junction temperature range for the SS26T3G?
The operating junction temperature (TJ) range is from −55 to +150°C. - What is the voltage rate of change for the SS26T3G at rated VR and TJ = 25°C?
The voltage rate of change (dv/dt) is 10,000 V/μs. - What is the maximum instantaneous forward voltage of the SS26T3G at iF = 1.0 A and TJ = 25°C?
The maximum instantaneous forward voltage (vF) is 0.51 V. - Is the SS26T3G Pb-free?
Yes, the SS26T3G is available in a Pb-free package. - What are the ESD ratings for the SS26T3G?
The ESD ratings are Human Body Model = 3B and Machine Model = C. - What are some typical applications of the SS26T3G?
The SS26T3G is typically used in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes.
